BSP75N ADVANCE INFORMATION 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Features and Benefits Continuous Drain Source Voltage: VDS = 60V On-State Resistance: 500m Max Nominal Load Current (VIN = 5V): 1.1A Min Nominal Load Current (VIN = 5V): 0.7A Clamping Energy: 550mJ Description The BSP75N is a self-protected, low-side MOSFET. It features monolithic overtemperature, overcurrent, overvoltage (active clamp), and ESD protected logic-level functionality. It is intended as a general purpose switch. Short-Circuit Protection With Auto Restart Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Input Protection (ESD) Load-Dump Protection (Actively Protects Load) Logic-Level Input High Continuous Current Rating Lead-Free Finish; RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Applications Mechanical Data Especially Suited for Loads With High Inrush Current, Such as Lamps and Motors All Types of Resistive, Inductive, and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Automotive Rated Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability--Current-Limiting Protection Circuitry is Designed to Deactivate at Low VDS to not Compromise the Load Case: SOT223 (Type DN) Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish e3 Weight: 0.112 grams (Approximate) Current During Normal Operation. Maximum DC Operating Current is Therefore Determined by Thermal Capability of the Package/Board Combination Rather Than by Protection Circuitry, Which Does not Compromise the Product's Ability to Self-Protect at Low VDS. SOT223 (Type DN) Top View (Note 5) Top View Pin Out Ordering Information (Note 4) Product BSP75NTA Notes: Marking BSP75N Reel Size (inches) 7 Tape Width (mm) 12 Quantity per Reel 1000 Units 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, see https://www.diodes.com/design/support/packaging/diodes-packaging/. 5. The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance. IntelliFET is a trademark of Diodes Incorporated. BSP75N Document number: DS33016 Rev. 5 - 2 1 of 9 www.diodes.com June 2018 (c) Diodes Incorporated BSP75N ADVANCE INFORMATION Marking Information (01 to 53) Functional Block Diagram Over Voltage Protection dV/dt Limitation Human Body ESD Protection Over Temperature Protection Logic Over Current Protection BSP75N Document number: DS33016 Rev. 5 - 2 2 of 9 www.diodes.com June 2018 (c) Diodes Incorporated BSP75N Absolute Maximum Ratings (@TA = +25C, unless otherwise stated.) ADVANCE INFORMATION Parameter Symbol Limit Unit VDS 60 V Drain-Source Voltage for Short Circuit Protection VIN = 5V VDS(SC) 36 V Drain-Source Voltage for Short Circuit Protection VIN = 10V VDS(SC) 20 V Continuous Input Voltage VIN -0.2 to 10 V Peak Input Voltage VIN -0.2 to 20 V Operating Temperature Range TJ -40 to +150 C TSTG -55 to +150 C Continuous Drain-Source Voltage Storage Temperature Range Power Dissipation at TA = +25C (Note 6) PD 1.5 W Power Dissipation at TA = +25C (Note 8) PD 0.6 W Continuous Drain Current @ VIN=10V; TA = +25C (Note 6) ID 1.3 A Continuous Drain Current @ VIN=5V; TA = +25C (Note 6) ID 1.1 A Continuous Drain Current @ VIN=5V; TA = +25C (Note 8) ID 0.7 A Continuous Source Current (Body Diode) (Note 6) IS 2.0 A IS 3.3 A Pulsed Source Current (Body Diode) (Note 7) Unclamped Single Pulse Inductive Energy Load Dump Protection Electrostatic Discharge (Human Body Model) DIN Humidity Category, DIN 40 040 IEC Climatic Category, DIN IEC 68-1 EAS 550 mJ VLOAD_DUMP 80 V VESD 4000 V -- -- E 40/150/56 -- -- Thermal Resistance Symbol Limit Unit Junction to Ambient (Note 6) Parameter RJA 83 C/W Junction to Ambient (Note 7) RJA 45 C/W Junction to Ambient (Note 8) RJA 208 C/W Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 board with a high coverage of single-sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically isolated. 7. For a device surface mounted on FR-4 board as (a) and measured at t < = 10s. 8. For a device surface mounted on FR-4 board with the minimum copper required for electrical connections. BSP75N Document number: DS33016 Rev. 5 - 2 3 of 9 www.diodes.com June 2018 (c) Diodes Incorporated BSP75N ADVANCE INFORMATION Electrical Characteristics (@TA = +25C, unless otherwise stated.) Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 70 75 V ID=10mA Off State Drain Current IDSS -- 0.1 3 A VDS=12V, VIN=0V Off State Drain Current IDSS -- 3 15 A VDS=32V, VIN=0V VIN(TH) 1 2.1 -- V VDS=VGS, ID=1mA Input Current IIN -- 0.7 1.2 mA VIN=5V Input Current IIN -- 1.5 2.7 mA VIN=7V 4 7 mA VIN=10V Input Threshold Voltage (Note 9) Conditions IIN -- Static Drain-Source On-State Resistance RDS(ON) -- 520 675 m VIN=5V, ID=0.7A Static Drain-Source On-State Resistance RDS(ON) -- 385 550 m VIN=10V, ID=0.7A ID(LIM) 0.7 1.0 1.5 A VIN=5V, VDS>5V ID(LIM) 1 1.8 2.3 A VIN=10V, VDS>5V Turn-On Time (VIN to 90% ID) tON -- 3 -- s RL=22, VIN=0 to 10V, VDD=12V Turn-Off time (VIN to 90% ID) tOFF -- 13 -- s RL=22, VIN=10V to 0V, VDD=12V Slew Rate On (70 to 50% VDD) -dVDS/dtON -- 8 -- V/s RL=22, VIN=0 to 10V, VDD=12V Slew Rate Off (50 to 70% VDD) Protection Functions (Note 11) Minimum Input Voltage for Over Temperature Protection Thermal Overload Trip Temperature dVDS/dtON -- 3.2 -- V/s RL=22, VIN=10V to 0V, VDD=12V VPROT 4.5 -- -- V -- TJT +150 +175 -- C -- -- -- +1 -- C -- EAS 550 -- -- mJ ID(ISO)=0.7A, VDD=32V EAS 200 -- -- mJ ID(ISO)=0.7A, VDD=32V VSD -- -- 1 V Input Current Current Limit (Note 10) Current Limit (Note 10) Dynamic Characteristics Thermal Hysteresis Unclamped Single Pulse Inductive Energy TJ = +25C Unclamped Single Pulse Inductive Energy TJ = +150C Inverse Diode Source Drain Voltage Notes: VIN=0V, -ID=1.4A 9. Protection features may operate outside spec for VIN < 4.5V. 10. The drain current is limited to a reduced value when VDS exceeds a safe level. 11. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. BSP75N Document number: DS33016 Rev. 5 - 2 4 of 9 www.diodes.com June 2018 (c) Diodes Incorporated BSP75N Application Information ADVANCE INFORMATION The current-limit protection circuitry is designed to deactivate at low VDS to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination rather than by the protection circuitry (see Typical Output Characteristics graphs). This does not compromise the products ability to self-protect at low VDS. The overtemperature protection circuit trips at a minimum of +150C, so the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents. Minimum Copper Area Characteristics For minimum copper condition as described in Note 8. Maximum Continuous Current Max Ambient Temperature TA -- VIN = 5V VIN = 10V +25C at VIN = 5V 720mA 840mA +70C at VIN = 5V 575mA 670mA +85C at VIN = 5V 520mA 605mA +125C at VIN = 5V 320mA 375mA See Note 8 TA=25C TA = 25C TA = 25C BSP75N Document number: DS33016 Rev. 5 - 2 5 of 9 www.diodes.com June 2018 (c) Diodes Incorporated BSP75N Large Copper Area Characteristics ADVANCE INFORMATION For large copper area as described in Note 6. Maximum Continuous Current /mA Max Ambient Temperature TA -- VIN = 5V VIN = 10V +25C at VIN = 5V 1140mA 1325mA +70C at VIN = 5V 915mA 1060mA +85C at VIN = 5V 825mA 955mA +125C at VIN = 5V 510mA 590mA See Note 6 TA=25C TA=25C TA=25C BSP75N Document number: DS33016 Rev. 5 - 2 6 of 9 www.diodes.com June 2018 (c) Diodes Incorporated BSP75N ADVANCE INFORMATION Typical Characteristics BSP75N Document number: DS33016 Rev. 5 - 2 7 of 9 www.diodes.com June 2018 (c) Diodes Incorporated BSP75N Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) D b2 C E1 E Gauge Plane 0.25 Seating Plane e L b e1 A A1 SOT223 (Type DN) Dim Min Max Typ A -1.70 -A1 0.01 0.15 -A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -c 0.20 0.32 -D 6.30 6.70 -E 6.70 7.30 -E1 3.30 3.70 -e --2.30 e1 --4.60 L 0.85 --All Dimensions in mm A2 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) X1 Y1 C1 Y2 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X BSP75N Document number: DS33016 Rev. 5 - 2 C 8 of 9 www.diodes.com June 2018 (c) Diodes Incorporated ADVANCE INFORMATION BSP75N IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2018, Diodes Incorporated www.diodes.com BSP75N Document number: DS33016 Rev. 5 - 2 9 of 9 www.diodes.com June 2018 (c) Diodes Incorporated