AOK20B60D1
600V, 20A Alpha IGBT
TM
with Diode
General Description Product Summary
V
CE
I
C
(T
C
=100°C) 20A
V
CE(sat)
(T
C
=25°C) 1.85V
Symbol
The Alpha IGBT
TM
line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations.The soft co-
packaged diode is targeted for minimal losses in Welding
machines, Solar Inverter and UPS applications.
Units
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOK20B60D1
600V
G
C
E
Top View
AOK20B60D1
TO-247
G
CE
Symbol
V
CE
V
GE
V
GE
Spike V
SPIKE
I
CM
I
LM
Diode Pulsed Current, Limited by T
Jmax
I
FM
t
SC
T
J
, T
STG
T
L
Symbol
R
θ
R
θ
JC
R
θ
JC
Continuous Diode
Forward Current
T
C
=25°C I
F
20 A
T
C
=100°C
Continuous Collector
Current
T
C
=25°C
10
40
20
I
C
Turn off SOA, V
CE
≤ 600V, Limited by T
Jmax
Pulsed Collector Current, Limited by T
Jmax
Gate-Emitter Voltage
T
C
=100°C
W
Units
A
A
Parameter
±20 V
74 A
A
500ns 24 V
74
°C/W40
83
°C
74
AOK20B60D1
Maximum Junction-to-Ambient
10 µs
T
C
=100°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds °C
Power Dissipation P
D
Short circuit withstanding time V
GE
= 15V, V
CE
≤
400V, Delay between short circuits ≥ 1.0s,
T
C
=25°C
Junction and Storage Temperature Range
T
C
=25°C
Thermal Characteristics
300
-55 to 175
167
V
Units
Parameter
AOK20B60D1
Collector-Emitter Voltage 600
°C/W1.7
Maximum Diode Junction-to-Case
°C/W0.9Maximum IGBT Junction-to-Case
G
C
E
Top View
AOK20B60D1
TO-247
G
CE
Rev.6.0: May 2014 www.aosmd.com Page 1 of 9
AOK20B60D1
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 600 - - V
T
J
=25°C - 1.85 2.4
T
J
=125°C - 2.2 -
T
J
=175°C - 2.37 -
T
J
=25°C - 1.35 1.85
T
J
=125°C - 1.33 -
T
J
=175°C - 1.26 -
V
GE(th)
Gate-Emitter Threshold Voltage - 5.7 - V
T
J
=25°C - - 10
T
J
=125°C - - 300
T
J
=175°C - - 3000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 7 - S
C
ies
- 984 - pF
C
oes
- 93 - pF
C
res
- 3.75 - pF
Q
g
- 24.6 - nC
Q
ge
- 9.8 - nC
Q
gc
- 8.2 - nC
I
C(SC)
- 74 - A
R
g
- 2.5 - Ω
t
D(on)
- 20 - ns
t
r
-
37
-
ns
Turn-On Rise Time
Turn-On DelayTime
T
J
=25°C
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CE
=480V, I
C
=20A
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°C)
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits ≥ 1.0s
V
GE
=15V, V
CE
=400V, R
G
=25Ω
Total Gate Charge
Gate resistance f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CE
=25V, f=1MHz
V
CE
=20V, I
C
=20A
V
CE
=0V, V
GE
=±20V
Forward Transconductance
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=20A V
V
CE
=600V, V
GE
=0V
V
GE
=0V, I
C
=10A V
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=5V, I
C
=1mA
t
r
-
37
-
ns
t
D(off)
- 66 - ns
t
f
- 8 - ns
E
on
- 0.76 - mJ
E
off
- 0.18 - mJ
E
total
- 0.94 - mJ
t
rr
- 107 - ns
Q
rr
- 0.43 - µC
I
rm
- 6.5 - A
t
D(on)
- 18 - ns
t
r
- 27 - ns
t
D(off)
- 93 - ns
t
f
- 14 - ns
E
on
- 0.83 - mJ
E
off
- 0.36 - mJ
E
total
- 1.2 - mJ
t
rr
- 188 - ns
Q
rr
- 0.94 - µC
I
rm
- 9.8 - A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
J
=175°C
I
F
=10A,dI/dt=200A/µs,V
CE
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=175°C
V
GE
=15V, V
CE
=400V, I
C
=20A,
R
G
=15Ω,
Parasitic Inductance=150nH
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Turn-Off Energy
Turn-On Rise Time
SWITCHING PARAMETERS, (Load Inductive, T
J
=175°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=10A,dI/dt=200A/µs,V
CE
=400V
Turn-Off Delay Time
T
J
=25°C
V
GE
=15V, V
CE
=400V, I
C
=20A,
R
G
=15Ω,
Parasitic Ιnductance=150nH
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
Rev.6.0: May 2014 www.aosmd.com Page 2 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IF(A)
V
F
(V)
Fig
4
: Diode Characteristic
25°C
175°C
-40°C
0
20
40
60
80
100
01234567
IC(A)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
9V
20V
17
V
15V
11V
VGE= 7V
13V
0
10
20
30
40
50
60
70
4 7 10 13 16
IC (A)
VGE(V)
Fig
3
: Transfer Characteristic
175°C
25°C
-40°C
VCE=20V
0
10
20
30
40
50
60
70
80
01234567
IC(A)
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
V
GE
=7V
9V
20V
17V
15V
11V
13V
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IF(A)
VF(V)
Fig 4: Diode Characteristic
25°C
175°C
-40°C
0
20
40
60
80
100
01234567
IC(A)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
9V
20V
17
V
15V
11V
VGE= 7V
13V
0
10
20
30
40
50
60
70
4 7 10 13 16
IC (A)
VGE(V)
Fig 3: Transfer Characteristic
175°C
25°C
-40°C
0
1
2
3
4
5
0 25 50 75 100 125 150 175
VCE(sat)
(V)
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
IC=40A
IC=10A
IC=20A
VCE=20V
0
10
20
30
40
50
60
70
80
01234567
IC(A)
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
V
GE
=7V
9V
20V
17V
15V
11V
13V
2
3
4
5
6
7
8
0 25 50 75 100 125 150 175
VGE(TH)(V)
TJ(°C)
Figure 6: VGE(TH) vs. Tj
Rev.6.0: May 2014 www.aosmd.com Page 3 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 5 10 15 20 25 30
