SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)- c IN ORDER OF (1) DISSIPATION 7. SILICON FIELD EFFECT TRANSISTORS - N CHANNEL (2) TYPE No, (2 | 1]MAX.| MAX. [ABS MAX RATINGS@25C MAX. | MAX PARAMETERS @25C [DERATE DWG LC LINE TYPE [DEVICE| Vp __[BVdss |BVgss | lidss @ |igss@ [TEST COND] COMMON SOURCE [r(DS)] MAX. | IN STRUC- |200 E 0 No. No. DISS @ | & Id Ig {Vgs=O&/Vgs>VpiVgs |Vds gfs Yos | on Cis FREE [MAX {TURE | s/a {AD @25C |Id=0 |Vds Vds>Vp)&Vds=0 {mhos) AIR |TEMP T0200/D E w lw tM ow | tia lia | a) tw) Law (MIN | MAX [mhos | my | (Fy) Fwee irc) Ser. 1# TSTZTSN 360m 17.0% 15.0 BOA BGGu ton 10.0 15.0 1800uT 1.5m y4p 72.0 1200 1PL T1018 1B 2# |SI214N 360m [1.5% |5.0 8.04 1.5m 10n {0.0 5.0 goou {2.2m 23p* |2.0 200J |PL TO18 |DBS 3# |SI215N 360m (2.5% |5.0 8.0A 3.0m 10n_ |0.0 5.0 1.3m_|3.0m 23p* |2.0 200J |PL TO18 [DBD 4# |SI216N 360m [3.5% |5.0 8.04 6.0m 10n |0.0 5.0 18m [4.2m 23p* [2.0 200J {PL TO18 [DBA 5 TIXS78 360m 10t | 30 300A 10m| 10m% |2.0n 0.0 30 1.75m |3.0m 100u%/1.5k% |3.0pA 35m | 150J {Pt X55 DB 6 TIXS79 360m 12t {| 30 200A 1Om| t10m% [2.00 0.0 30 = 1.75m (3.0m 100u%12.0k% |3.0pA 35m |/150J |Pt X55 DB 7# |BFX78 375m Al 115A) 254 26m 412 [6.0 9OA 2.7p# [2.5m [175J jDPE*S|TO72 [DS 8 FT57 375m A\ 15A/ 254 26m 0.0 12 |6.0m%|9.0mA 2.7p#* |2.5m |175J DPE*Z|TO72 {DS 9 C673 400m 10 15 40A| 40A 50m|6.0m 10nA |90.0 15 |1.0m_ [2.5m 20u .Opt 2.3m {|200J |E TOS 00 10 C674 400m 10 15 40A| 40A 50m/6.0m 10nA |0.0 15 {1.0m [2.5m 20u 5.0pt 2.3m [200J |E TO18 [DD 11 CMX740t 400m 10 |5.0 30 (1.0 100m|500mA% 10n 2.5 % 2.3m )200J |E TO46 [DDS 12 01101 00m 10 10 254 4.0mA 10n_ |0.0 20 |400u_ |2.0m 2.8kA |2.0p% 2.3m |200J JE TO18 [DBD 13 01102 400m [5.0 10 25A 1.0mA 10n {0.0 20 (300u {1.0m 3.6kA |[2.0pG 2.3m [2005 |E TO18 |DBZ 14 01103 400m }2.5 10 25A 250uA 10n /0.0 20 |200u |1.0m 5.5kA |2.0pS 2.3m )200J |E TO18 |DBZ 15 01177 400m 10 20 SOA 4.0mA_ (5.0n 0.0 20 ([400u [2.0m 2.8kA [2.0p 2.3m (200J (E TO18 [DBS 16 B1178 400m [5.0 20 50A 1.0mA /[5.0n 0.0 20 [300u |1.0m 3.6kA |2.0pS 2.3m |200J jE TO18 [OBS 17 D1179 400m |2.5 20 5OA 250uA |5.0n 0.0 20 |200u |1.0m 5.5kA |2.0pS 2.3m |200J |E TO18 |DBS 18 01180 400m 10 20 50A 10mA_(5.0n 0.0 20 |1.0m_|4.0m L1kA |[3.5p% 2.3m |200J |E TO18 [DBZ 19 D1181 400m [5.0 20 50A 2.5mA |5.0n 0.0 20 = 1750u |2.5m 1.5kA [3.5pd 2.3m /200J |E TO18 [DBS 20 D1182 400m [2.5 20 50A 600uA |5.0n 0.0 20 |500u {2.5m 2.5kA |3.5pD 2.3m |200J JE TO18 [DBS 21 01183 400m (8.0 20 50A 15m 5.0n 0.0 20 |2.5m 10m 6.0p@ 200S5 |E TO18 |DB 22 01184 400m [4.0 20 50A 4.0m 5.0n 0.0 20 [1.5m j6.0m 6.0pS 200J |E TO18 |DBd 23 01185 400m |2.0 20 5OA 1.0m 5.0n 0.0 20 |.80m |4.5m 6.0pD 200J |E TO18 |DBD 24 01201 400m 10 10 25A 1OmA 10n_ |0.0 20 11.0m_ (4.0m 1L.1kA ([5.0p@ [2.3m |200J |E TO18 (DBZ 25 B1I202 400m 15.0 10 25A 2.5mA On 0.0 20 j600u |2.5m T8kA |5.0pe 2.3m [200J |E TO18 [DBS 26 01203 400m [2.5 10 25A 600uA 10n (0.0 20 |300u |2.5m 3.6kA |5.0pd 2.3m )200J |E TO18 [DBZ 27 Db1301 400m _|8.0 10 25A 15m 10n_|0.0 20 |2.5m 10m 6.0pS 200J |E T918 |DB 28 01302 400m |4.0 10 25A 4.0m 10n {0.0 20 (1.5m |6.0m 6.0pS 200J |E TO18 [DBZ 29 D1303 400m |2.0 10 25A 1.0m 10n |0.0 20 |.80m |4.5m 6.0pD 200J |E TO18 |DBS 30 01420 400m |4.0 10 25A 5.0mA_ |1.0n 0.0 20 = |1.0m 5.0pd 2.3m_}200J |N-E TO18 |DBS 31 01421 400m |6.0 10 254 yOmA |1.0n 0.0 20 |2.0m 6.0pe 2.3m |200J |N-E TO18 (DBZ 32 01422 400m 10 10 25h 15mA |5.0n 0.0 20 |1.0m 5.0pS 2.3m |200J |N-E TO18 |DBY 33 ON3O66A 400m 10 30 50A 4.0mA_ {1.0n 0.0 30 |.40m 1.0m 10p# |2.3m |200J |N-E TOI |OB 34 ON3067A 400m [5.0 30 50A 1.0mA /1.0n 0.0 30 = [.30m 1.0m 1Op# [2.3m /200J |N-E TOTS (OBZ 35 DON3O68A 400m [2.5 30 50A .25mA [1.0n 0.0 30 |.20m 1.0m 10p# [2.3m |200J |N-E TO18 |DBD 36 DN3069A 400m 10 30 50A 10mA |1.0n 0.0 30 [1.0m |2.5m 5p# [2.3m |200J |N-E TO18 [DBD 37 DN3070A 400m [5.0 30 5OA 2.5mA }1.0n 0.0 30 |.75m |2.5m T5p# [2.3m |200J [N-E TO18 |OBZ 38 BN3071A 400m |2.5 30 5O0A 6O0mA |1.0n 0.0 3b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)IN ORDER OF (1) CATEGORY & (2) TYPE No. 13. MISCELLANEOUS TRANSISTORS 12 1|CATEGORY | MIDWG #/L C LINE TYPE UISTRUC- A|Y200 IE 0 DESCRIPTION No. No. S| TURE T| s/a AD E T0200 (DE Ser. SA2738* 6IN Si |L2t Pt.6W:hFET7/2-.90 min:VBE(1-2)-1.5mV max;AVBE(1-2)/AT-auV/deg.C. 2 |SA2739* 6IN Si jL2t Pt.6W-hFE1/2-.90 min;VBE(1-2)-2.5mV max;AVBE(1-2)/AT-5uV/deg.C. 3 |SD5010* 6 |P-MOS| Si_{L53 Pt 325mW(each side) at 25C Case temp.yfs_ 1/2 800m min;VGS(1-2) 70mv. 4 D5011* 6 /P-MOSI Si jL54 Pt 325mW(each side) at 25C Case temp:yfs 1/2 800m min;VGS(1-2) 70mV. 5 $D5012* 6 |P-MOSZ Si |L53 Pt 325mW(each side) at 25C Case tempiyfs 1/2 800m min:VGS(1-2) 70mvV. 6 _|SD5013* 6 (P-MOS Si_|L54 Pt 325mWieach side} at 25C Case tempiyfs_1/2 800m min,VGS(1-2) 70mv. 7 (jSDS014* 6 |/P-MOS' Si [L53 Pt-325mWi(each side) at 25C case temp.yfs 1/2 .8Omin;VGS 1/2-200mV max. 8 |SD5015* 6|P-MOSd /Si |L54 Pt-325mW(each side) at 25C case temp:yfs 1/2 .8Omin:VGS 1/2-200mV max. g jSD050* 6IN-MOSZ [Si _|L53 Pt-325mWieach side) at 25C casetempiyfs 1/2 .80min;VGS 1/2-200mV_ max. 10 SD505 1* 6IN-MOSIA [Si [L54 Pt-325mWieach side) at 25C case temp:yfs 1/2 .8Omin;VGS 1/2-200mV max. 11# |SL360 6 |NPN Si |L44a BVCBO 15V min;BVCEO 8V min:hFE 30 min:VCE(sat) 400mV max;ic 10uA. 12. |SMT100 6 IP Si |Li7a BVCEO-45V:IC-30mA max:Pt-.6OW:VBE(1-2}-20mV;Cob-6.Opf. 13. [SMT101 6iP Si [L17a BVCEO-45V;IC-30mA max;Pt-.60W;VBE(1-2)-20mV;Cob-6.0pf. 14 |SMT102 6 iP Si |L17a BVCEO-45V;IC-30mA max;Pt-.6OW;VBE(1-2)-10mV:hFE 1/hFE2-.80 min. 15 |SMT103 6/P Si [L17a BVCEO-45ViIC-30mA_max;Pt-.6OW;VBE(1-2)-1OmVhFE 1/hFE2-.80 min. 16 {SMT104 6(P Si [L17a BVCEO-45V:IC-30mA max;Pt-.6OW;VBE(1-2)-5.OmV;hFE 1/hFE2-.90 min. 17) |SMT105 6|P Si |L17a BVCEO-45V.IC-30mA max;Pt-.60W;VBE{1-2)-5.OmV:hFE 1/hFE2-.80 min. 18 |SP8300 6 IN-PL Si_|L8a Pc-. 30W;BVCBO-40V;hFE-30_ min/IC-10mAJCBO-.O25uA max. 19 |/SP8302 6 (N-PL Si /L8a Pc- SOW:BVCBO-100V:hFE-75 min/IC-10mA;ICBO-.025mA max. 20 |SP8303 6 |N-PL Si |L8a Pc-. SOW:BVCBO-1tO00V;hFE-35 min/IC-10mA;ICBO-.025mA max. 21 SP8304 6 |N-PL Si jL8a Pc-. 30W;BVCBO-40V;hFE-30 min/IC-10mA;ICBO-.025uA max. 22 |SP8307 6 |P-PL Si /L8a Pc-.30W;BVCBO-20V;hFE-35 min/IC-10mA;ICBO-.01uA max. 23 ~|SP8309 6 |N-PL Si |L8a Pc-.5O0W;BVCBO-75V;hFE-40 min/IC-150mA;ICBO-.01uA max. 24 _\SP8310 6 |N-PLO Si (L8a Pc- SOW; BVCBO-75V:hFE-100 min/IC- 15OmAICBO-.01uA max. 25 =[SP8311 6 |N-PL Si |L8a Pc-.5OW;BVCBO-120V;hFE-40 min/IC-150mA;ICBO-.01uA max. 26 (SP10801 6 JN-DPL Si |TO89 hFE1/hFE2-0.8minA VBE1-VBE2-1.6mV max,NF-4.0db max 27__|SP10810 6 |P-DPE Si_|TO89 hFE1/hFE2-0,.8minA VBE1-VBE2-4.0mV_max,hFE-35min at 10mA-1.0V. 28 = |SU2074* 6IN Si [L21 Pt-300mW; gm1/2-.95 min:VGS(1-2)-15mV max;AVGS(1-2)/AT-10uV/Deg.C. 29 |SU2075* 6\N Si |L21 Pt-300mW; gm1/2-.95 min; VGS(1-2)-15mV_ max;AVGS(1-2)/AT-15uV/Deg.C. 30__ |SU2076* 6 IN Si_|L21 Pt-250mW; gm1/2..95 min; VGS(1-2)-15mV_max;AVGS(1-2)/AT-10uV/Deg.C. 1 $U2077* 6 iN Si (121 Pt-250mW; gm1/2-.95 min;VGS(1-2)-15mV max;AVGS(1-2)/AT-25uV/Deg.C. 32 |$U2078* 6 IN Si |L21 Pt-250mW:gm 1/2-.95min;VGS(1-2)-15mV_ max:AVGS(1-2)/AT-35uV/Deg. C. 33___ |[SU2079* 6 IN Si_|t21 Pt-250mW; gm1/2-.95 min:VGS(1-2)-15mV_max:AVGS(1-2)/AT-60uV/Deg.C. 34# |TA-M93 6 NPN TOS Dual 2N930;10% hFE match;5.0mV VBE match;hFE at 10uA-50 min. 35 |U205* 6IN Si |TO71 Pt-.30W:!G(1-2)-5.0nA max;VGS(1-2)-5.OmV max:gfs1/2-.95 min. 36 |U206* 6IN Si |TO71 Pt. 3OWIG(1-2)-5.OnA max;VGS(1-2)-10mV_maxigfs1/2-.95 min. 37 [U207* 6/N Si |/TO71 Pt-. 30W;IG(1-2)-5.0nA max;VGS(1-2)-15mV maxigfs1/2-.95 min. 38 /|UD1000 6 |P-PE Si |L38 Pt(Both Sides)-200mW;BVCBO-50V;Vo(1-2)-100uV max:IB and IC-20mA. 39 |UD2000 6 |P-PE Si_|L2n Pt-400mW,BVCBO-50V;VBE1/2-5mV_max:hFE1/2-.90 min: AVBE1-2-10uV/degC 40 |JAN1N4378 7 INA Si [X69 Pt-SOmW;ID-10nAmax;IL-9.0mAmax;tr-1.5uSmax;VCE-50V:VEC-8V. 41 2N318 7 |P-A Ge Pc-SOmW; VCE-12V max; Sens.-25uA/ft can;fab-750kc. 42 |2N577 7|P Ge Pt-25mW; IC-10mA; I