BCV26 BCV26 Surface Mount Darlington Si-Epi-Planar Transistors Si-Epi-Planar Darlington-Transistoren fur die Oberflachenmontage PNP PNP Version 2010-07-14 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 200 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BCV26 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 30 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 40 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 10 V Power dissipation - Verlustleistung Ptot 200 mW 1) Collector current - Kollektorstrom (dc) - IC 500 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 4000 10000 20000 - - - - - - 1.0 V - - 1.5 V 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 100 mA hFE hFE hFE - 2 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) - IC = 100 mA, - IB = 0.1 mA - VCEsat 2 Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung ) - IC = 100 mA, - IB = 0.1 mA 1 2 - VBEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BCV26 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - ICBO - - 100 nA - IEBO - -- 100 nA fT - 220 MHz - Emitter-Base-cutoff current - Emitter-Basis-Reststrom - VEB = 10 V, (C open) Gain-Bandwidth Product - Transitfrequenz - IC = 5 mA, - VCE = 30 V, f = 100 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft < 420 K/W 1) RthA 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG