REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
AD8072/AD8073
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
Low Cost, Dual/Triple
Video Amplifiers
PIN CONFIGURATIONS
8-Lead Plastic (N), SOIC (R), and SOIC (RM) Packages
TOP VIEW
(
Not to Scale
)
8
7
6
5
1
2
3
4
OUT1
–IN1
+IN1
–VS
+VS
OUT2
–IN2
+IN2
AD8072
14-Lead Plastic (N), and SOIC (R) Packages
TOP VIEW
(Not to Scale)
14
13
12
11
10
9
8
1
2
3
4
5
6
7
NC = NO CONNECT
NC
NC
+VS
+IN1
IN1
OUT1
OUT2
IN2
+IN2
VS
+IN3
IN3
OUT3
NC
AD8073
FEATURES
Very Low Cost
Good Video Specifications (RL = 150 )
Gain Flatness of 0.1 dB to 10 MHz
0.05% Differential Gain Error
0.1 Differential Phase Error
Low Power
3.5 mA/Amplifier Supply Current
Operates on Single 5 V to 12 V Supply
High Speed
100 MHz, –3 dB Bandwidth (G = +2)
500 V/s Slew Rate
Fast Settling Time of 25 ns (0.1%)
Easy to Use
30 mA Output Current
Output Swing to 1.3 V of Rails on Single 5 V Supply
APPLICATIONS
Video Line Driver
Computer Video Plug-In Boards
RGB or S-Video Amplifier in Component Systems
PRODUCT DESCRIPTION
The AD8072 (dual) and AD8073 (triple) are low cost, current
feedback amplifiers intended for high volume, cost sensitive
applications. In addition to being low cost, these amplifiers
deliver solid video performance into a 150 load while consuming
only 3.5 mA per amplifier of supply current. Furthermore, the
AD8073 is three amplifiers in a single 14-lead narrow-body
SOIC package. This makes it ideal for applications where small
size is essential. Each amplifier’s inputs and output are acces-
sible providing added gain setting flexibility.
These devices provide 30 mA of output current per amplifier,
and are optimized for driving one back terminated video load
(150 ) each. These current feedback amplifiers feature gain
flatness of 0.1 dB to 10 MHz while offering differential gain and
phase error of 0.05% and 0.1°. This makes the AD8072 and
AD8073 ideal for business and consumer video electronics.
Both will operate from a single 5 V to 12 V power supply. The
outputs of each amplifier swing to within 1.3 volts of either sup-
ply rail to accommodate video signals on a single 5 V supply.
The high bandwidth of 100 MHz, 500 V/µs of slew rate, along
with settling to 0.1% in 25 ns, make the AD8072 and AD8073
useful in many general purpose, high speed applications where a
single 5 V or dual power supplies up to ±6 V are needed. The
AD8072 is available in 8-lead plastic DIP, SOIC, and µSOIC
packages while the AD8073 is available in 14-lead plastic DIP and
SOIC packages. Both operate over the commercial temperature
range of 0°C to 70°C. Additionally, the AD8072ARM operates
over the industrial temperature range of –40°C to +85°C.
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
5.3
0.1 500110100
5.9
5.8
5.4
5.7
5.6
5.5
6
5
4
3
2
1
0
VS = 5V
VO = 2V p-p
RF = RG = 1k
RL = 150
AV = 2
CLOSED-LOOP GAIN dB
7
1
0.1 dB
DIV
1 dB
DIV
Figure 1. Large Signal Frequency Response
REV. D
–2–
AD8072/AD8073–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
AD8072/AD8073
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE R
F
= 1 k
–3 dB Bandwidth, Small Signal No Peaking, G = +2 80 100 MHz
0.1 dB Bandwidth, Small Signal No Peaking, G = +2 8 10 MHz
Slew Rate V
O
= 4 V Step 500 V/µs
Settling Time to 0.1% V
O
= 2 V Step 25 ns
DISTORTION/NOISE PERFORMANCE R
F
= 1 k
Differential Gain f = 3.58 MHz, G = +2 0.05 0.15 %
Differential Phase f = 3.58 MHz, G = +2 0.1 0.3 Degrees
Crosstalk f = 5 MHz 60 dB
Input Voltage Noise f = 10 kHz 3 nV/Hz
Input Current Noise f = 10 kHz (±I
IN
) 6 pA/Hz
DC PERFORMANCE
Transimpedance 0.3 M
Input Offset Voltage 2 6 mV
T
MIN
to T
MAX
8mV
Offset Drift 11 µV/°C
Input Bias Current (±)412µA
Input Bias Current Drift (±)12nA/°C
INPUT CHARACTERISTICS
–Input Resistance 120
+Input Resistance 1 M
Input Capacitance 1.6 pF
Common-Mode Rejection Ratio V
CM
= –3.8 V to +3.8 V 56 dB
Input Common-Mode Voltage Range ±3.8 V
OUTPUT CHARACTERISTICS
+Output Voltage Swing 3 3.3 V
–Output Voltage Swing 2.25 3 V
Output Current R
L
= 10 30 mA
Short Circuit Current 80 mA
POWER SUPPLY
Operating Range ±2.5 to ±6V
Power Supply Rejection Ratio V
S
= ±4 V to ±6 V 70 dB
Quiescent Current per Amplifier 3.5 5 mA
OPERATING TEMPERATURE RANGE 0 70 °C
Specifications subject to change without notice.
(@ TA = 25C, VS = 5 V, RL = 150 , unless otherwise noted.)
REV. D –3–
AD8072/AD8073
ELECTRICAL CHARACTERISTICS
AD8072/AD8073
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE R
F
= 1 k
–3 dB Bandwidth, Small Signal No Peaking, G = +2 78 100 MHz
0.1 dB Bandwidth, Small Signal No Peaking, G = +2 7.8 10 MHz
Slew Rate V
O
= 2 V Step 350 V/µs
Settling Time to 0.1% V
O
= 2 V Step 25 ns
DISTORTION/NOISE PERFORMANCE R
F
= 1 k
Differential Gain f = 3.58 MHz, G = +2, R
L
to 1.5 V 0.1 %
Differential Phase f = 3.58 MHz, G = +2, R
L
to 1.5 V 0.1 Degrees
Crosstalk f = 5 MHz 60 dB
Input Voltage Noise f = 10 kHz 3 nV/Hz
Input Current Noise f = 10 kHz (±I
IN
) 6 pA/Hz
DC PERFORMANCE
Transimpedance 0.25 M
Input Offset Voltage 1.5 4 mV
T
MIN
to T
MAX
6mV
Offset Drift 9µV/°C
Input Bias Current (±)310µA
Input Bias Current Drift (±)10nA/°C
INPUT CHARACTERISTICS
–Input Resistance 120
+Input Resistance 1M
Input Capacitance 1.6 pF
Common-Mode Rejection Ratio V
CM
= 1.2 V to 3.8 V 54 dB
Input Common-Mode Voltage Range 1.2 to 3.8 V
OUTPUT CHARACTERISTICS
Output Voltage Swing R
L
= 150 1.5 to 3.5 1.3 to 3.7 V
Output Voltage Swing R
L
= 1 k T
MIN
to T
MAX
1.3 to 3.7 1.1 to 3.9 V
Output Current R
L
= 10 20 mA
Short Circuit Current 60 mA
POWER SUPPLY
Operating Range ±2.5 to ±6V
Power Supply Rejection Ratio V
S
= 4 V to 6 V 64 dB
Quiescent Current per Amplifier 3 4.5 mA
OPERATING TEMPERATURE RANGE 0 70 °C
Specifications subject to change without notice.
(@ TA = 25C, VS = 5 V, RL = 150 to 2.5 V, unless otherwise noted.)
REV. D
AD8072/AD8073
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8072/AD8073 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.2 V
Internal Power Dissipation
2
AD8072 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . . 1.3 Watts
AD8072 8-Lead Small Outline (SO-8) . . . . . . . . . 0.9 Watts
AD8072 8-Lead µSOIC (RM) . . . . . . . . . . . . . . . . 0.6 Watts
AD8073 14-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.6 Watts
AD8073 14-Lead Small Outline (R) . . . . . . . . . . . 1.0 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . ±1.25 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range
N, R, RM Packages . . . . . . . . . . . . . . . . . . –65°C to +125°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic Package: θ
JA
= 90°C/W
8-Lead SOIC Package: θ
JA
= 140°C/W
8-Lead µSOIC Package: θ
JA
= 214°C/W
14-Lead Plastic Package: θ
JA
= 75°C/W
14-Lead SOIC Package: θ
JA
= 120°C/W
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
*AD8072ARM –40°C to +85°C 8-Lead µSOIC RM-8
*AD8072ARM-REEL –40°C to +85°C 13" Reel 8-Lead µSOIC RM-8
*AD8072ARM-REEL7 40°C to +85°C 7" Reel 8-Lead µSOIC RM-8
AD8072JN 0°C to 70°C 8-Lead Plastic DIP N-8
AD8072JR 0°C to 70°C 8-Lead SOIC SO-8
AD8072JR-REEL 0°C to 70°C 13" Reel 8-Lead SOIC SO-8
AD8072JR-REEL7 0°C to 70°C 7" Reel 8-Lead SOIC SO-8
AD8073JN 0°C to 70°C 14-Lead Plastic DIP N-14
AD8073JR 0°C to 70°C 14-Lead Narrow SOIC R-14
AD8073JR-REEL 0°C to 70°C 13" Reel 14-Lead SOIC R-14
AD8073JR-REEL7 0°C to 70°C 7" Reel 14-Lead SOIC R-14
*Brand Code: HLA
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8072
and AD8073 is limited by the associated rise in junction tem-
perature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8072 and AD8073 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maximum
junction temperature (150°C) is not exceeded under all condi-
tions. To ensure proper operation, it is necessary to observe the
maximum power derating curves shown in Figures 2 and 3.
MAXIMUM POWER DISSIPATION W
AMBIENT TEMPERATURE C
2.0
1.5
0
50 9040 30 20 10 0 1020 30 5060 708040
1.0
0.5
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150C
SOIC
Figure 2. AD8072 Maximum Power Dissipation vs.
Temperature
AMBIENT TEMPERATURE
C
2.5
2.0
0.5
50 9040
MAXIMUM POWER DISSIPATION W
30 20 100 1020 304050 60 80
1.5
1.0
70
14-LEAD SOIC
14-LEAD DIP PACKAGE
T
J
= 150
C
Figure 3. AD8073 Maximum Power Dissipation vs.
Temperature
WARNING!
ESD SENSITIVE DEVICE
REV. D
AD8072/AD8073
–5–
FREQUENCY MHz
7
CLOSED-LOOP GAIN dB
6
0.1
0.1 10001.0 10 100
5
4
0
3
2
1
VS = 5V
RF = 1k
RL = 150 TO 2.5V
AV = 2
VIN = 100mV p-p
0C
25C
70C
TPC 1. Frequency Response Over Temperature; V
S
= 5 V
FREQUENCY MHz
7
CLOSED-LOOP GAIN dB
6
0.1
0.1 10001.0 10 100
5
4
0
3
2
1
VS = 5V
RF = 1k
RL = 150
AV = 2
VIN = 100mV p-p
0C
25C
70C
TPC 2. Frequency Response Over Temperature; V
S
=
±
5 V
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
