UNISONIC TECHNOLOGIES CO., LTD
2SA1012
PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2013 Unisonic Technologies Co., Ltd QW-R203-015,I
HIGH CURRENT SWITCHING
APPLICATION
.
FEATURES
*Low Collector Saturation Voltage
V
CE(SAT)=-0.4V(max.) At Ic=-3A
*High Speed Switching Time: tS=1.0s(Typ.)
*Complementary To 2SC2562
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Plating Halogen Free 1 2 3
2SA1012L-x-TA3-T 2SA1012G-x-TA3-T TO-220 B C E Tube
2SA1012L-x-TF3-T 2SA1012G-x-TF3-T TO-220F
B C E Tube
2SA1012L-x-TM3-T 2SA1012G-x-TM3-T TO-251 B C E Tube
2SA1012L-x-TN3-R 2SA1012G-x-TN3-R TO-252 B C E Tape Reel
2SA1012L-x-TN3-T 2SA1012G-x-TN3-T TO-252 B C E Tube
2SA1012L-x-TA3-T
(1)Packing Type
(2)Package Type
(4)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN3: TO-252
(4) L: Lead Free Plating, G: Halogen Free
(3)Rank (3) x: reference to Classification of hFE1
2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-015,I
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Collector-Emitter Voltage VEBO -5 V
Peak Collector Current IC -5 A
Power Dissipation PD 25 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=-100μA, IE=0 -60 V
Collector-Emitter Breakdown Voltage BVCEO I
C=-10mA, IB=0 -50 V
Emitter-Base Breakdown Voltage BVEBO I
E=-100μA, IC=0 -5 V
Collector Cut-off Current ICBO V
CB=-50V, IE=0 -1.0 μA
Emitter Cut-off Current IEBO V
EB=-5V, IC=0 -1.0 μA
DC Current Gain hFE1 V
CE=-1V, IC=-1A 70 360
hFE2 V
CE=-1V, IC=-3A 30
Collector-Emitter Saturation Voltage VCE
(
SAT
)
IC=-3A, IB=-0.15A -0.2 -0.4 V
Base-Emitter Saturation Voltage VBE
(
SAT
)
IC=-3A, IB=-0.15A -0.9 -1.2 V
Transition frequency fT V
CE=-4V, IC=-1A 60 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 170 pF
Switching time
Turn-on time tON 0.1 μs
Storage time tS 1.0 μs
Fall time tF 0.1 μs
CLASSIFICATION of hFE1
RANK O Y R R1
RANGE 70 ~ 140 120 ~ 240 180 ~ 360 >255
2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw QW-R203-015,I
■ TYPICAL CHARACTERISTICS
2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R203-015,I
TYPICAL CHARACTERICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
