74HC4051D,74HC4052D
1
CMOS Digital Integrated Circuits Silicon Monolithic
74HC4051D,74HC4052D
Start of commercial production
2016-04
1. Functional Description
74HC4051D:8-Channel Analog Multiplexer/Demultiplexer
74HC4052D:Dual 4-Channel Analog Multiplexer/Demultiplexer
2. General
The 74HC4051D, 74HC4052D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated
with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while
maintaining the CMOS low power dissipation.
The 74HC4051D has an 8 channel configuration and the 74HC4052D has a 4 channel × 2 configuration.
The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude
signal (VCC - VEE) can then be switched by the small logical amplitude (VCC - GND) control signal.
For example, in the case of VCC = 5 V, GND = 0 V, VEE = -5 V, signals between -5 V and +5 V can be switched
from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be
connected to circuits with low input impedance.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)
(2) Low power dissipation: ICC = 4.0 µA (max) (VCC = 6.0 V, VEE = GND, Ta = 25 )
(3) Low ON-resistance: RON = 50 Ω (typ.) at VCC - VEE = 9 V
(4) High degree of linearity: THD = 0.02 % (typ.) at VCC - VEE = 9 V
Note 1: Operating Range spec of Topr = -40 to 125 is applicable only for the products which manufactured after
July 2020.
4. Packaging
SOIC16
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
2
5. Pin Assignment
74HC4051D 74HC4052D
6. IEC Logic Symbol
74HC4051D 74HC4052D
7. Marking
74HC4051D 74HC4052D
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
3
8. System Diagram
74HC4051D
74HC4052D
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
4
9. Truth Table
Input
Inhibit
L
L
L
L
L
L
L
L
H
Input
C*
L
L
L
L
H
H
H
H
X
Input
B
L
L
H
H
L
L
H
H
X
Input
A
L
H
L
H
L
H
L
H
X
ON Channel
74HC4051D
0
1
2
3
4
5
6
7
None
ON Channel
74HC4052D
0X, 0Y
1X, 1Y
2X, 2Y
3X, 3Y
None
X: Don't care
*: Except 74HC4052D
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Supply voltage
Supply voltage
Input voltage
Switch I/O voltage
Input diode current
I/O diode current
Switch through current
VCC/ground current
Power dissipation
Storage temperature
Symbol
VCC
VEE
VCC-VEE
VIN
VI/O
IIK
II/OK
IT
ICC
PD
Tstg
Note
(Note 1)
Rating
-0.5 to 7.0
-7.0 to 0
-0.5 to 13.0
-0.5 to VCC + 0.5
VEE - 0.5 to VCC + 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
V
V
mA
mA
mA
mA
mW
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: PD derates linearly with -8 mW/ above 85 .
11. Operating Ranges (Note)
Characteristics
Supply voltage
Supply voltage
Supply voltage
Input voltage
Switch I/O voltage
Operating temperature
Input rise and fall times
Symbol
VCC
VEE
VCC-VEE
VIN
VI/O
Topr
tr,tf
Note
(Note 1)
Rating
2.0 to 6.0
-6.0 to 0
2.0 to 12.0
0 to VCC
VEE to VCC
-40 to 125
0 to 50
Unit
V
V
V
V
V
µs
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: Operating Range spec of Topr = -40 to 125 is applicable only for the products which manufactured after
July 2020.
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
5
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
High-level input voltage
Low-level input voltage
ON-resistance
Difference of ON-resistance
between switches
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON)
Control input leakage current
Quiescent supply current
Symbol
VIH
VIL
RON
∆RON
IOFF
II/O
IIN
ICC
Test Condition
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VEE
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VCC
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
VOS = VCC or GND
VIS = GND or VCC
VIN = VIH or VIL
VOS = VCC or GND
VIN = VIH or VIL
VIN = VCC or GND
VIN = VCC or GND
VEE (V)
GND
-4.5
-6.0
GND
GND
-4.5
-6.0
GND
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
-6.0
GND
-6.0
GND
GND
-6.0
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
4.5
4.5
6.0
2.0
4.5
4.5
6.0
2.0
4.5
4.5
6.0
4.5
4.5
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
Typ.
