CGHV27200F - Cree Inc. - Datasheet.Directory

Subject to change without notice.

www.cree.com/rf

CGHV27100

100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

is designed specically for high efciency, high gain and wide bandwidth capabilities,

which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA

amplier applications. The transistor is input matched and supplied in a ceramic/

metal pill and ange packages.

Package Type: 440162 and 440161

PN: CGHV27100F and CGHV27100P

Rev 1.0 – May 2015

Features

• 2.5 - 2.7 GHz Operation

• 18.0 dB Gain

• -37 dBc ACLR at 25 W PAVE

• 33 % Efciency at 25 W PAVE

• High Degree of DPD Correction Can be Applied

Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplier

Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units

Gain @ 44 dBm 18.1 18.0 17.9 dB

ACLR @ 44 dBm -37.0 -37.0 -37.0 dBc

Drain Efciency @ 44 dBm 34.0 33.5 32.0 %

Note:

Measured in the CGHV27100-AMP amplier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,

PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 500 mA.

2CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 125 Volts 25˚C

Gate-to-Source Voltage VGS -10, +2 Volts 25˚C

Storage Temperature TSTG -65, +150 ˚C

Operating Junction Temperature TJ225 ˚C

Maximum Forward Gate Current IGMAX 16 mA 25˚C

Maximum Drain Current1IDMAX 6 A 25˚C

Soldering Temperature2TS245 ˚C

Screw Torque τ80 in-oz

Thermal Resistance, Junction to Case3RθJC 2.34 ˚C/W 85˚C, PDISS = 48 W

Thermal Resistance, Junction to Case4RθJC 2.95 ˚C/W 85˚C, PDISS = 48 W

Case Operating Temperature5TC-40, +150 ˚C

Note:

1 Current limit for long term, reliable operation.

2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library

3 Measured for the CGHV27100P

4 Measured for the CGHV27100F

5 See also, the Power Dissipation De-rating Curve on Page 5.

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 16 mA

Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 50 V, ID = 500 mA

Saturated Drain Current2IDS 12 14.4 –AVDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 16 mA

RF Characteristics5 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)

Saturated Output Power3,4 PSAT –135 –WVDD = 50 V, IDQ = 500 mA

Pulsed Drain Efciency3,4 η–68 –%VDD = 50 V, IDQ = 500 mA, POUT = PSAT

Gain6G – 18 – dB VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm

WCDMA Linearity6ACLR –-37 –dBc VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm

Drain Efciency6η–33 –%VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm

Output Mismatch Stress3VSWR – – 10 : 1 YNo damage at all phase angles, VDD = 50 V, IDQ =

500 mA, POUT = 100 W Pulsed

Dynamic Characteristics

Input Capacitance7CGS –66 –pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Output Capacitance7CDS –8.7 –pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance CGD –0.47 –pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Notes:

1 Measured on wafer prior to packaging.

2 Scaled from PCM data.

3 Pulse Width = 100 µs, Duty Cycle = 10%

4 PSAT is dened as IGS = 1.6 mA peak

5 Measured in CGHV27100-AMP

6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V.

7 Includes package and internal matching components.

3CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Typical Performance

Figure 1. - Small Signal Gain and Return Losses vs Frequency for the

CGHV27100 measured in CGHV27100-AMP Amplier Circuit

VDD = 50 V, IDQ = 0.5 A

Typical Linear Performance

Figure 2. - Typical Gain, Drain Efciency and ACLR vs Output Power

of the CGHV27100 measured in CGHV27100-AMP Amplier Circuit

VDS = 50 V, IDS = 0.5 A, 1c WCDMA, PAR = 7.5 dB

Magnitude (dB)

-20

-15

-10

-5

2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0

Magnitude (dB)

Frequency (GHz)

S11

S21

S22

-25

-20

-15

-10

-5

Drain Efficiency (%) & Gain (dB)

ACLR (dBc)

2.5GHz ACPR

2.6GHz ACPR

2.7GHz ACPR

2.5GHz Drain Efficiency

2.6GHz Drain Efficiency

2.7GHz Drain Efficiency

2.5GHz Gain

2.6GHz Gain

2.7GHz Gain

-50

-45

-40

-35

28 30 32 34 36 38 40 42 44 46 48

Drain Efficiency (%) & Gain (dB)

Output Power (dBm)

4CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Typical Performance

Figure 3. - Typical Gain, Drain Efciency and ACLR vs Frequency

of the CGHV27100 measured in CGHV27100-AMP Amplier Circuit.

