BSP75N
Document number: DS33016 Rev. 5 - 2
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BSP75N
ADVANCE INFO R MA T I O N
60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH
Product Summary
Continuous Drain Source Voltage: VDS = 60V
On-State Resistance: 500mΩ
Max Nominal Load Current (VIN = 5V): 1.1A
Min Nominal Load Current (VIN = 5V): 0.7A
Clamping Energy: 550mJ
Description
The BSP75N is a self-protected, low-side MOSFET. It features
monolithic overtemperature, overcurrent, overvoltage (active clamp),
and ESD protected logic-level functionality. It is intended as a general
purpose switch.
Applications
Especially Suited for Loads With High Inrush Current, Such as
Lamps and Motors
All Types of Resistive, Inductive, and Capacitive Loads in
Switching Applications
µC Compatible Power Switch for 12V and 24V DC Applications
Automotive Rated
Replaces Electromechanical Relays and Discrete Circuits
Linear Mode Capability—Current-Limiting Protection Circuitry is
Designed to Deactivate at Low VDS to not Compromise the Load
Current During Normal Operation. Maximum DC Operating
Current is Therefore Determined by Thermal Capability of the
Package/Board Combination Rather Than by Protection
Circuitry, Which Does not Compromise the Product’s Ability to
Self-Protect at Low VDS.
Features and Benefits
Short-Circuit Protection With Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
Load-Dump Protection (Actively Protects Load)
Logic-Level Input
High Continuous Current Rating
Lead-Free Finish; RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT223 (Type DN)
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
(Note 5)
Ordering Information (Note 4)
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
BSP75N
7
12
1000 Units
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, see https://www.diodes.com/design/support/packaging/diodes-packaging/.
5. The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is
recommended for best thermal performance.
Top View
SOT223 (Type DN)
Top View
Pin Out
IntelliFET is a trademark of Diodes Incorporated.
e3
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Marking Information
Functional Block Diagram
Over Voltage
Protection
Over
Temperature
Protection
Human
Body ESD
Protection
Over Current
Protection
Logic
dV/dt
Limitation
(01 to 53)
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Parameter
Symbol
Limit
Unit
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for Short Circuit Protection VIN = 5V
VDS(SC)
36
V
Drain-Source Voltage for Short Circuit Protection VIN = 10V
VDS(SC)
20
V
Continuous Input Voltage
VIN
-0.2 to 10
V
Peak Input Voltage
VIN
-0.2 to 20
V
Operating Temperature Range
TJ
-40 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Power Dissipation at TA = +25°C (Note 6)
PD
1.5
W
Power Dissipation at TA = +25°C (Note 8)
PD
0.6
W
Continuous Drain Current @ VIN=10V; TA = +25°C (Note 6)
ID
1.3
A
Continuous Drain Current @ VIN=5V; TA = +25°C (Note 6)
ID
1.1
A
Continuous Drain Current @ VIN=5V; TA = +25°C (Note 8)
ID
0.7
A
Continuous Source Current (Body Diode) (Note 6)
IS
2.0
A
Pulsed Source Current (Body Diode) (Note 7)
IS
3.3
A
Unclamped Single Pulse Inductive Energy
EAS
550
mJ
Load Dump Protection
VLOAD_DUMP
80
V
Electrostatic Discharge (Human Body Model)
VESD
4000
V
DIN Humidity Category, DIN 40 040
—
E
—
IEC Climatic Category, DIN IEC 68-1
—
40/150/56
—
Thermal Resistance
Parameter
Symbol
Limit
Unit
Junction to Ambient (Note 6)
RϴJA
83
C/W
Junction to Ambient (Note 7)
RϴJA
45
C/W
Junction to Ambient (Note 8)
RϴJA
208
C/W
Notes: 6. For a device surface mounted on 25mm × 25mm × 1.6mm FR-4 board with a high coverage of single-sided 2oz weight copper. Allocation of 6cm2 copper
33% to source tab and 66% to drain pin with source tab and drain pin electrically isolated.
