SD101A (1N6263) ... SD101C Silicon Schottky Barrier Diodes for general purpose applications The SD101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. The $D101A is equivalent to the 1N6263. This diode is also available in MiniMELF case with type designation LL101A, B, C. These diodes are delivered taped. Details see Taping. Absoiute Maximum Ratings (T, = 25 C) a max. 1.98 | ye 3.9 }* min. 27.5 max Cathode Mark in White ~ ms Hl 1 max. 0.520 Glass case JEDEC DO-35 54 A 2 according to DIN 41880 Weight approx. 0.13g Dimensions in mm Symbol Value Unit Peak Reverse Voltage SD101A Vern 60 V SD101B Venu 50 Vv $D101C Venn 40 Vv Power Dissipation at T,_,, = 25 C Prot 400 mW Max. Single Cycle Surge FSM 2 A 10 s Squarewave Junction Temperature T, 200 C Storage Temperature Range Ts -55 to + 200 C 1) Valid provided that leads direct at the case are kept at ambient temperature SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )SD101A (1N6263) ... SD101C Characteristics at T,, =25 C Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage atl, =10pA SD101A Vern 60 - - Vv $D101B Vern 50 - - V $D101C (eA)R 40 - - Vv Leakage Current atV, =50V SD101A I, - - 200 nA atV,=40V $D101B I, - - 200 nA atV, = 30V $D101C I, - - 200 nA Forward Voltage Drop atl.=1mA SD101A Vv. - - 0.41 Vv $D101B Vv. - - 0.4 Vv SD101C Ve - - 0.39 Vv atl. =15mA SD101A Vv, - - 1 Vv $D101B Vv, - - 0.95 Vv $D101C V. - - 0.9 Vv Junction Capacitance atV,=0V,f =1MHz SD101A C. - - 2.0" pF $D101B Ca - - 2.1 pF $D101C Coo - - 2.2 pF Reverse Recovery Time t, - - 1 ns at |. = |, = 5 mA, recover to 0.1 I, 1) JEDEC limit specification on capacitance for 1N6263 is 2.2 pF. Typical variation of fwd. current vs. fwd. voltage for primary conduction through the Schottky barrier mA $D101 10 A 5 B Cc 0.01 0 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring no SD101 A B 80 c I s Il | I | . I SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )SD101A (1N6263) ... SD101C Typical variation of reverse current at various temperatures pA SD101 150C 425 100 75 50 25C 0.01 Typical capacitance curve as a function of reverse voltage pF $D101 2 j= 0 10 20 30 40 50V SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )