2SB1260 - Transys Electronics - Datasheet.Directory

SOT-89 Plastic-Encapsulated Transistors

2SB1260 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM: 0.5 W (Tamb=25℃)

Collector current

ICM: -1 A

Collector-base voltage

V(BR)CBO: -80 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=-50µA , IE=0 -80 V

Collector-emitter breakdown voltage V(BR)CEO I

C= -1mA , IB=0 -80 V

E mitter-base break dow n vol tage V(BR)EBO IE=-50µA, IC=0 -5 V

Collector cut-off current ICBO V

CB=-60 V , IE=0 -1

µA

E mitte r cut-off current IEBO V

EB=-4 V , IC=0 -1

µA

DC current gain hFE VCE=-3V, IC= -0.1A 82 390

Collector-emitter saturation voltage VCE(sat) I

C=-500 mA , IB= -50mA -0.4 V

Transition fre quency f T

VCE= -5V, IC=- 50mA

f = 30MHz 80 MHz

CLA SSIFICATION OF hFE

Rank P Q R

Range 82-180 120-270 180-390

Marking ZL

SOT-89

1. BASE

2. COLLECTO R

3. EMITTER

1 2 3

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