ky SGS-THOMSON MICROELECTRONICS TIP100/101/102 TIP105/106/107 POWER DARLINGTONS DESCRIPTION The TIP100, TIP101 and TIP102 are silicon epi- taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit- ching applications. The complementary PNP types are the TIP105, TIP106 and TIP107 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAMS NPN ~_} Ri Typ. 5KQ PNP s-t036n R2 Typ. 150 KQ R1 Typ. 5 KQ R2 Typ. 150 KQ ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter NPN TiP100 | TIP101 | TIP101/ Unit PNP* | TIP105 | TIP106 | TIP107 VcBo Collector-base Voltage (l- = 0) 60 80 100 Vv VcEo Collector-emitter Voltage (lg = 0) 60 80 100 Vv Veso | Emitter-base Voltage (Ic = 0) 5 v le Collector Current A lou Collector Peak Current 15 A lg Base Current 1 A Prot Total Power Dissipation at Tcase < 25 C 80 WwW Tamb < 25 C 2 Ww Tstg Storage Temperature 65 to 150 C Tj Junction Temperature 150 C * Far PNP types voltage and current values are negative. November 1988 V5 1011. we De SO THERMAL DATA Rth j-case | Thermal Resistance Junction-case Max 1.56 C Rthj-amb | Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specitied) Symbol Parameter Test Conditions Min. Typ. Max. Unit IcEo Collector Cutoff Current for TIP100/105 Vce =30 V 50 HA (lg = 0) for TIP101/106 Vce =40 V 50 pA for TIP102/107 Voce =50V 50 HA Icao Collector Cutoff Current for TIP 100/105 Vceg =60 V 50 HA (le = 0) for TIP101/106 Vcpg =80 V 50 pA for TIP102/107 Vcg =100V 50 pA leBo Emitter Cutoff Current Ven =5V 8 mA (Ic = 0) Vceo(sus)*| Collector-emitter Sustaining | Ic =30 mA Voltage (Ip = 0) for TIP 100/105 60 Vv for TIP101/106 80 Vv for TIP102/107 100 v Vece(sat) | Collector-emitter Saturation lg =3A Ip =G mA 2 Vv Voltage lc =8A tg =80 mA 2.5 v Vee" Base-emitter Voltage Ip =8A Voce =4V 2.8 Vv nee* DC current Gain Ic =3A Voce =4V 1000 Ilo =8A Voce =4V 200 20000 Vet Forward Voltage of Commutation Diode Ip =-Ic =10A 28 v (Ip = 0) * Pulsed : pulse duration = 300 ps, duty cycle < 2%. For PNP types voltage and current values are negative. Safe Oper. le (a) 2/5 ating Areas. (PULSED). OPERATION 1017 TIP 102) 2 abe 2 268 2 10 100 1012 DC Current Gain (NPN types). hee 10 19 107 a he 107 Voge l) 0 Ss- 0 AYf Siepamacreonics Ic fa}TIP100-TIP101-TIP102-TIP105-TIP106- 24 Collector-emitter Saturation Voltage (NPN types). he=250 a 25 5 1B ta) Collector-emitter Saturation Voltage (NPN types). ' , 2 2 Ig (may Small Signal Current Gain (NPN types). Me 10? 107 io? 17 ot 1 t (blz) AY7 Sis omae DC Transconductance (NPN types). Ic ta) 1S 0 1 z 3 pe (Y) Saturated Switching Characteristics (NPN types). t (ps) hpe=250 Vec=30v lei=~!p2 19-4 z . 1 Ip (A) Collector-base Capacitance (PNP types). Ccao (pF) 4 6 8 1 10 Veg () 3/5 1013TIP100-TIP101-TIP102-TIP105-TIP106-TIP107 Small Signal Current Gain (PNP types). ug? fH G7 BO <6 a 88 10 10 0 1 t (MHz) Collector-emitter Saturation Voltage (PNP types). 6- 5713 CE(sat) Tr) 0 25 5 7S Ig (Ad DC Transconductance (PNP types). Collector-emitter Saturation Voltage (PNP types). S712 0 1 2 3 -lg (ma) DC Current Gain (PNP types): hre q s oa 2 a ee 10 1 ~I (a) Saturated Switching Characteristics (PNP types). G- 5795 -l t (a) (ps) 1S 5 1 25 y' 1 2 3 *Vog (YI 1 2 4 8 -I (A) 4/5 (7 SGS-THOMSON TF iucromectnomes 1014TIP100-TIP101-TIP102-TIP105-TIP106-TIP107 Collector-base Capacitance (NPN types). G-5997 cBo (pF) {7 SGS-THOMSON 5/5 7 micnoerzcTRomes 1015