© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5 1Publication Order Number:
MBR2030CTL/D
MBR2030CTLG
Switch-mode
Dual Schottky
Power Rectifier
Features and Benefits
•Highly Stable Oxide Passivated Junction
•Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
•High Junction Temperature
•High dv/dt Capability
•Excellent Ability to Withstand Reverse Avalanche Energy Transients
•Low Power Loss/High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•20 A Total (10 A Per Diode Leg)
•This Device is Pb−Free and is RoHS Compliant*
Applications
•Power Supply − Output Rectification
•Power Management − ORING
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec
•ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
3
2, 4
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 30 VOLTS
TO−220
CASE 221A
STYLE 6
3
4
12
MARKING
DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MBR2030CTLG TO−220
(Pb−Free) 50 Units/Rail
www.onsemi.com
AYWW
B2030LG
AKA
A = Assembly Location
Y = Year
WW = Work Week
B2030L = Device Code
G = Pb−Free Package
AKA = Diode Polarity
MBR2030CTLG
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2
MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
Average Rectified Forward Current
(TC = 167_C)
Per Diode
Per Device
IF(AV)
10
20
A
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 166°C) IFRM 10 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Operating Junction Temperature (Note 1) TJ*65 to +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case (Min. Pad) RqJC 2.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad) RqJA 60 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TJ= 25°C)
(iF = 10 Amps, TJ = 150°C)
(iF = 20 Amps, TJ = 25°C)
(iF = 20 Amps, TJ = 150°C)
vF−
−
−
−
0.45
0.32
0.51
0.41
0.52
0.40
0.58
0.48
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 125°C)
iR−
−
−
0.11
10
−
5.0
40
75
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤10%.
MBR2030CTLG
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3
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
TA, AMBIENT TEMPERATURE (°C)
05025 75
2.0
4.0
6.0
8.0
10
TC, CASE TEMPERATURE (C°)
180
14
4.0
0
dc
SQUARE WAVE
145 155 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
2.0
12
16
6.0
8.0
10
12
14
16
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
TJ = 175°C
100
10
1.0
100°C
Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current
140 150
Figure 4. Current Derating, Case Per Leg
0100 125 150 175
SQUARE WAVE
RATED VOLTAGE APPLIED
RqJA = 16° C/W
dc
Figure 5. Current Derating, Ambient Per Leg
RqJA = 60° C/W
(NO HEATSINK)
Figure 6. Forward Power Dissipation
0.1 0.3 0.5 0.7 0.9 1.10.0
150°C
170 175
165
dc
VR REVERSE VOLTAGE (VOLTS)
01510 25 30
40
100
0.01
0.04
0.02
0.1
0.4
0.2
20
10
4
2
1
TJ = 150°C
I , REVERSE CURRENT (mA)
R
520
TJ = 100°C
TJ = 25°C
400
1000
200
4000
10000
2000
P , AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
04 12816
24
16
0
8
4
12
SQUARE WAVE
20 24 28 30
20
28
dc
26
18
2
10
6
14
22
30
210614182226
TJ = 175°C
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
TJ = 175°C
100
10
1.0
100°C
0.1 0.3 0.5 0.7 0.9 1.10.0
150°C
18
20
18
20
MBR2030CTLG
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5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBR2030CTL/D
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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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