180
140
135
210
150
130
125
220
95
75
70
10
5
5
Max
0.50
1.35
1.80
240
190
180
200
170
170
130
100
100
30
12
10
±0.06
±0.1
±0.06
±0.1
±0.1
4.0
8.0
Unit
V
V
Ω
Ω
µA
µA
µA
µA
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
6
12.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
High-level input voltage
Low-level input voltage
ON-resistance
Difference of ON-resistance
between switches
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON)
Control input leakage current
Quiescent supply current
Symbol
VIH
VIL
RON
∆RON
IOFF
II/O
IIN
ICC
Test Condition
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VEE
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VCC
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
VOS = VCC or GND
VIS = GND or VCC
VIN = VIH or VIL
VOS = VCC or GND
VIN = VIH or VIL
VIN = VCC or GND
VIN = VCC or GND
VEE (V)
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
-6.0
GND
-6.0
GND
GND
-6.0
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
4.5
4.5
6.0
4.5
4.5
6.0
4.5
4.5
6.0
4.5
4.5
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
Max
0.50
1.35
1.80
300
240
225
250
215
215
165
125
125
35
15
12
±0.6
±1.0
±0.6
±1.0
±1.0
40.0
80.0
Unit
V
V
Ω
Ω
µA
µA
µA
µA
µA
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
7
12.3. DC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 125 )
Characteristics
High-level input voltage
Low-level input voltage
ON-resistance
Difference of ON-resistance
between switches
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON)
Control input leakage current
Quiescent supply current
Symbol
VIH
VIL
RON
∆RON
IOFF
II/O
IIN
ICC
Test Condition
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VEE
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VCC
II/O ≤ 2 mA
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
VOS = VCC or GND
VIS = GND or VCC
VIN = VIL
VOS = VCC or GND
VIN = VIH or VIL
VIN = VCC or GND
VIN = VCC or GND
VEE (V)
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
-6.0
GND
-6.0
GND
GND
-6.0
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
4.5
4.5
6.0
4.5
4.5
6.0
4.5
4.5
6.0
4.5
4.5
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
Max
0.50
1.35
1.80
340
275
255
285
245
245
190
145
145
35
15
12
±3.0
±5.0
±3.0
±5.0
±1.0
80.0
160.0
Unit
V
V
Ω
Ω
µA
µA
µA
µA
Note: Operating Range spec of Topr = -40 to 125 is applicable only for the products which manufactured after
July 2020.
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
8
12.4. AC Characteristics
(Unless otherwise specified, CL = 50 pF, Ta = 25 , Input: tr = tf = 6 ns)
Characteristics
Phase difference
between input to output
Output enable time
Output disable time
Control input
capacitance
Common terminal
capacitance
Switch terminal
capacitance
Feedthrough
capacitance
Power dissipation
capacitance
Part Number
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
Symbol
φI/O
tPZL,tPZH
tPLZ,tPHZ
CIN
CIS
COS
CIOS
CPD
Test Condition
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
Figure 2
Figure 2
Figure 2
Figure 2
(Note 1)
VEE (V)
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
-5.0
-5.0
-5.0
-5.0
VCC (V)
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
5.0
5.0
5.0
5.0
Min
Typ.
