1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an
integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small
plastic package.
1.2 Features
Forward current: 0.5 A
Reverse voltage: 20 V
Ultra low forward voltage
Leadless ultra small plastic package
Power dissipation comparable to SOT23
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Low voltage rectification
High efficiency DC-to-DC conve rs ion
Low power consumption applications
1.4 Quick reference data
PMEG2005AEL
0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless
ultra small SOD882 package
Rev. 03 — 15 January 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Value Unit
IFforward current 0.5 A
VRreverse voltage 20 V
PMEG2005AEL_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 2 of 8
NXP Semiconductors PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Discrete pinning
Pin Description Simplified outline Symbol
1 cathode [1]
2 anode
001aaa332
Bottom view
Top view
21
sym00
1
12
Table 3. Ordering information
Type number Package
Name Description Version
PMEG2005AEL - leadless ultra small plastic package; 2 terminals;
body 1.0 ×0.6 ×0.5 mm SOD882
Table 4. Marking
Type number Marking code
PMEG2005AEL F2
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRcontinuous reverse voltage - 20 V
IFcontinuous forward current - 0.5 A
IFRM repetitive peak forward current tp≤1 ms; δ≤0.25 - 2.5 A
IFSM non-repetitive peak forward
current t = 8 ms square
wave -3A
Tjjunction temperature [1] - 150 °C
Tamb operating ambient temperature [1] −65 +150 °C
Tstg storage temperature −65 +150 °C
PMEG2005AEL_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 3 of 8
NXP Semiconductors PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
6. Thermal characteristics
[1] Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
7. Characteristics
[1] Pulse test: tp≤300 μs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-a) thermal resistance from junction to
ambient in free air [1][2] 500 K/W
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Typ Max Unit
VFcontinuous forward
voltage see Figure 1;
IF= 0.1 mA 25 60 mV
IF=1mA 75 110 mV
IF= 10 mA 135 190 mV
IF= 100 mA 220 290 mV
IF= 500 mA 375 440 mV
IRcontinuous reverse
current see Figure 2;[1]
VR= 10 V 210 600 μA
VR= 20 V 370 1500 μA
Cddiode capacitance VR= 1 V; f = 1 MHz;
see Figure 3 19 25 pF
PMEG2005AEL_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 4 of 8
NXP Semiconductors PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
(1) Tj= 150 °C
(2) Tj= 125 °C
(3) Tj=85°C
(4) Tj=25°C
(1) Tj= 150 °C
(2) Tj= 125 °C
(3) Tj=85°C
(4) Tj=25°C
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Reverse current as a function of reverse
voltage; typical values
Tamb =25°C; f = 1 MHz
Fig 3. Diod e capacitance as a function of reverse voltage; typical values
001aaa342
1
10
102
103
IF
(mA)
10−1
VF (V)
0 0.40.30.1 0.2
(1) (2) (3) (4)
001aaa343
1
10−1
102
10
103
IR
(mA)
10−2
VR (V)
02015510
(1)
(2)
(3)
(4)
VR (V)
02015510
001aaa344
20
10
30
40
Cd
(pF)
0
PMEG2005AEL_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 5 of 8
NXP Semiconductors PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
8. Package outline
Fig 4. Package outline
UNIT A1
max.
A(1) be
1L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46
0.55
0.47
0.03 0.62
0.55 0.65
DIMENSIONS (mm are the original dimensions)
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
0.30
0.22
SOD882 03-04-16
03-04-17
DE
1.02
0.95
L
E
(2)
2
1b
A1
A
D
L
L
eadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD88
2
0 0.5 1 mm
scale
e1
PMEG2005AEL_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 6 of 8
NXP Semiconductors PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
9. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMEG2005AEL_3 20100115 Product data - PMEG2005AEL_2
Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PMEG2005AEL_2 20040427 Product data - PMEG2005AEL_1
PMEG2005AEL_1 20040419 Product data - -
PMEG2005AEL_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 7 of 8
NXP Semiconductors PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre va il.
10.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 601 34) may cause pe rmanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Char acteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
10.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specif ication for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PMEG2005AEL
0.5 A ultra low VF MEGA Schottky rectifier
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 January 2010
Document identifier: PMEG2005AEL_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11 Contact information. . . . . . . . . . . . . . . . . . . . . . 7
12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
