~ ALPHA {| SEMICONDUCTOR SE Excellence in Analog Power Products SST2 1 1/SST2 1 3/SST2 1 5 FAST DMOS FET Switches N-Channel Enhancement-Mode FEATURES APPLICATIONS High Speed Switching taony Ins Low Capacitance 2.4pF typical Low ON Resistance 50 typical High Gain e Surface Mount Package Ultra High Speed Analog Switching e Sample and Hold Multiplexers High Gain Amplifiers PRODUCT DESCRIPTION The ALPHA Semiconductors SST series is a high speed, ultra low capacitance SPST analog switch designed for audio, video and high frequency applications. Utilizing ALPHAs proprietary DMOS processing the SST211 Series features an integrated zener diode designed to protect the gate from electrical over stress. ORDERING INFORMATION Part Number Temperature Range Package Type SST211Y -55 to +125C SOT-143 Surface Mount SST213Y -55 to +125C SOT-143 Surface Mount SST215Y -55 to +125C SOT-143 Surface Mount SST211X -55 to +125C Sorted Chips in Carriers SST213X -55 to +125C Sorted Chips in Carriers SST215X -55 to +125C Sorted Chips in Carriers Pin Connections SOT-143 DRAIN GATE BODY SOURCE Top View Alpha Semiconductor Inc. 1031 Serpentine Lane. Pleasanton, CA 94566 Tel: (9250 417-1391 Fax: (925) 417-1390 Rev.1 1/24/98SST211/SST213/SST215 ABSOLUTE MAXIMUM RATINGS (Tc = +25C unless otherwise specified.) Parameter Breakdown Voltages SST211 SST213 SST215 Unit Vobs +30 +10 +20 Vv Vsp +10 +10 +20 Vv Vos +30 +15 +25 Vv Vos +15 +15 +25 Vv Vsp -15 -15 -25 Vv Vas +25 +25 +30 V -0.3 -0.3 -0.3 Vv Vos +25 +25 +30 V -30 -15 -25 Vv Vop +25 +25 +30 Continuous Drain Current ...........ccesscccsesssecsessseeseseeess 50mA Power Dissipation (at or below Tce = +25C) 360mW Linear Derating Factor ...........ccesscccsesssecsessteeeeesnees 3.6mW/C Operating Junction Temperature Range.............. -55 to 125C Storage Temperature Range............cccccceesseeeeenees -55 to 150C ELECTRICAL CHARACTERISTICS (Tc = +25C unless otherwise specified.) Parameter Conditions . SST211 . SST213 . SST215 Unit Min Typ Max Min Typ Max Min Typ Max STATIC Drain-Source Ip = 10nA, Ves = 30 35 Vv Breakdown Voltage Vps = 0 10 25 10 25 20 25 Source-Drain lp = 10nA, Vos = 10 10 5 20 Vv Breakdown Current Ves = -5V Drain-Body ls = 10nA, Ven = 15 15 25 Vv Breakdown Voltage Vap = -5V Source-Body lp = 10nA, Voz = 15 15 5 Vv Breakdown Voltage 0 Source OPEN Drain-Source OFF ls = 10HA, Voz = 0.2 10 02 10 nA Current 0 Drain OPEN 0.2 10 Source-Drain OFF Vps = 10V Ves = 0.6 10 0.6 10 nA Current Vas =-5V Vps = 20V 0.6 10 Gate-Body Leakage Vos = 25V Ven = 10 10 WA Current Vep = -5V Vos = 30V Gate Threshold Vos = Vas, lp = 0.5 1.0 2.0 0.1 2.0 0.1 1.0 2.0 V Voltage 1uwA, Vsp =0 Drain-Source ON Vos=5V Ib= 50 | 70 50 | 70 50 | 70 ohms Resistance ImA Vos=10V Vsp 30 45 30 45 30 45 =0 Alpha Semiconductor Inc. 1031 Serpentine Lane. Pleasanton, CA 94566 Tel: (9250 417-1391 Fax: (925) 417-1390 Rev.1 1/24/98SST211/SST213/SST215 DYNAMIC Common-Source! Vps = LOV, Ip = 10 12 10 12 10 12 mS Forward 20mA Transconductance f= 1KHz, Vsp = 0 Gate Node Vos = 10V 24 | 3.5 24 | 3.5 24 | 3.5 pF Capacitance Vos = Vas = -15V f= 1MHz Drain Node Vos = 10V 13] 15 13] 15 13 | 15 pF Capacitance Vos = Vas = -15V f= 1MHz Source Node Vps = 10V 35 4.0 3.5 4.0 3.5 | 4.0 pF Capacitance Vos = Vas = -15V f= 1MHz Reverse Transfer Vps = 10V 0.3 0.5 0.3 0.5 0.3 0.5 pF Capacitance Vos = Vas = -15V f= 1MHz Turn ON Delay Time | Vpp =5V, Vcon) 0.7 1.0 0.7 1.0 0.7 1.0 ns =10V Ri = 680, Rg = 51 Rise Time Von = 5V, Veon 0.8 1.0 0.8 1.0 0.8 1.0 ns =10V Ri = 680, Rg = 51 Turn OFF Time Vpn = 5V, Voor 10 10 10 ns =10V Ri = 680, Rg = 51 Note 1: Pulse Test, 80 Sec, 1% Duty Cycle Typical Performance Characteristics: See SST211-215 Series Alpha Semiconductor Inc. 1031 Serpentine Lane. Pleasanton, CA 94566 Tel: (9250 417-1391 Fax: (925) 417-1390 Rev.1 1/24/98