7. For a device surface mounted on FR-4 board as (a) and measured at t < = 10s.
8. For a device surface mounted on FR-4 board with the minimum copper required for electrical connections.
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Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
70
75
V
ID=10mA
Off State Drain Current
IDSS
—
0.1
3
µA
VDS=12V, VIN=0V
Off State Drain Current
IDSS
—
3
15
µA
VDS=32V, VIN=0V
Input Threshold Voltage (Note 9)
VIN(TH)
1
2.1
—
V
VDS=VGS, ID=1mA
Input Current
IIN
—
0.7
1.2
mA
VIN=5V
Input Current
IIN
—
1.5
2.7
mA
VIN=7V
Input Current
IIN
—
4
7
mA
VIN=10V
Static Drain-Source On-State Resistance
RDS(ON)
—
520
675
mΩ
VIN=5V, ID=0.7A
Static Drain-Source On-State Resistance
RDS(ON)
—
385
550
mΩ
VIN=10V, ID=0.7A
Current Limit (Note 10)
ID(LIM)
0.7
1.0
1.5
A
VIN=5V, VDS>5V
Current Limit (Note 10)
ID(LIM)
1
1.8
2.3
A
VIN=10V, VDS>5V
Dynamic Characteristics
Turn-On Time (VIN to 90% ID)
tON
—
3
—
μs
RL=22Ω, VIN=0 to 10V, VDD=12V
Turn-Off time (VIN to 90% ID)
tOFF
—
13
—
μs
RL=22Ω, VIN=10V to 0V, VDD=12V
Slew Rate On (70 to 50% VDD)
-dVDS/dtON
—
8
—
V/μs
RL=22Ω, VIN=0 to 10V, VDD=12V
Slew Rate Off (50 to 70% VDD)
dVDS/dtON
—
3.2
—
V/μs
RL=22Ω, VIN=10V to 0V, VDD=12V
Protection Functions (Note 11)
Minimum Input Voltage for Over
Temperature Protection
VPROT
4.5
—
—
V
—
Thermal Overload Trip Temperature
TJT
+150
+175
—
C
—
Thermal Hysteresis
—
—
+1
—
C
—
Unclamped Single Pulse Inductive Energy
TJ = +25°C
EAS
550
—
—
mJ
ID(ISO)=0.7A, VDD=32V
Unclamped Single Pulse Inductive Energy
TJ = +150°C
EAS
200
—
—
mJ
ID(ISO)=0.7A, VDD=32V
Inverse Diode
Source Drain Voltage
VSD
—
—
1
V
VIN=0V, -ID=1.4A
Notes: 9. Protection features may operate outside spec for VIN < 4.5V.
10. The drain current is limited to a reduced value when VDS exceeds a safe level.
11. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered
as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation.
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Application Information
The current-limit protection circuitry is designed to deactivate at low VDS to prevent the load current from being unnecessarily restricted during
normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination rather
than by the protection circuitry (see Typical Output Characteristics graphs). This does not compromise the products ability to self-protect at low VDS.
The overtemperature protection circuit trips at a minimum of +150°C, so the available package dissipation reduces as the maximum required
ambient temperature increases. This leads to the following maximum recommended continuous operating currents.
Minimum Copper Area Characteristics
For minimum copper condition as described in Note 8.
Max Ambient Temperature TA
Maximum Continuous Current
—
VIN = 5V
VIN = 10V
+25°C at VIN = 5V
720mA
840mA
+70°C at VIN = 5V
575mA
670mA
+85°C at VIN = 5V
520mA
605mA
+125°C at VIN = 5V
320mA
375mA
TA = 25°C
TA=25°C
TA = 25°C
See Note 8
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Large Copper Area Characteristics
For large copper area as described in Note 6.
Max Ambient Temperature TA
Maximum Continuous Current /mA
—
VIN = 5V
VIN = 10V
+25°C at VIN = 5V
1140mA
1325mA
+70°C at VIN = 5V
915mA
1060mA
+85°C at VIN = 5V
825mA
955mA
+125°C at VIN = 5V
510mA
590mA
TA=25°C
TA=25°C
TA=25°C
See Note 6
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Typical Characteristics
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
SOT223 (Type DN)
Dim
Min
Max
Typ
A
--
1.70
--
A1
0.01
0.15
--
A2
1.50
1.68
1.60
b
0.60
0.80
0.70
b2
2.90
3.10
--
c
0.20
0.32
--
D
6.30
6.70
--
E
6.70
7.30
--
E1
3.30
3.70
--
e
--
--
2.30
e1
--
--
4.60
L
0.85
--
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
D
b
e1
e
b2
A2
C
E
L
E1
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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