VDS = 50 V, IDS = 0.5 A, PAVE = 25 W, 1c WCDMA, PAR = 7.5 dB

Figure 4. - Typical Two Tone Linearity vs Output Power of the CGHV27100

measured in CGHV27100-AMP1 Amplier Circuit. VDS = 50 V, IDS = 0.5 A

-35

-34

-33

-32

-31

-30

ACLR (dBc)

Gain (dB) & Drain Efficiency (%)

-40

-39

-38

-37

2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80

Gain (dB) & Drain Efficiency (%)

Frequency (GHz)

Gain

Drain Efficiency

ACLR

-40

-30

-20

-10

Intermodulation Distortion (dBc)

CGHV27100F IMD Sweep

-80

-70

-60

-50

20 25 30 35 40 45

Intermodulation Distortion (dBc)

Output Power (dBm)

-IMD3

+IMD3

-IMD5

+IMD5

-IMD7

+IMD7

5CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Typical Performance

Figure 5. - Power Dissipation Derating Curve

Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).

Source and Load Impedances

Frequency (MHz) Z Source Z Load

2500 4.01 - j3.88 10.69 - j2.86

2600 3.99 - j3.29 11.16 - j3.17

2700 4.01 - j2.72 11.67 - j3.94

Note1: VDD = 50 V, IDQ = 500 mA. In the 440162 package.

Note2: Impedances are extracted from CGHV27100-AMP demonstration circuit

and are not source and load pull data derived from transistor.

Z Source Z Load

Power Dissipation (W)

440161 Package

440162 Package

0 25 50 75 100 125 150 175 200 225 250

Power Dissipation (W)

Maximum Case Temperature ( C)

Note 1

6CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV27100-AMP Demonstration Amplier Circuit Bill of Materials

Designator Description Qty

R1, R2 RES, 10 OHM, +/- 1%, 1/16 W, 0603 2

C1 CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC 1

C2 CAP, 27 pF, +/-5%, 0603, ATC 1

C3 CAP, 10.0 pF, +/-5%, 0603, ATC 1

C8, C13 CAP, 8.2 pF, +/-0.25 pF, 0603, ATC 2

C4, C9, C14 CAP, 470 pF, 5%, 100 V, 0603, X 3

C5, C10, C15 CAP, 33000 pF, 0805, 100 V, X7R 3

C6 CAP, 10 UF, 16 V, TANTALUM 1

C7 CAP, 27 pF, +/-5%, 250 V, 0805, ATC 600 F 1

C11, C16 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 2

C12 CAP, 100 UF, +/-20%, 160 V, ELECTROLYTIC 1

C17 CAP, 33 UF, 20%, ELECTROLYTIC 1

J1, J2 CONN, SMA 2

J3 HEADER RT>PLZ.1CEN LK 9POS 1

PCB, RO4350, 0.020” THK, CGHV27100F 1

2-56 SOC HD SCREW 1/4 SS 4

#2 SPLIT LOCKWASHER SS 4

CGHV27100F 1

CGHV27100-AMP Demonstration Amplier Circuit

Electrostatic Discharge (ESD) Classications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D

Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C

7CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV27100-AMP Demonstration Amplier Circuit Schematic

CGHV27100-AMP Demonstration Amplier Circuit Outline

27 pF

10 pF

0.033

8.2 pF C9

470 pF

C12

100

470 pF

27 pF

C10

0.033 C11

10 Ohm

5.6 pF

C13

8.2 pF

C14

470 pF C15

0.033

C17

C16

10 Ohm

12345

89 J3

Vd=+50VGND

Vg=-2.0V to -3.5V typ

8CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Dimensions CGHV27100F (Package Type — 440162)

Product Dimensions CGHV27100P (Package Type — 440161)

9CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Part Number System

Parameter Value Units

Upper Frequency12.7 GHz

Power Output 100 W

Package Flange -

Table 1.

Note1: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code Code Value

C 2

F 5

H 7

K 9

Examples: 1A = 10.0 GHz

2H = 27.0 GHz

Table 2.

Package

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

CGHV27100F

10 CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Ordering Information

Order Number Description Unit of Measure Image

CGHV27100F GaN HEMT Each

CGHV27100P GaN HEMT Each

CGHV27100-TB Test board without GaN HEMT Each

CGHV27100F-AMP Test board with GaN HEMT installed Each

11 CGHV27100 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Disclaimer

Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing & Sales

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639