VISHAY 1.0A Fast Recovery Rectifier Features Diffused junction Fast switching for high efficiency High current capability and low forward voltage drop @ Surge overload rating to 30A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings 1N4933/L1N4937/L Vishay Lite-On Power Semiconductor 14.451 Tj = 25C Repetitive peak reverse voltage 1N4933/L Vrru 50 Vv =Working peak reverse voltage 1N4934/L | =Vrweu 100 Vv =DC Blocking voltage 4N4935/L =VpR 200 V 1N4936/L 400 Vv 1N4937/L 600 Vv Peak forward surge current lesm 30 A Average forward current Ta=/75C lEAy 1 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage Ir=1A Ve 1.2 Vv Reverse current Ty=25C IR 5 uA Ta=100C IR 100 | pA Reverse recovery time IR=1A, I-=0.5A, |,-=0.25A ter 200 | ns Diode capacitance VR=4V, f=1MHz Cp 15 pF Thermal resistance RthJA 100 KAW junction to ambient Rev. A2, 24-Jun-981N4933/L1N4937/L war Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) ~ 10 q 30 r TTT < = Pulse Width = 5 8.3ms Single Half 0.8 5 Sine-Wave 3 \ 0 2 = =20 N = 0.6 5 N = N Z WN uw o N 04 = x in 10 x 2 wo MN <x I 0.2 v eee 2 PG Board Mounted | ne = = 9.5mm Lead Lengths o 0 _ 0 0 2 50 75 100 125 150 175 1 10 100 15506 Tamb Ambient Temperature ( C ) 15508 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 20 100 10 ~ ~ w re a = g cI 1.0 5 zg & 10 5 2 r 2 1 O01 ao a I a oO Tj = 25C IF Pulse Width = 300 ps 0.01 1 0.6 08 1.0 1.2 14 16 1 10 100 15507 Ve Forward Voltage ( V ) 15509 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-981N4933/L1N4937/L VISHAY Dimensions in mm Vishay Lite-On Power Semiconductor "L" Suffix Designates A-405 Package No Suffix Designates UO-41 Package UO0-44 A-405 Uim Min Max Min Max A 25.40 - 25.40 - B 4.06 5.21 4.10 5.20 C 0.71 0.864 0.53 0.64 D 2.00 2.12 2.00 2.10 ALL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: DO-41 0.35 grams, A405 0.20 grams Mounting position: any Marking: type number 4 & technical. drawings according to DIN specifications 14447 Rev. A2, 24-Jun-981N4933/L1N4937/L Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98