SIEMENS NPN Silicon AF Transistors BC 846 ... BC 850 Features @ For AF input stages and driver applications @ High current gain @ Low collector-emitter saturation voltage @ Low noise between 30 Hz and 15 kHz @ Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) YPSOS16t Type Marking Ordering Code Pin Configuration | Package) (tape and ree!) 1 2 3 BC 846A 1As Q62702-C1772 B E Cc | SOT-23 BC 846 B iBs Q62702-C1746 BC 847A 1Es Q62702-C 1884 BC 847B 1Fs Q62702-C1687 BC 847 1Gs Q62702-C1715 BC 848 A iJs Q62702-C1741 BC 848 B 1Ks Q62702-C1704 BC 848 C tLs Q62702-C 1506 BC 849 B 2Bs Q62702-C1727 BC 849 C 2Cs Q62702-C1713 BC 850 B 2Fs Q62702-C1885 BC 850 C 2Gs Q62702-C1712 1)For detailed information see chapter Package Outlines. Semiconductor Group 475 04.96SIEMENS BC 846 ... BC 850 Maximum Ratings Parameter Symbol Values Unit BC 846 | BC 847 | BC 848 BC 850 | BC 849 Collector-emitter voltage Veto 65 45 30 v Collector-base voltage Vewo 80 50 30 Collector-emitter voltage Voces 80 50 30 Emitter-base voltage Veso 6 6 5 Collector current Ic 100 mA Peak collector current Tom 200 Peak base current Tom 200 Peak emitter current Tem 200 Total power dissipation, Ts=71C | Prot 330 mw Junction temperature Tj 150 C Storage temperature range Tstg -65...+ 150 Thermal Resistance Junction - ambient) Rtnaa < 310 K/W Junction - soldering point Ris < 240 1)Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 476SIEMENS BC 846 ... BC 850 Electrical Characteristics at 7a = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter breakdown voltage Vipryceo Vv Ic=10mA BC 846 65 - - BC 847, BC 850 45 - ~ BC 848, BC 849 30 - ~ Collector-base breakdown voltage Viarceo Ic=10yA BC 846 80 - ~ BC 847, BC 850 50 - - BC 848, BC 849 30 - - Collector-emitter breakdown voltage Vipryces Ic =10 pA, Vac =0 BC 846 80 - - BC 847, BC 850 50 - _ BC 848, BC 849 30 - - Emitter-base breakdown voltage VipryEBo fe=1uA BC 846, BC 847 6 - - BC 848, BC 849, BC 850 5 - _ Collector cutoff current Teso Ves = 30 V - - 15 nA Vea = 30 V, Ta = 180 C - - 5 pA DC current gain re - Ie = 10 pA, Vee = 5 V BC 846 A, BC 847 A, BC 848A - 140 |- BC 846B... BC 850B - 250 |- BC 847 C, BC 848 C, BC 849 C, BC 850 C - 480 |- Io=2 mA, Voe=5V BC 846 A, BC 847 A, BC 848A 110 180 | 220 BC 846B ...BC 8508 200 {290 | 450 BC 847 C, BC 848 C, BC. 849 C, BC 850 C 420 | 520 800 Collector-emitter saturation voltage) Vcesat mV Ic= 10 MA, J2=0.5 MA ~ 90 250 Ic = 100 mA, fo = 5 mA - 200 =| 600 Base-emitter saturation voltage) Veesat Ic= 10mA, f2=0.5 mA ~ 700 | - Ic = 100 mA, Js =5 mA - 900 - Base-emitter voltage Veeion) Io= 2mMA, Vee =5V 580 | 660 | 700 Ic =10mA, Vee=5V - ~ 770 DPulse test: r< 300 us, D= 2 %. Semiconductor Group 477SIEMENS BC 846 ... BC 850 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. AC characteristics Transition frequency ff - 250 | - MHz Ic = 20 MA, Vee = 5 V, f= 100 MHz Output