Philips Semiconductors Product specification Silicon diffused power transistors BUS508AF; BU508DF Ceeeeeeeeeeree eee eeeeeeeeeee reer errr reer ee re High-voltage, high-speed switching npn transistors in a fully isolated SOT 199 envelope (with integrated efficiency diode for the BU508DF), primarily intended for use in horizontal deflection circuits of colour television receivers, QUICK REFERENCE DATA Coliector-emitter voltage peak value; Vag = 0 VcESM max. 1500 V open base VcEO max. 700 V Collector saturation current lCsat max. 45 A Collector current (DC) Io max. BA Collector current (peak value} !cm max. 15 A Total power dissipation up to Ty = 25 C Prot max. 34 W Collector-emitter saturation voltage VCEsat max. 1Vv Diode forward voltage IF = 4,5 A (BUS508DF) VE typ. 1,6 V Fall time tt typ. 0,7 us MECHANICAL DATA Dimensions in mm Fig. 1 SOT1989. 153 max ~ oe ~ 2 " 73 - ~] 32-2 2 t 31 t 07 =e on f | 62 PT NO yb 1 58 LLLINg - =, P TIT 3 3 215 max BUSO8AF BUS08DF not tinned = 1 1 = base 25 man 2 = collector j 3 = emitter 24 Mounting base is electrically max isolated from all terminals. tet nt? ~[ro9|+ wi le 20 MBC023 MB 71108eb OO77474 140 December 1991 69 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BU508AF; BU508DF RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage peak value; Vpg = 0 VcESM max. 1500 V open base VCEO max. 700 V Collector current DC ic max. 8A peak value lcm max. 1b A saturation ICsat max. 45 A Base current DC Ip max. 4A peak value lena max. 6A Total power dissipation up to Tp = 25 9C* Prot max. 34 W Storage temperature Tstg 65 to + 150 OC Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to mounting base Rthj-mb = 1 K/W From junction to external heatsink * Rthj-h = 3,7 K/W From junction to external heatsink ** Rthj-h = 2,8 K/W From junction to ambient Rthj-a = 35 K/W ISOLATION Isolation voltage from all terminals to external heatsink (peak value) Visol max. 1500 V Isolation capacitance from collector to external heatsink Cisot typ. 21 pF CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current Vce = Vcesmax: VBE = 9 ICES max. 1 mA Voce = Vcesmax: Vge = 9; Tj = 125 OC ices max. 2 mA Emitter cut-off current Veg =6V;Ic=0 lEBO max. 10 mA DC current gain Ic = 100 mA; Vce = 5 V hFE min. 6 hee typ. 13 hre max. 30 * Mounted without heatsink compound and 30 + 5 newtons pressure on centre of envelope. ** Mounted with heatsink compound and 30+ 5 newtons pressure on centre of envelope. We 7120826 OOT747?S Ob? = December 1991 70 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Silicon diffused power transistors Product specification BU508AF; BUS08DF Saturation voltages lo=Icsat'Ip=2A Diode forward voltage lp = 4,5 A (BUSO8DF} Collector-emitter sustaining voltage ie = 0,1 A; lp =0;L=25 mH 1 min Voeo sust | i Veeo 1) TZBZI40 Fig. 2 Oscilloscope display for VcEOsust. Second-breakdown current Vee = 120 V; T = 200 ps Transition frequency at f = 5 MHz c= OTA Voe=5V Collector capacitance at f = 1 MHz le = ia = 0; Veg =10V Switching times in horizontal deflection circuit Vim =4V;i bg =6e4H Io = Isat? IBlend) = 14A (dip/dt = 0,6 A/us) M8 7110826 OO7747b T13 December 1991 Printed From CAPS XPert Version 1.2P VcEsat max. 1Vv VBEsat max, 13 V Ve max. 2V VE typ. 1,6 V VcEOsus min. 700 V +50V 100-2002 horizontal oscilloscope vertical 3002 in GV 30-60 Hz 7 72247186 Fig. 3 Test circuit for VceqQgust- Isp min, tA fr typ. 7 MHz Cy typ. 125 pF tf typ. 0,7 us ts typ. 6,5 ys This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Silicon diffused power transistors Product specification BU508AF; BU508DF I \ cM -~90% Cc BUS50BD BU508A \ =~ =10% | sb aol tle t I 7 I 7 ~; t, e L-7 'B !Bton} t 20s 25us 64yus - VCE t FZ24366 Fig. 4 Switching times waveforms. 72810161 100 tot max (%) 50 50 Fig. 5 Power derating curve. me 7120826 GOTrk?? IST December 1991 72 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors. oO 150 Tmb tChPhilips Semiconductors Product specification Silicon diffused power transistors BU508AF; BUS08DF 2 7E21067 VoEsat (v) Fig. 6 Typical vatues Ic/Ip = 2; Tj =25 oC, LA FZ21068 Vee (v) 4,2 \c* a 6A] + 1,0 , 5A t 3A 08 06 F 3 5 4 1 lg {A} Fig. 7 Typicat values base-emitter voltage at Tj = 25 %, MB 7110826 0077478 496 oe December 1991 73 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BU508AF; BU508DF 7220065 100 hee 0,1 Ig (Al Fig. 8 Typical values DC current gain at Vcp = 5 V; Tj = 25 9C. 7221066 10 VocEsat (Vv) 0,1 1 1 0, 19 (Al 0 Fig. 9 Typical vaiues collector-emitter voltage at Tj = 25 C. MS 71208eb OOP74?4A 72: December 1991 74 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BU508AF; BU508DF 7221064 102 Ic (Al 10 ; Prot max 1971 10-2 10-3 10-4 2 3 104 3 10 10 10 Vee (V) | Region of permissible DC operation. II Permissible extension for repetitive pulse operation. Note: Mounted without heatsink compound and 30 + 5 newtons Pressure on the centre of the envelope. Fig. 10 Safe Operating Area; T,, = 25C. MB 7110826 00774a0 uy December 1991 75 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUS508AF; BUS08DF FZ2NOEF 'c (A) Pp tot max 10-1 10-2 10-4 1 10 107 103 104 Vee !) i Region of permissible DC operation. II Permissible extension for repetitive pulse operation. Note: Mounted with heatsink compound and 30 + 5 newtons pressure on the centre of the envelope. Fig. 11 Safe Operating Area; T,, = 259C. MB 71108eb 0077481 380 | December 1991 76 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.