AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations.The soft copackaged diode is targeted for minimal losses in Welding machines, Solar Inverter and UPS applications. VCE IC (TC=100C) 600V 20A VCE(sat) (TC=25C) 1.85V Top View C TO-247 G C AOK20B60D1 E E G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE AOK20B60D1 600 Units V Gate-Emitter Voltage V GE 20 V VGE Spike VSPIKE 24 V 500ns T Continuous Collector C=25C TC=100C Current 40 IC 20 Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE 600V, Limited by TJmax I LM Continuous Diode Forward Current TC=25C TC=100C Diode Pulsed Current, Limited by TJmax 74 A 74 A 20 IF A 10 A I FM 74 A Short circuit withstanding time VGE = 15V, VCE t SC 400V, Delay between short circuits 1.0s, TC=25C 10 s TC=25C Power Dissipation TC=100C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.6.0: May 2014 PD T J , T STG TL Symbol R JA R JC R JC www.aosmd.com 167 83 W -55 to 175 C 300 C AOK20B60D1 40 0.9 Units C/W C/W 1.7 C/W Page 1 of 9 AOK20B60D1 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES Min IC=1mA, VGE=0V, TJ=25C VGE=15V, IC=20A Collector-Emitter Saturation Voltage VGE=0V, IC=10A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Max Units V 600 - - TJ=25C - 1.85 2.4 TJ=125C - 2.2 - TJ=175C - 2.37 - TJ=25C - 1.35 1.85 TJ=125C - 1.33 - TJ=175C - 1.26 - - 5.7 - TJ=25C - - 10 TJ=125C - - 300 TJ=175C - - 3000 VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ V V V A I GES Gate-Emitter leakage current VCE=0V, VGE=20V - - 100 nA g FS Forward Transconductance VCE=20V, IC=20A - 7 - S - 984 - pF - 93 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 3.75 - pF Qg Total Gate Charge - 24.6 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=20A - 9.8 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=25 I C(SC) short circuits 1.0s Rg Gate resistance f=1MHz SWITCHING PARAMETERS, (Load Inductive, TJ=25C) - 8.2 - nC - 74 - A - 2.5 - t D(on) Turn-On DelayTime - 20 - ns tr Turn-On Rise Time - 37 - ns t D(off) Turn-Off Delay Time - 66 - ns tf Turn-Off Fall Time - 8 - ns Q gc TJ=25C VGE=15V, VCE=400V, IC=20A, RG=15, Parasitic nductance=150nH E on Turn-On Energy - 0.76 - mJ E off Turn-Off Energy - 0.18 - mJ E total t rr Total Switching Energy - 0.94 - mJ Diode Reverse Recovery Time - 107 - Q rr Diode Reverse Recovery Charge - 0.43 - ns C Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175C) - 6.5 - A t D(on) Turn-On DelayTime - 18 - ns tr Turn-On Rise Time - 27 - ns t D(off) Turn-Off Delay Time - 93 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.83 - mJ E off Turn-Off Energy - 0.36 - mJ E total t rr Total Switching Energy - 1.2 - mJ Diode Reverse Recovery Time - 188 - Q rr Diode Reverse Recovery Charge - 0.94 - ns C I rm Diode Peak Reverse Recovery Current - 9.8 - A TJ=25C IF=10A,dI/dt=200A/s,VCE=400V I rm TJ=175C VGE=15V, VCE=400V, IC=20A, RG=15, Parasitic Inductance=150nH TJ=175C IF=10A,dI/dt=200A/s,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: May 2014 www.aosmd.com Page 2 of 9 AOK20B60D1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 20V 20V 70 17V 80 17V 60 15V 60 IC (A) IC (A) 15V 13V 40 50 13V 40 30 11V 20 9V 11V 20 VGE= 7V 9V 10 0 VGE=7V 0 0 1 2 3 4 5 6 7 0 1 VCE(V) Fig 1: Output Characteristic (Tj=25C ) 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=175C ) 70 50 -40C VCE=20V 60 -40C 25C 40 175C 40 30 IF (A) IC (A) 50 30 25C 20 20 10 10 0 175C 0 4 7 10 13 16 0.0 0.5 VGE(V) Fig 3: Transfer Characteristic 1.0 1.5 2.0 2.5 3.0 VF (V) Fig 4: Diode Characteristic 8 5 IC=40A 7 3 VGE(TH)(V) VCE(sat) (V) 4 IC=20A 2 6 5 4 1 IC=10A 3 0 2 0 25 50 75 100 125 150 175 Temperature (C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.6.0: May 2014 www.aosmd.com 0 25 50 75 100 125 TJ (C) Figure 6: VGE(TH) vs. Tj 150 175 Page 3 of 9 AOK20B60D1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=20A 12 Cies 9 Capacitance (pF) VGE (V) 1000 6 3 Coes 100 10 0 Cres 1 0 5 10 15 20 25 30 0 Qg(nC) Fig 7: Gate-Charge Characteristics 5 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic 180 150 Power Disspation (W) 120 90 60 30 0 25 50 75 100 125 150 175 TCASE(C) Fig 10: Power Disspation as a Function of Case 40 35 Current rating IC(A) 30 25 20 15 10 5 0 25 50 75 100 125 150 175 TCASE(C) Fig 11: Current De-rating Rev.6.0: May 2014 www.aosmd.com Page 4 of 9 AOK20B60D1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 10 Tr 100 10 1 1 0 10 20 30 40 IC (A) Figure 12: Switching Time vs. IC (Tj=175C,VGE=15V,VCE=400V,Rg=15 ) 1000 Switching Time (nS) Td(on) 1000 50 0 40 80 120 Rg ( ) Figure 13: Switching Time vs. Rg (Tj=175C,VGE=15V,VCE=400V,IC=20A) 160 Td(off) Tf Td(on) Tr 100 10 1 0 50 100 150 TJ (C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=20A,Rg=15 ) Rev.6.0: May 2014 200 www.aosmd.com Page 5 of 9 AOK20B60D1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 3 Eoff Eoff Eon Eon Switching Energy (mJ) SwitchIng Energy (mJ) 4 Etotal 2 1 Etotal 2 1 0 0 0 10 20 30 40 IC (A) Figure 15: Switching Loss vs. IC (Tj=175C,VGE=15V,VCE=400V,Rg=15 ) 50 0 2 50 100 150 Rg ( ) Figure 16: Switching Loss vs. Rg (Tj=175C,VGE=15V,VCE=400V,IC=20A) 2 Eoff Eoff Eon 1.5 Eon 1.6 Etotal Switching Energ y (mJ) Switching Energy (mJ) 200 1 0.5 Etotal 1.2 0.8 0.4 0 0 0 100 150 TJ (C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=20A,Rg=15 ) Rev.6.0: May 2014 50 200 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=175C,VGE=15V,IC=20A,Rg=15 ) 500 Page 6 of 9 AOK20B60D1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2 1.E-04 1.6 20A VCE=600V VSD (V) ICE(S) (A) 1.E-05 1.E-06 1.2 10A 13V 5A 0.8 1.E-07 VCE=400V IF=1A 0.4 1.E-08 1.E-09 0 0 50 100 150 200 0 50 100 150 Temperature (C ) Fig 20: Diode Forward voltage vs. Junction Temperature Temperature (C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature 1400 70 175C 1200 200 250 10 175C 60 200 8 50 Trr Qrr 600 30 400 100 Irm 25C 175C 10 0 5 0 10 15 20 25 IS (A) Fig 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/ s) 10 250 70 175C 25C 0 0 1400 2 S 5 10 15 20 25 0 IF(A) Fig 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/ s) 1200 4 25C 50 175C 0 6 20 25C 200 150 S 40 Trr (nS) 800 Irm(A) Qrr (nC) 1000 60 200 8 175C Qrr 600 40 30 25C 400 175C 25C 0 300 400 500 600 700 800 900 di/dt (A/ S) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=10A) Rev.6.0: May 2014 175C 10 0 200 4 50 25C 0 100 Trr 100 20 Irm 200 6 150 S 25C 2 S 800 Trr (nS) 50 Irm(A) Qrr (nC) 1000 www.aosmd.com 100 200 300 0 400 500 600 700 800 900 di/dt (A/ S) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=10A) Page 7 of 9 AOK20B60D1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=0.9C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT Z JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.7C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.6.0: May 2014 www.aosmd.com Page 8 of 9 AOK20B60D1 Rev.6.0: May 2014 www.aosmd.com Page 9 of 9