capacitance Coro - 3 - pF Vce = 10 V, f= 1 MHz Input capacitance Coo - 8 - Ves = 0.5 V, f= 1 MHz Short-circuit input impedance hite kQ Ic =2MA, Vee =5 V, f= 1 KHz BC 846A... BC 848A - 2.7 - BC 846B ... BC 850B - 4.5 - BC 847 C ....BC 850C - 8.7 - Open-circuit reverse voltage transfer ratio hie 10-4 Ice=2 mA, Vee = 5 V, f= 1 kHz BC 846A... BC 848A - 1.5 - BC 846B... BC 850B ~ 2.0 - BC 847 C ... BC 850 C - 3.0 - Short-circuit forward current transfer ratio hate - Io=2mA, Vee =5V, f= 1 kHz BC 846A... BC 848A - 200 ~|- BC 846 B... BC 850B - 330. | - BC 847C...BC 850C ~ 600 |- Open-circuit output admittance hee pS Ic=2MA, Vee =5 V, f= 1 kHz BC 846A... BC 848A - 18 - BC 846 B ... BC 850B _ 30 - BC 847 C ... BC 850 C - 60 - Noise figure F dB Ic =0.2 mA, Vce = 5 V, Rs = 2 kO f= 30 Hz... 15 kHz BC 849 - 1.4 4 BC 850 - 1.4 3 f=1 kHz, 4f=200 Hz BC 849 - 1.2 4 BC 850 - 1.0 4 Equivalent noise voltage Vn - - 0.135 | nV Ic =0.2 mA, Vee =5 V, Rs = 2 kQ f= 10Hz ... 50 Hz BC 850 Semiconductor Group 478SIEMENS BC 846 ... BC 850 Total power dissipation Pia = f (Ta*; Ts) * Package mounted on epoxy BC 846...850 EHPOO360 400 Prot mW 300 \ N \e 200 iN\ \\ 100 \ oO | 0 50 100 *c)~ 150 1k Permissible pulse load Pict max/Piotoc = f (tp) i! a S ee Hi TTI NS ch 0 TINTS, 0 107 1073 1074 107 197 ~s 10 ~ Ip Semiconductor Group Collector-base capacitance Coso = f (Vcx0) Emitter-base capacitance Ceso = {Vexc) 12 BC 846...850 EHPOO3S1 Copy PF 107! 5 10 v.10! > Yeao (Vea0 ) Transition frequency ft = f (/c) Vee = 5 V BC _846...850 EHPOO363 MHz 1 107! 5 10 5 10' ma 102 - kkSIEMENS BC 846 ... BC 850 Collector cutoff current Jca0 = f (Ta) Vea = 30 V 194 Be 13 EHPO0415 0 50 100 C 150 ~ |, DC current gain Are = f (Jc) Vce=5V 103 BC 846...850 ENPOOSES 5 |100 her | 402 5 10! 5 0 10-2, 510-' 510 510 mA 10? |, Semiconductor Group Collector-emitter saturation voltage Ic =f (Vctsa), hre = 20 102 9 846..850 mA 10! 107! 0 Of 02 O03 049705 Veg sal Base-emitter saturation voltage Ic = f (Votsat), hre = 20 102 BC 846...850 EHPOOS64 I, mA | 10! 10 0 O02 04 06 08 Vo 1.2 ~ Vee sat 480SIEMENS BC 846 ... BC 850 h parameter he = f (/c) normalized Vcee=5V EHPOO363 192 2246-850 Noise figure F = f (Vce) Ic = 0.2 mA, Rs = 2 kQ, f= 1 kHz 20 BC B46...850 dB 10 1o-' 510 10! v . ce Semiconductor Group HPOO370 102 h parameter he = f (Vcc) normalized Ie=2MA SC 846...850 EHPOO369 2.0 h =2mA 2e Ite 0.5 Noise figure F = f (/) Ie = 0.2 mA, Vce = 5 V, Rs = 2 kQ BC 846...850 20 EHPaO371 dB 10 107! 10 10' kHz 102 481SIEMENS BC 846 ... BC 850 Noise figure F = f (Ic) Noise figure F = f (Ic) Vee = 5 V, f= 120 Hz Vee =5 V, f= 1 kHz 20 BC 846...850 EHPOO372 20 BC 6846...850 EHPOOS73 d8 dB F F 15 15 10 10 0 10-3 10-2, 407? =~ 10 sma 10! rk Noise figure F = f (Ic) Vee = 5 V, f= 10 kHz BC 846...850 EWPO0374 20 dB 0 10-3 1072-107" = 109 ma 10! oie Semiconductor Group 0 tors 1072 1071 = 10 ma 10! ae 482