TB6612FNG
Toshiba Bi-CD Integrated Circuit Silicon Monolithic
TB6612FNG
Driver IC for Dual DC motor
TB6612FNG is a driver IC for DC motor with output transistor in
LD MOS structure with low ON-resistor. Two input signals, IN1
and IN2, can choose one of four modes such as CW, CCW, short
brake, and stop mode.
Features
• Power supply voltage: VM = 15 V(Max)
• Output current: IOUT = 1.2 A(ave)/3.2 A (peak)
• Output low ON resistor: 0.5Ω (upper+lower Typ. @ VM ≥ 5 V)
• Standby (Power save) system
• CW/CCW/short brake/stop function modes
• Built-in thermal shutdown circuit and low voltage detecting circuit
• Small faced package(SSOP24: 0.65 mm Lead pitch)
* This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product,
ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive
mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at
reasonable levels.
Weight: 0.14 g (typ.)
© 2014 TOSHIBA Corporation
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TB6612FNG
Block Diagram
Pin Functions
No.
Pin Name
I/O
Function
1
AO1
O ch A output 1
2
AO1
3
PGND1
― Power GND 1
4
PGND1
5
AO2
O ch A output 2
6
AO2
7
BO2
O ch B output 2
8
BO2
9
PGND2
― Power GND 2
10
PGND2
11
BO1
O ch B output 1
12
BO1
13
VM2
― Motor supply
14
VM3
15
PWMB
I
ch B PW M input/200 kΩ pull-down at internal
16
BIN2
I
ch B input 2/200 kΩ pull-down at internal
17
BIN1
I
ch B input 1/200 kΩ pull-down at internal
18
GND
―
Small signal GND
19
STBY
I
“L” = standby/200 kΩ pull-down at internal
20
Vcc
―
Small signal supply
21
AIN1
I
ch A input 1/200 kΩ pull-down at internal
22
AIN2
I
ch A input 2/200 kΩ pull-down at internal
23
PWMA
I
ch A PWM input/200 kΩ pull-down at internal
24
VM1
―
Motor supply
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TB6612FNG
Absolute Maximum Ratings (Ta = 25°C)
Operating Ra nge (Ta = -20 to 85°C)
Characteristics Symbol Rating Unit Remarks
Supply voltage
VM
V
V
CC
6
Input voltage V
IN
-0.2 to 6 V IN1,IN2,STBY,PWM pins
Output voltage
VOUT
V
O1,O2 pins
Output current
IOUT
A
Per 1 ch
IOUT (peak) 2 tw = 20 ms Continuous puls e, Duty ≤ 20%
3.2 tw = 10 ms Single pulse
Power dissipation PD
W
IC only
50 mm × 50 mm t = 1.6 mm Cu ≥ 40% in PCB mounting
1.36 76.2 mm × 114.3 mm t = 1.6 mm Cu ≥
30% in PCB
mounting
Operating temperature
Topr
°C
S torage temperature T
stg
-55 to 150 °C
Characteristics Symbol Min Typ. Max Unit Remarks
Supply voltage
VCC
2.7
3
5.5
V
VM
2.5
5
13.5
V
Output current (H-SW) IOUT
―
―
1.0
A
VM ≥ 4.5 V
― ― 0.4 4.5 V > VM ≥ 2.5 V
Without PWM Operation
Switching frequency
fPWM
―
―
100
kHz
入力端子; IN1,IN2,PWM,STBY
Vcc
GND
Input
Internal
circuit
200kΩ
出力端子; O1,O2
VM
PGND
O1
O2
Input pin:
Output pin:
O1, O2
O1 O2
VM
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TB6612FNG
H-SW Control Function
Input
Output
IN1 IN2 PWM STBY OUT1 OUT2 Mode
H H H/L H L L Short brake
L H H H L H CCW
L H L L Short brake
H L H H H L CW
L H L L Short brake
L L H H OFF
(High impedance) Stop
H/L H/L H/L L OFF
(High impedanc e) Standby
H-SW Operating Description
・To prevent penetrating current, dead time t2 and t4 is provided in switching to each mode in the IC.
VM
VM
VM
M
VM
GND
<ON>
t5
M
VM
GND
<OFF>
t4
M
GND
M
GND
<Short brake>
t3
M
GND
<OFF>
t2
<ON>
t1
OUT2
OUT1
OUT1
OUT1
OUT1
OUT1
OUT2
OUT2
OUT2
OUT2
GND
VM
OUT1
Voltage wave
t1
t2
t3
t5
t4
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TB6612FNG
Electrical Characteristics (unless other wise specified, Ta = 25°C, Vcc = 3 V, VM = 5 V)
Characteristics Symbol Test Condition Min Typ. Max Unit
Supply current
ICC(3 V)
STBY = Vcc = 3 V, VM = 5 V
―
1.1
1.8
mA
I
CC
(5.5 V) STBY = Vcc = 5.5 V, VM
= 5 V
―
1.5 2.2
ICC(STB)
STBY = 0 V
―
―
1
μA
I
M(STB)
―
―
1
Control input voltage
VIH
―
Vcc×0.7
―
Vcc+0.2
V
V
IL
-0.2
―
Vcc×0.3
Control input current
IIH
VIN = 3 V
5
15
25
μA
I
IL
V
IN
= 0 V
―
―
1
Standby input voltage
VIH(STB)
―
Vcc×0.7
―
Vcc+0.2
V
V
IL(STB)
-0.2
―
Vcc×0.3
S t andby input current
IIH(STB)
VIN = 3 V
5
15
25
μA
I
IL(STB)
V
IN
= 0 V
―
―
1
Output saturating voltage V
sat(U+L)1
I
O
= 1 A, Vcc = VM
= 5 V ― 0.5 0.7 V
Vsat(U+L)2
IO = 0.3 A, Vcc = VM = 5 V
―
0.15
0.21
Output leakage current
IL(U)
VM = VOUT = 15 V
―
―
1
μA
IL(L)
VM = 15 V, VOUT = 0 V
-1
―
―
Regenerative diode VF
VF(U)
IF = 1A
―
1
1.1
V
VF(L)
―
1
1.1
Low voltage detecting
voltage
UVLD (Design target only) ― 1.9 ― V
Recovering voltage
UVLC
―
2.2
―
Response speed
tr
(Design target only) ―
24
―
ns
tf
―
41
―
Dead
time
H to L
Penetration protect time
(Design target only)
―
50
―
L to H
―
230
―
Thermal shutdown circuit
operating tem perat ure
TSD (Design target only)
― 175 ― °C
Thermal shutdown
hysteresis
∆TSD ― 20 ―
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TB6612FNG
Target characteristics
PD - Ta
0.00
0.50
1.00
1.50
0 50 100 150
Ta (℃)
(w)
①
②
①IC単体θj-a=160℃/W
②基板実装時
PCB面積 50×50×1.6mm
Cu箔面積≧40%
③基板実装時
PCB面積 76.2×114.3×1.6mm
Cu箔面積≧30%
③
①IC only θj – a = 160°C/W
②
In boarding
PCB area 50 mm ×50 mm×1.6 mm
Cu are a ≥ 40%
③
In boarding
PCB area 76.2 m m×114.3 mm× 1 . 6 mm
Cu area ≥ 30%
Power dissipation PD
PD - Ta
Ta = 25°C, IC only
1 ch driving
2 ch driving
Iout - Duty
0.0
0.5
1.0
1.5
2.0
2.5
0% 20% 40% 60% 80% 100%
Duty
(A)
2ch動作時
1ch動作時
Ta=25℃,IC単体
Output current
IOUT
IOUT - Duty
Dual-channel operation
Single-channel operat ion
Ta = 25°C, IC only
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TB6612FNG
Typical Application Diagram
Note: Condensers for noise absorption (C1, C2, C3, and C4) should be connec t ed as close as po ssi ble to the IC.
+4.5V
～13.5V
+
C1
10uF
C2
0.1uF
M
MCU
STBY
AIN1
AIN2
PWMA
H-SW
Driver
A
18
TSD
Vcc
GND
2
AO1
24
VM1
Control
Logic
A
20
21
22
23
19
3
PGND1
BIN1
BIN2
PWMB
Control
Logic
B
17
16
15
STBY
UVLO
4
PGND1
1
AO1
6
AO2
5
AO2
H-SW
Driver
B
11
BO1
13
VM2
9
PGND2
10
PGND2
12
BO1
7
BO2
8
BO2
14
VM3
M
+2.7V
～5.5V
+
C3
10uF
C4
0.1uF
+2.7 V
to 5.5 V
+4.5 V
to 13.5 V
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TB6612FNG
Package Dimennsions
Weght: 0.14 g (typ)
Detail of a terminal
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TB6612FNG
Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified
for explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for
explanatory purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. A pplication Circuits
The application circuits shown in this document are provided for reference purposes only. Thorough
evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerations
Notes on handling of ICs
[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case
of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location,
are required.
[3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into
the design to prevent device malfunction or breakdown caused by the current resulting from the
inrush current at power ON or the negative current resulting from the back electromotive force at
power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is
unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
[4] Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
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TB6612FNG
Points to remember on handling of ICs
(1) Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal
shutdown circuits operate against the over temperature, clear the heat generation status
immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
(2) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at
any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown.
In addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
(3) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to
the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power
supply is small, the device’s motor power supply and output pins might be exposed to conditions
beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into
consideration in system design.
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TB6612FNG
RESTRICTIONS ON PRODUCT USE
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responsibl e for compl ying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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all relevant TOSHIBA information, includi ng without limi tation, this document, the specifications, the data sheets and applicati on notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliabilit y Handbook " and (b) the
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own product design or applications, includi ng but not limit ed to (a) determini ng the appropriateness of the use of this Product in suc h
design or applications; (b) evaluat ing and determ i ni ng the applic ability of any information contained in this document, or in charts,
diagrams, programs, al gorithms , sample application circuits, or any other referenced documents; and (c) validating all operating
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APPLICATIONS.
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