5.3
0.1 5001.0 10 100
5.9
5.8
5.4
5.7
5.6
5.5
VS = 5V
RF = 1k
RL = 150 TO 2.5V
AV = 2
VIN = 100mV p-p
70C
0C, 25C
TPC 3. 0.1 dB Flatness vs. Frequency Over Temperature;
V
S
= 5 V
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
5.3
0.1 5001.0 10 100
5.9
5.8
5.4
5.7
5.6
5.5
VS = 5V
RF = 1k
RL = 150
AV = 2
VIN = 100mV p-p
0
C, 25
C
70
C
TPC 4. 0.1 dB Flatness vs. Frequency Over Temperature;
V
S
=
±
5 V
0.00 0.03 0.07 0.08 0.08 0.08 0.09 0.08 0.08 0.07 0.06
DIFFERENTIAL GAIN %
MIN = 0.00 MAX = 0.09 p-p/MAX = 0.09
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.02
V
S
= 5V, R
F
= 1k, R
L
= 150 TO 1.5V, A
V
= 2
0.00 0.05 0.09 0.10 0.09 0.08 0.06 0.06 0.05 0.04 0.02
1
ST
2
ND
3
RD
4
TH
5
TH
6
TH
7
TH
8
TH
9
TH
10
TH
11
TH
MODULATING RAMP LEVEL IRE
DIFFERENTIAL PHASE deg
MIN = 0.00 MAX = 0.10 p-p = 0.10
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.02
V
S
= 5V, R
F
= 1k, R
L
= 150 TO 1.5V, A
V
= 2
TPC 5. Differential Gain and Phase, V
S
= 5 V
0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.02 0.03 0.03 0.03
DIFFERENTIAL GAIN %
MIN = 0.03 MAX = 0.00 p-p/MAX = 0.03
0.00
0.01
0.02
0.03
0.00 0.00 0.00 0.02 0.03 0.05 0.07 0.08 0.10 0.10 0.10
1
ST
2
ND
3
RD
4
TH
5
TH
6
TH
7
TH
8
TH
9
TH
10
TH
11
TH
MODULATING RAMP LEVEL IRE
DIFFERENTIAL PHASE deg
MIN = 0.10 MAX = 0.00 p-p = 0.10
0.02
0.00
0.02
0.04
0.06
0.08
0.10
0.12
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
TPC 6. Differential Gain and Phase, V
S
=
±
5 V
Typical Performance Characteristics
REV. D
AD8072/AD8073
–6–
FREQUENCY MHz
0
10
80
0.1 5001.0 10 100
20
30
70
40
50
60
90
100
CROSSTALK dB
AMP 2 OUTPUT
SOIC PACKAGE
DRIVE AMP 2
RECEIVE AMPS 1, 3 AD8073
RECEIVE AMP 1 AD8072
V
S
= 5V, 5V
R
F
= 1k, R
L
= 150
A
V
= 2
V
IN
= 1V p-p
TPC 7. Crosstalk vs. Frequency
FREQUENCY MHz
40
50
100
0.1 1
DISTORTION dBc
10
70
80
90
60
V
S
= 5V
R
F
= 1k
R
L
= 150
A
V
= 2
V
OUT
= 2V p-p 3RD
HARMONIC
2ND
HARMONIC
TPC 8. Distortion vs. Frequency; V
S
=
±
5 V
FREQUENCY MHz
40
DISTORTION dBc
50
100
0.1 1 10
70
80
90
60
3RD
HARMONIC
2ND
HARMONIC
V
S
= 5V
R
F
= 1k
R
L
= 150 TO 2.5V
A
V
= 2
V
OUT
= 2V p-p
TPC 9. Distortion vs. Frequency; V
S
= 5 V
100M
1k
10
10k
100
1k
100k
10k
10M1M100k
FREQUENCY Hz
DEGREES
0
20
40
60
80
100
120
140
160
180
1G
DEGREES
OHMS ()
T
Z
1M
TPC 10. Open-Loop Transimpedance vs. Frequency
FREQUENCY MHz
0.1 1k1 10 100
3
2
1
0
1
2
3
4
5
6
AV = 5
VS = 5V
RF = 1k
RL = 150
VOUT = 200mV p-p
AV = 1
AV = 10 AV = 2
NORMALIZED CLOSED-LOOP GAIN dB
TPC 11. Normalized Frequency Response; V
S
=
±
5 V
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
5.3
0.1 5001 10 100
5.9
5.8
5.4
5.7
5.6
5.5
6
5
4
3
2
1
0
0.1 dB
DIV
1 dB
DIV
CLOSED-LOOP GAIN dB
7
1
VS = 5V
VO = 2V p-p
RF = RG = 1k
RL = 150 TO 2.5V
AV = 2
TPC 12. Large Signal Frequency Response
REV. D
AD8072/AD8073
–7–
FREQUENCY MHz
100
OUTPUT RESISTANCE
0.1 5001 10 100
10
1
0.1
V
S
= 5V
R
F
= 1k
A
V
= 2
