PRELIMINARY DATA
ULTRAFAST MSM PHOTODETECTORS
G4176 SERIES (GaAs)
G7096 SERIES (InGaAs)
Ultrafast response of several tens picosecond
FEATURES
Ultrafast response
G4176-03 : tr , tf = 30 ps (Typ.)
G7096-03 : tr = 40 ps (Typ.)
Low dark current
G4176 series : 100 pA (Ta=25 °C)
Large photosensitive area
200 µm
APPLICATIONS
Optical high-speed waveform measurements
Optical communications
DESCRIPTION
HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses.
The GaAs MSM Photodetector G4176-03 features 30 ps response time for both rise & fall while keeping a low
dark current (100 pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096-03 is 40 ps.
Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than
other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM
Photodetectors are suited for measurements of optical high-speed waveform and optical communications.
There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and
the polarity of an output signal depends on its connection.
Two kinds of packages are prepared for each MSM Photodetector. The package of G4176-03 & G7096-03 is a
coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of
G4176-01 & G7096-01 is a TO-18, which is very common.
An optical fiber or connector input types are available as a custom option. Contact your local representative for
more information.
G4176-03
G7096-03
G4176-01
G7096-01
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2006 Hamamatsu Photonics K.K.
ULTRAFAST MSM PHOTODETECTORS
G4176 SERIES (GaAs)
,
G7096 SERIES (InGaAs)
Symbol
Vb
Φ
Top(a)
Tstg
Unit
V
mW
mW
°C
°C
Symbol
λ
λp
A
Unit
nm
nm
mm2
mm2
Value
450 to 870
850
0.2 0.2
1 1
TO-5
(Unified with SMA connector)
TO-18
Condition
Vb = 7 V
Vb = 7 V
Radiant sensitivity
Dark Current
NEP *3
G4176-03
G4176-01
Terminal Capacitance
G4176-03 *4
G4176-01
Rise Time
G4176-03
G4176-01
Fall Time
G4176-03
G4176-01
S
Id
A/W
pA
Min.
0.2
-
0.2 X 10-15
0.2 X 10-15
-
-
-
-
-
-
λ = 850 nm
Item
Symbol
Condition Value Unit
Typ.
0.3
100
3 X 10-15
4 X 10-15
0.3
0.5
30
50
30
50
Max.
-
300
-
-
0.4
0.6
40
80
40
80
Ct
tr
tf
10 to 90 %
90 to 10 %
λ = 850 nm
W/Hz1/2
pF
ps
ps
Wavelength (nm)
Radiant Sensitivity (A/W)
100
10-1
10-2
10-3
500300 900700600400 1000800
(Vb = 7 V)
G4176 SERIES
(Vb = 7 V)
Output (arb. unit)
Time (0.1 ns/
div
)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1 (Vb = 7 V)
Item
Bias Voltage
Peak Input Light
Operating Temperature
Storage Temperature
ABSOLUTE MAXIMUM RATINGS (Ta=25 °C)
GENERAL CHARACTERISTICS (Ta=25 °C)
Condition
Pulse width
1 ns
Pulse width
1 ns
Value
10
50
5
-40 to +85
-40 to +100
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25
°C
, Vb=7 V)
Item
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G4176-03
G4176-01 *3: Noise Equivalent Power
*4: Value on Chip
Figure 1: Optical Pulse Response
G4176-03
(Including time response of light source, bias-tee and oscilloscope)
G4176-01
(Including time response of light source, assembly circuit and oscilloscope)
Output (arb. unit)
Time (0.1 ns/
div
)
Figure 2: Spectral Response
2010641119
35 78
30
32
34
36
38
40
42
44
46
48
Vb (V)
Rise-time (ps)
Figure 3: Rise Time vs. Applied Voltage (G4176-03)
*1:
Duty ratio should be less than 50 %.(Even if the pulse width is 1 ns, when the duty ratio is >50 %, pulse width > 1ns is applied.)
*2:
This value is under the condition that the light irradiate the whole effective area (200
µ
m ) uniformly.
When the irradiated area is smaller than effective area of the detector, the peak input light becomes smaller in proportional to the irradiate area.
