May 2001
QFETTM
FQP50N06L
©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001
FQP50N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V
Low gate charge ( typical 24.5 nC)
Low Crss ( typical 90 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQP50N06L Units
VDSS Drain-Source Voltage 60 V
IDDrain Current - Continuous (TC = 25°C) 52.4 A
- Continuous (TC = 100°C) 37.1 A
IDM Drain Current - Pulsed (Note 1) 210 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ
IAR Avalanche Current (Note 1) 52.4 A
EAR Repetitive Avalanche Energy (Note 1) 12.1 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PDPower Dissipation (TC = 25°C) 121 W
- Derate above 25°C 0.81 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 1.24 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
!"
!
!
!"
"
"
!"
!
!
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"
"
S
D
G
TO-220
FQP S er ies
GS
D
FQP50N06L
Rev. A1. May 2001©2001 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 300µH, IAS = 52.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 52.4A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA60 -- -- V
BVDSS
/ TJ
Breakdown Vo ltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA1.0 -- 2.5 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 26.2 A
VGS = 5 V, ID =26.2 A --
-- 0.017
0.020 0.021
0.025
gFS Forward Transconductance VDS = 25 V, ID = 26.2 A -- 40 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1250 1630 pF
Coss Output Capacitance -- 445 580 pF
Crss Reverse Transfer Capacit ance -- 90 120 pF
Switching Characteristics
td(on) Turn-On Delay T ime VDD = 30 V, ID = 26.2 A,
RG = 25
-- 20 50 ns
trTurn-On Rise Time -- 380 770 ns
td(off) Turn-Off Del a y Time -- 80 170 ns
tfTurn-Off Fa ll Time -- 1 4 5 300 n s
QgTotal Gate Ch arge VDS = 48 V, ID = 52.4 A,
VGS = 5 V
-- 24.5 32 nC
Qgs Gate-Source Charge -- 6 -- nC
Qgd Gate-Drain Charge -- 14.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 210 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 52.4 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 52.4 A,
dIF / dt = 100 A/µs
-- 65 -- ns
Qrr Reverse Recovery Charge -- 125 -- nC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
FQP50N06L
©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001
0 1020304050
0
2
4
6
8
10
12
VDS = 30V
VDS = 48V
! N ote : I D = 52.4A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
0
1000
2000
3000
4000 Ciss = C gs + Cgd (C ds = shorted)
Coss = Cds + Cgd
Crss = C gd
! Notes :
1. V GS = 0 V
2. f = 1 M Hz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
101
102
175"! No tes :
1. V GS = 0V
2. 2 5 0#s P ulse Test
25"
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
VGS = 10V
VGS = 5V
! Note : T J = 25"
RDS(ON) [m$],
Drain-Source On-Resistance
ID, Drain Current [A]
0246810
100
101
102
175"
25"
-55"
! No te s :
1. V DS = 25V
2. 2 5 0#s P ulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
10-1 100101
100
101
102
VGS
T o p : 10 .0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
B o ttom : 3.0 V
! No te s :
1. 2 5 0#s P ulse Test
2. T C = 25"
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitanc e C haracterist i cs Figure 6. Gate Charge C haracteris tics
Figu re 3. On-R esistan ce Variation vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ic s
FQP50N06L
©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
! Notes :
1. Z %JC(t ) = 1 .2 4 "/W Max.
2. D u ty Fac to r , D =t1/t2
3. T JM - T C = P DM * Z %JC
(t)
s ingle pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z%JC
(t), Therm al Response
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
ID, Drain Current [A]
TC, Case Temperature ["]
10-1 100101102
100
101
102
103
DC
10 ms
1 ms
100 µs
Operation in This Area
is Lim ited by R DS(on)
! Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
! Note s :
1. VGS = 10 V
2. ID = 26.2 A
RDS(ON) , (N o rmalize d )
D rain-So urce O n-Resistance
TJ, Junction T em p erature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
!
Notes :
1 . VGS = 0 V
2 . ID = 250 #A
BV DSS , (Norm alized)
D rain-Source Breakdown Voltage
TJ, Junction Tem perature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdown Voltag e Variation
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Tr ansient Thermal Res pons e Cur ve
t1
PDM
t2
FQP50N06L
©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001
Gate Charge Test Circuit & Waveform
Resist iv e Sw itc h ing Tes t Ci rcuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
VGS
5V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
Charge
VGS
5V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
5V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
5V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
FQP50N06L
©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001
Peak Diode Recove ry dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Typ e
as DUT
VGS dv/dt controlled by RG
•I
SD con trolled by pulse per iod
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Typ e
as DUT
VGS dv/dt controlled by RG
•I
SD con trolled by pulse per iod
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
FQP50N06L
©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
©2001 Fairchild Semiconductor Corporation Rev. H2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all su ch trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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