y 2N3962 S F PNP - SILICON TRANSISTOR DESCRIPTION 70-18 2N3962 is PNP _ silicon lanar transistor designed for AF small signal fi amplifier stages. CBE ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VCEO 60V Collector-Base Voltage VCBO 60V Emitter-Base Voltage VEBO 6V Collector Current Ic 200mA Continuous Power Dissipation Pd 360mW Operating & Storage Junction Temperature Tj. Tstg -55 to + 150C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL | MIN MAX] UNIT CONDITIONS Collector-Emitter Breakdown Voltage | LVCEO 60 Vo jIc=5mA IB=0 Collector-Base Breakdown Voltage BVCBO 60 Vo jIC=10pA IE=0 Emtter-Base Breakdown Voltage BVEBO 6 V |TE=10pA IC=0 Collector Cutoff Current ICES 10 nA |VCE=50V VEB=0 Emitter Cutoff Current IEBO 10 nA |VEB=4V IC=0 D.C. Current Gain HFE 60 IC=0.00lmA VCE=5V 100 300 IC=0.0imA VCE=5V 100 450 IC=1mA VCE=S5V 90 IC=50mA VCE=5V Collector-Emitter Saturation Voltage VCE(sat) 0.25 V |jIC=10mA IB=0.5mA 0.4 V|IC=S50mA IB=SmA Base-Emitter Saturation Voltage VBE(sat) 0.95 VjIC=50mA IB=5mA Output Capacitance Cob 6 pF |VCB=10V f=1MHz Noise Figure NF 3 dB |IC=0.02mA VCE=5V REB = 10Kohmf= 1kHz * Pulse test : pulse width <300uS, duty cycle < 2%. MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. Kwun Tong P.O. Box 69477 Hong Kong. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5 Sep-96