Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
DN2540
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
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General Description
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
Device Package Options BVDSX/BVDGX
(V)
RDS(ON)
(max)
(Ω)
IDSS
(min)
(mA)
TO-92 TO-220 TO-243AA (SOT-89)
DN2540 DN2540N3-G DN2540N5-G DN2540N8-G 400 25 150
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSX
Drain-to-gate voltage BVDGX
Gate-to-source voltage ±20V
Operating and storage
temperature -55OC to +150OC
Soldering temperature* 300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configurations
TO-243AA (SOT-89) (N8)
TO-220 (N5)
TO-92 (N3)