VGE (V)
Qg(nC)
Fig 7: Gate-Charge Characteristics
VCE=480V
IC=20A
0
30
60
90
120
150
180
25 50 75 100 125 150 175
Power Disspation
(W)
TCASE(°C)
Fig
10
: Power Disspation as a Function of Case
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Capacitance (pF)
VCE(V)
Fig 8: Capacitance Characteristic
Cies
Cres
Coes
0
3
6
9
12
15
0 5 10 15 20 25 30
VGE (V)
Qg(nC)
Fig 7: Gate-Charge Characteristics
VCE=480V
IC=20A
0
30
60
90
120
150
180
25 50 75 100 125 150 175
Power Disspation
(W)
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Capacitance (pF)
VCE(V)
Fig 8: Capacitance Characteristic
Cies
Cres
Coes
0
5
10
15
20
25
30
35
40
25 50 75 100 125 150 175
Current rating IC
(A)
TCASE(°C)
Fig 11: Current De-rating
Rev.6.0: May 2014 www.aosmd.com Page 4 of 9
AOK20B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
10000
0 10 20 30 40 50
Switching Time (nS)
IC (A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=15Ω
ΩΩ
Ω)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 40 80 120 160
Switching Time (nS)
Rg(Ω
ΩΩ
Ω)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=20A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
Switching Time (nS)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 10 20 30 40 50
Switching Time (nS)
IC (A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=15Ω
ΩΩ
Ω)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 40 80 120 160
Switching Time (nS)
Rg(Ω
ΩΩ
Ω)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=20A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
0 50 100 150 200
Switching Time (nS)
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=20A,Rg=15Ω
ΩΩ
Ω)
Td(off)
Tf
Td(on)
Tr
Rev.6.0: May 2014 www.aosmd.com Page 5 of 9
AOK20B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
0 10 20 30 40 50
SwitchIng Energy (mJ)
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=15Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
0
1
2
3
0 50 100 150 200
Switching Energy (mJ)
Rg(Ω
ΩΩ
Ω)
Figure 16: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=20A)
Eoff
Eon
Etotal
0.5
1
1.5
2
Switching Energy (mJ)
Eoff
Eon
Etotal
0.4
0.8
1.2
1.6
2
Switching Energ y (mJ)
Eoff
Eon
Etotal
0
1
2
3
4
0 10 20 30 40 50
SwitchIng Energy (mJ)
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=15Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
0
1
2
3
0 50 100 150 200
Switching Energy (mJ)
Rg(Ω
ΩΩ
Ω)
Figure 16: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=20A)
Eoff
Eon
Etotal
0
0.5
1
1.5
2
0 50 100 150 200
Switching Energy (mJ)
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=20A,Rg=15Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
0
0.4
0.8
1.2
1.6
2
200 250 300 350 400 450 500
Switching Energ y (mJ)
VCE (V)
Figure 18: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=20A,Rg=15Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
Rev.6.0: May 2014 www.aosmd.com Page 6 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
50
100
150
200
250
0
5
10
15
20
25
S
Trr (nS)
175°C
25°C
175°C
25°C
Trr
S
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
I
rm
(A)
Qrr (nC)
25°C
175°C
175°C
25°C
Qrr
Irm
13V
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 50 100 150 200
ICE(S) (A)
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=600V
VCE=400V
0
0.4
0.8
1.2
1.6
2
0 50 100 150 200
VSD (V)
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
20A
10
A
5A
IF=1A
0
2
4
6
8
10
0
50
100
150
200
250
0 5 10 15 20 25
S
Trr (nS)
IS(A)
Fig 22: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µµ
µs)
175°C
25°C
175°C
25°C
Trr
S
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25
I
rm
(A)
Qrr (nC)
IF(A)
Fig 21: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µµ
µs)
25°C
175°C
175°C
25°C
Qrr
Irm
13V
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 50 100 150 200
ICE(S) (A)
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=600V
VCE=400V
0
0.4
0.8
1.2
1.6
2
0 50 100 150 200
VSD (V)
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
20A
10
A
5A
IF=1A
0
2
4
6
8
10
0
50
100
150
200
250
100 200 300 400 500 600 700 800 900
S
Trr (nS)
di/dt (A/µ
µµ
µS)
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=10A)
25
°
C
175°C
25°C
175°C
Trr S
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
100 200 300 400 500 600 700 800 900
I
rm
(A)
Qrr (nC)
di/dt (A/µ
µµ
µS)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=10A)
175°C
25°C175°C
25°C
Qrr
Irm
Rev.6.0: May 2014 www.aosmd.com Page 7 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1
E
-
05
0
.
0001
0
.
001
0
.
01
0
.
1
1
10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
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AOK20B60D1
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