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FCP067N65S3 N-Channel SuperFET(R) III MOSFET 650 V, 44 A, 67 m Features Description o SuperFET(R) III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency. * 700 V @ TJ = 150 C * Typ. RDS(on) = 59 m * Ultra Low Gate Charge (Typ. Qg = 78 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF) * 100% Avalanche Tested * RoHS Compliant Applications * Telecom / Sever Power Supplies * Industrial Power Supplies * UPS / Solar D GD S G TO-220 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FCP067N65S3 650 - DC Unit V 30 - AC (f>1 Hz) o - Continuous (TC = 25 C) V 30 44 ID Drain Current IDM Drain Current (Note 1) 110 A EAS Single Pulsed Avalanche Energy (Note 2) 214 mJ IAS Avalanche Current (Note 1) 4.8 A EAR Repetitive Avalanche Energy (Note 1) 3.12 mJ dv/dt - Continuous (TC = 100oC) - Pulsed MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL A 28 - Derate Above 25oC 20 V/ns 312 W 2.5 W/oC -55 to +150 oC 300 oC FCP067N65S3 Unit Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. 0.4 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 Semiconductor Components Industries, LLC, 2017 January, 2017, Rev. 1.4 o C/W Publication Order Number: FCP067N65S3 1 FCP067N65S3 -- N-Channel SuperFET(R) III MOSFET www.onsemi.com Part Number FCP067N65S3 Top Mark FCP067N65S3 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25C 650 - - V VGS = 0 V, ID = 1 mA, TJ = 150C 700 - - V - 0.72 - V/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current o ID = 1 mA, Referenced to 25 C VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, TC = 125oC - 2.2 - VGS = 30 V, VDS = 0 V - - 100 2.5 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 4.4 mA - 4.5 V Static Drain to Source On Resistance - 59 67 m gFS Forward Transconductance VGS = 10 V, ID = 22 A VDS = 20 V, ID = 22 A - 29 - S VDS = 400V, VGS = 0 V, f = 1 MHz - 3090 - pF - 68 - pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 715 - Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 104 - pF Qg(tot) Total Gate Charge at 10V 78 - nC Qgs Gate to Source Gate Charge VDS = 400 V, ID = 22 A, VGS = 10 V - 18 - nC Qgd Gate to Drain "Miller" Charge - 30 - nC ESR Equivalent Series Resistance f = 1 MHz - 0.6 - - 26 - ns VDD = 400 V, ID = 22 A, VGS = 10 V, Rg = 4.7 - 52 - ns - 89 - ns - 16 - ns (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Source-Drain Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 44 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 110 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 22 A - - 1.2 V trr Reverse Recovery Time 435 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 22 A, dIF/dt = 100 A/s - 9.2 - C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4.8 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 22 A, di/dt 200 A/s, VDD 380V, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FCP067N65S3 -- N-Channel SuperFET(R) III MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250s Pulse Test 100 ID, Drain Current [A] 100 ID, Drain Current [A] Figure 2. Transfer Characteristics 10 o 150 C 10 o 25 C *Notes: 1. 250s Pulse Test o -55 C o 2. TC = 25 C 1 0.3 1 10 VDS, Drain-Source Voltage [V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.25 200 o VGS = 10V VGS = 20V 0 2. 250s Pulse Test IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 0.15 0.00 30 60 90 ID, Drain Current [A] o 1 o -55 C VGS, Gate-Source Voltage [V] 10 Capacitances [pF] Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10000 1 o 25 C 100000 10 150 C 10 0.1 0.0 120 Figure 5. Capacitance Characteristics 100 7 *Notes: 1. VGS = 0V 100 0.20 0.05 3 4 5 6 VGS, Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature *Note: TC = 25 C 0.10 2 www.onsemi.com 3 VDS = 130V 8 VDS = 400V 6 4 2 0 1000 *Note: ID = 22A 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 FCP067N65S3 -- N-Channel SuperFET(R) III MOSFET Typical Performance Characteristics FCP067N65S3 -- N-Channel SuperFET(R) III MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 *Notes: 1. VGS = 0V 2. ID = 1mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -50 2.0 1.5 1.0 0.5 0.0 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 200 100 2.5 *Notes: 1. VGS = 10V 2. ID = 22A -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 50 10s 40 10 ID, Drain Current [A] ID, Drain Current [A] 100s 1ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: o 0.1 1. TC = 25 C 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 Figure 11. Eoss vs. Drain to Source Voltage 20 EOSS, [J] 16 12 8 4 0 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 20 10 o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 30 600 650 www.onsemi.com 4 50 75 100 125 o TC, Case Temperature [ C] 150 1 o ZJC(t), Thermal Response [ C/W] Figure 12. Transient Thermal Response Curve 0.5 0.1 0.2 0.1 0.01 PDM 0.05 0.02 0.01 t1 *Notes: Single pulse t2 o 1. ZJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 1E-3 -5 10 -4 10 -3 -2 -1 0 10 10 10 10 t1, Rectangular Pulse Duration [sec] www.onsemi.com 5 1 10 2 10 FCP067N65S3 -- N-Channel SuperFET(R) III MOSFET Typical Performance Characteristics (Continued) FCP067N65S3 -- N-Channel SuperFET(R) III MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FCP067N65S3 -- N-Channel SuperFET(R) III MOSFET DUT SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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