ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, -- excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP 60-80 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIIIIII III IIII IIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII *MAXIMUM RATINGS Rating Symbol 2N5194 2N5195 Unit VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 320 Watts mW/C TJ, Tstg -65 to +150 C/W Symbol Max Unit JC 3.12 C/W Collector-Emitter Voltage Operating and Storage Junction Temperature Range 3 2 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-09 TO-225AA TYPE *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 -- -- -- -- 1.0 1.0 -- -- -- -- 0.1 0.1 2.0 2.0 -- -- 0.1 0.1 -- 1.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N5194 2N5195 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5194 2N5195 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N5194 2N5195 2N5194 2N5195 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5194 2N5195 Vdc ICEO mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 10 1 Publication Order Number: 2N5194/D 2N5194 2N5195 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III *ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 25 20 10 7.0 100 80 -- -- -- -- 0.6 1.4 Unit ON CHARACTERISTICS DC Current Gain (2) (IC = 1.5 Adc, VCE = 2.0 Vdc) hFE -- 2N5194 2N5195 2N5194 2N5195 (IC = 4.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (2) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Vdc Base-Emitter On Voltage (2) (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.2 Vdc fT 2.0 -- MHz DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. hFE , DC CURRENT GAIN (NORMALIZED) 10 7.0 5.0 TJ = 150C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 25C -55C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 4.0 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 TJ = 25C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 Figure 2. Collector Saturation Region http://onsemi.com 2 30 50 70 100 200 300 500 2.0 TJ = 25C 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 103 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (A) 10-1 REVERSE FORWARD 25C 10-2 +1.0 +0.5 *VC for VCE(sat) 0 -0.5 -1.0 VB for VBE -1.5 -2.0 -2.5 0.005 0.01 0.020.03 0.05 10-3 +0.4 +0.3 +0.2 +0.1 ICES 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) TURN-ON PULSE VCC Vin t1 t2 Vin APPROX -11 V 1.0 2.0 3.0 4.0 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES 104 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 103 102 20 t3 TURN-OFF PULSE 60 80 100 120 140 160 500 TJ = 25C SCOPE 300 Cjd<<Ceb APPROX +9.0 V 40 Figure 6. Effects of Base-Emitter Resistance RC RB IC ICES TJ, JUNCTION TEMPERATURE (C) CAPACITANCE (pF) APPROX -11 V 0.2 0.3 0.5 107 Figure 5. Collector Cut-Off Region VBE(off) Vin 0 0.1 Figure 4. Temperature Coefficients 100C 100 +1.5 IC, COLLECTOR CURRENT (AMP) TJ = 150C 101 *APPLIES FOR IC/IB hFE @ VCE TJ = -65C to +150C +2.0 Figure 3. "On" Voltage VCE = 30 Vdc 102 +2.5 IC, COLLECTOR CURRENT (AMP) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) VOLTAGE (VOLTS) 1.6 V, TEMPERATURE COEFFICIENTS (mV/C) 2N5194 2N5195 +4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 200 Ceb 100 Ccb 70 t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% 50 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Switching Time Equivalent Test Circuit Figure 8. Capacitance http://onsemi.com 3 10 20 30 40 2N5194 2N5195 2.0 2.0 IC/IB = 10 TJ = 25C 1.0 0.7 0.5 tr @ VCC = 30 V t, TIME (s) t, TIME (s) 0.7 0.5 0.3 0.2 tr @ VCC = 10 V 0.1 0.07 0.05 2.0 tf @ VCC = 30 V 0.3 0.2 0.1 0.07 0.05 td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.5 0.7 1.0 0.05 0.07 0.1 IC, COLLECTOR CURRENT (AMP) IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C ts 1.0 tf @ VCC = 10 V 0.03 0.02 0.05 0.07 0.1 3.0 4.0 Figure 9. Turn-On Time 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 Figure 10. Turn-Off Time Note 1: 10 IC, COLLECTOR CURRENT (AMP) 5.0 100 s TJ = 150C 2.0 1.0 There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150C. T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. At high-case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms 5.0 ms dc SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 0.5 0.2 2N5194 0.1 1.0 2N5195 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 11. Rating and Thermal Data Active-Region Safe Operating Area 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 JC(max) = 3.12C/W 0.1 0.05 0.02 SINGLE PULSE 0.02 0.03 0.01 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 12. Thermal Response http://onsemi.com 4 20 30 50 100 200 300 500 1000 2N5194 2N5195 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure 13. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find JC(t), multiply the value obtained from Figure 12 by the steady state value JC. Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f = Figure 13. T = r(t) x PP x JC = 0.27 x 50 x 3.12 = 42.2C http://onsemi.com 5 2N5194 2N5195 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- 2N5194 2N5195 Notes http://onsemi.com 7 2N5194 2N5195 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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