18
7
6
5
90
30
25
24
90
30
25
24
56
26
25
24
56
26
25
24
5
36
19
7
7
0.95
0.85
11
19
Max
25
12
10
8
145
45
35
34
145
45
35
34
85
35
33
32
85
35
33
32
10
70
40
15
15
2
2
Unit
ns
ns
ns
pF
pF
pF
pF
pF
Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
ICC(opr) = CPD × VCC × fIN + ICC
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
9
12.5. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = -40 to 85 ,
Input: tr = tf = 6 ns)
Characteristics
Phase difference between
input to output
Output enable time
Output disable time
Control input capacitance
Common terminal
capacitance
Switch terminal capacitance
Feedthrough capacitance
Part Number
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
Symbol
φI/O
tPZL,tPZH
tPLZ,tPHZ
CIN
CIS
COS
CIOS
Test Condition
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
Figure 2
Figure 2
Figure 2
VEE (V)
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
-5.0
-5.0
-5.0
VCC (V)
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
5.0
5.0
5.0
Min
Max
30
15
13
10
150
55
42
41
150
55
42
41
90
45
40
39
90
45
40
39
10
70
40
15
15
2
2
Unit
ns
ns
ns
pF
pF
pF
pF
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
10
12.6. AC Characteristics (Note)
(Unless otherwise specified, CL = 50 pF, Ta = -40 to 125 , Input: tr = tf = 6 ns)
Characteristics
Phase difference between
input to output
Output enable time
Output disable time
Control input capacitance
Common terminal
capacitance
Switch terminal capacitance
Feedthrough capacitance
Part Number
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
Symbol
φI/O
tPZL,tPZH
tPLZ,tPHZ
CIN
CIS
COS
COS
CIOS
Test Condition
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
RL = 1 kΩ
Figure 1
Figure 2
Figure 2
Figure 2
VEE (V)
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
GND
GND
GND
-4.5
-5.0
-5.0
-5.0
-5.0
-5.0
-5.0
VCC (V)
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
2.0
4.5
6.0
4.5
5.0
5.0
5.0
5.0
5.0
5.0
Min
Max
35
17
15
12
155
62
47
46
155
62
47
46
95
52
45
44
95
52
45
44
10
70
40
15
15
2
2
Unit
ns
ns
ns
pF
pF
pF
pF
Note: Operating Range spec of Topr = -40 to 125 is applicable only for the products which manufactured after
July 2020.
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
11
12.7. Analog Switch Characteristics (Ta = 25 ) (Note)
Characteristics
Sine Wave Distortion
Maximum frequency
response
Feed through
attenuation (switch OFF)
Crosstalk (control input
to signal output)
Crosstalk (between any
switches)
Part Number
74HC4051D
74HC4052D
74HC4051D
74HC4052D
74HC4051D
74HC4052D
Symbol
THD
fMAX(I/O)
FTH
Xtalk
Xtalk
Test Condition
RL = 10 kΩ, CL = 50 pF
fIN = 1 kHz
Adjust fIN voltage to obtain
0 dBm at VOS
Increase fIN frequency until
dB meter reads -3 dB
RL = 50 Ω, CL = 10 pF
fIN = 1 MHz, sine wave
Figure 3
VIN is centered at (VCC/2).
Adjust input for 0 dBm.
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz, sine wave
Figure 4
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz,
square wave (tr = tf = 6 ns)
Figure 5
Adjust VIN to obtain 0 dBm
at input.
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz, sine wave
Figure 6
VIN = 4.0 Vp-p
VIN = 8.0 Vp-p
VIN = 11.0 Vp-p
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
VEE (V)
-2.25
-4.5
-6.0
-2.25
-4.5
-6.0
-2.25
-4.5
-6.0
-2.25
-4.5
-6.0
-2.25
-4.5
-6.0
VCC (V)
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
Typ.
0.025
0.020
0.018
120
45
70
190
70
110
200
85
140
-50
-50
-50
60
140
200
-50
-50
-50
Unit
%
MHz
dB
mV
dB
Note: These characteristics are determined by design of devices.
Note 1: Input COMMON terminal, and measured at SWITCH terminal.
Note 2: Input SWITCH terminal, and measured at COMMON terminal.
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
12
13. AC Test Circuit
Figure 1 tPLZ, tPHZ, tPZL, tPZH
Figure 2 CIOS, CIS, COS
Figure 3 Frequency Response
Figure 4 Feedthrough Attenuation
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
13
Figure 5 Cross Talk (control input to output signal)
Figure 6 Cross Talk (between any two switches)
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
14
Package Dimensions
Unit: mm
Weight: 0.15 g (typ.)
Package Name(s)
Nickname: SOIC16
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
74HC4051D,74HC4052D
15
https://toshiba.semicon-storage.com/
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any
intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
•ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,
INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS,
INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS
OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE,
USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR
A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2020-12-03
Rev.5.0
©2016-2020
Toshiba Electronic Devices & Storage Corporation