*1 *2
*2
Symbol
λ
λp
A
Unit
nm
nm
mm2
mm2
Value
850 to 1650
1500
0.2 0.2
1 1
TO-5
(Unified with SMA connector)
TO-18
Condition
Vb = 7 V
Vb = 7 V
Radiant sensitivity
Dark Current
NEP *3
G7096-03
G7096-01
Terminal Capacitance
G7096-03 *4
G7096-01
Rise Time
G7096-03
G7096-01
Fall Time
G7096-03
G7096-01
S
Id
A/W
µA
Min.
0.2
-
0.2 X 10-10
0.2 X 10-10
-
-
-
-
-
-
λ = 1.3 µm
Item
Symbol
Condition Value Unit
Typ.
0.4
5
2 X 10-10
3 X 10-10
0.7
0.9
40
60
60
80
Max.
-
20
-
-
0.8
1.0
60
80
100
100
Ct
tr
tf
10 to 90 %
90 to 10 %
λ = 1.3 µm
W/Hz1/2
pF
ps
ps
Wavelength (µm)
Radiant Sensitivity (A/W)
(Vb = 7 V)
G7096 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta=25 °C)
GENERAL CHARACTERISTICS (Ta=25 °C)
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25
°C
, Vb=7 V)
Item
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G7096-03
G7096-01
Figure 4: Optical Pulse Response
G7096-03
(Including time response of light source, bias-tee and oscilloscope)
G7096-01
(Including time response of light source, assembly circuit and oscilloscope)
Figure 5: Spectral Response
100
10-1
10-2
10-3
1.0
0.6 1.8
1.4
1.2
0.8 1.6 2010641119
35 78
30
35
40
45
50
55
60
Vb (V)
Rise-time (ps)
(Vb = 7 V)
Output (arb. unit)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Time (0.1 ns/
div
)
(Vb = 7 V)
Output (arb. unit)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Time (0.1 ns/
div
)
Figure 6: Rise Time vs. Applied Voltage (G7096-03)
Symbol
Vb
Φ
Top(a)
Tstg
Unit
V
mW
mW
°C
°C
Item
Bias Voltage
Peak Input Light
Operating Temperature
Storage Temperature
Condition
Pulse width
1 ns
Pulse width
1 ns
Value
10
10
2
-40 to +85
-40 to +100
*1:
Duty ratio should be less than 50 %.(Even if the pulse width is 1 ns, when the duty ratio is >50 %, pulse width > 1ns is applied.)
*2:
This value is under the condition that the light irradiate the whole effective area (200
µ
m ) uniformly.
When the irradiated area is smaller than effective area of the detector, the peak input light becomes smaller in proportional to the irradiate area.
*1 *2
*2
*3: Noise Equivalent Power
*4: Value on Chip
ULTRAFAST MSM PHOTODETECTORS
G4176 SERIES (GaAs)
,
G7096 SERIES (InGaAs)
1/4-36UNS-2B
9.6
2.03.0
φ7.9
10
φ8.2
2.3
12 min. 3.6
1.2
φ5.4
φ4.7
BIAS / OUTPUT*
OUTPUT / BIAS*
φ0.45LEAD
G4176-03
G7096-03 G4176-01
G7096-01
BIAS-TEE
Optical Input Electric Output
Power Supply
+ (or -)
- (or +)
BIAS CASE
G4176-03
(G7096-03)
G4176-03
G7096-03 G4176-01
G7096-01
Output
DIMENSIONAL OUTLINES (Unit : mm)
(BOTTOM VIEW)
SENSITIVE
SURFACE
CASE
CHIP
OUTPUT/BIAS*
*Both polarities of the bias voltage are available.
(BOTTOM VIEW)
CASE
CHIP
SENSITIVE
SURFACE
+ (or -)
- (or +)
G4176-01
(G7096-01)
Optical Input Electric Output
Power Supply
Coaxial Connector
Case Lead
10 kΩ
100 Ω
10 nF
CONNECTION EXAMPLES
BIAS
Cat. No. LPRD1022E03
JUL. 2006
Printed in Japan
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept.
1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, Shizuoka, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: laser-g@lsr.hpk.co.jp
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de
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