TPC 13. Output Resistance vs. Frequency; V
S
=
±
5 V
FREQUENCY Hz
50
40
0
1 100k10
INPUT VOLTAGE NOISE nV/ Hz
100 1k 10k
30
20
10
TPC 14. Noise vs. Frequency; V
S
=
±
5 V
50
FREQUENCY MHz
5
CMRR dB
10
45
0.1 5001 10 100
15
20
40
25
30
35
0.02
55
VIN
2V p-p
1k1k
60.4
154
154150
VOUT
TPC 17. CMRR vs. Frequency; V
S
=
±
5 V
FREQUENCY Hz
100
80
0
1 100k10
INPUT CURRENT NOISE pA/ Hz
100 1k 10k
60
40
20
TPC 15. Noise vs. Frequency; V
S
=
±
5 V
FREQUENCY MHz
10
PSRR dB
0
70
0.1 5001 10 100
10
20
60
30
40
50
0.02
VS = 5V
RF = 1k
RL = 150
AV = 2
100mV p-p ON TOP
OF VS
PSRR
PSRR
TPC 16. PSRR vs. Frequency
REV. D
AD8072/AD8073
–8–
1k1k
RL
150
50
VIN
VOUT
0.1F
0.1F
0.001F
0.001F
10F
10F
+
+
VS
VS
TPC 18. Test Circuit; Gain = +2
*
V
S
= ±2.5 V operation is identical to V
S
= 5 V single supply operation.
20ns
250mV
TPC 19. 2 V Step Response; G = +2, V
S
=
±
5 V
20ns
50mV
TPC 20. 200 mV Step Response; G = +2, V
S
=
±
5 V
20ns
1V
TPC 21. Sine Response; G = +2, V
S
=
±
5 V
10ns
250mV
TPC 22. 2 V Step Response; G = +2, V
S
=
±
2.5 V
*
20ns
50mV
TPC 23. 200 mV Step Response; G = +2, V
S
=
±
2.5 V
*
20ns
250mV
TPC 24. Sine Response; G = +2, V
S
=
±
2.5 V
*
REV. D
AD8072/AD8073
–9–
APPLICATIONS
Overdrive Recovery
Overdrive of an amplifier occurs when the output and/or input
range are exceeded. The amplifier must recover from this overdrive
condition and resume normal operation. As shown in Figure 4,
the AD8072 and AD8073 recover within 75 ns from positive
overdrive and 30 ns from negative overdrive.
25ns
1V
V
IN
V
OUT
Figure 4. Overload Recovery; V
S
=
±
5 V, V
IN
= 8 V p-p,
R
F
= 1 k
, R
L
= 150
, G = +2
Bandwidth vs. Feedback Resistor Value
The closed-loop frequency response of a current feedback amplifier
is a function of the feedback resistor. A smaller feedback resistor
will produce a wider bandwidth response. However, if the feed-
back resistance becomes too small, the gain flatness can be
affected. As a practical consideration, the minimum value of
feedback resistance for the AD8072/AD8073 was found to be
649 . For resistances below this value, the gain flatness will be
affected and more significant lot-to-lot variations in device per-
formance will be noticed. Figure 5 shows a plot of the frequency
response of an AD8072/AD8073 at a gain of two with both feed-
back and gain resistors equal to 649 .
FREQUENCY MHz
6.1
GAIN FLATNESS dB
6.0
0.1 5001 10 100
5.9
5.8
5.4
5.7
5.6
5.5
RF = 2k
RF = 649
1 dB
DIV
0.1 dB
DIV
6
7
5
4
3
2
1
0
VS = 5V
AV = 2
RL = 150
VO = 0.2V p-p
CLOSED-LOOP GAIN dB
Figure 5. Frequency Response vs. R
F
On the other hand, the bandwidth of a current feedback ampli-
fier can be decreased by increasing the feedback resistance. This
can sometimes be useful where it is desired to reduce the noise
bandwidth of a system. As a practical matter, the maximum
value of feedback resistor was found to be 2 k. Figure 5 shows
the frequency response of an AD8072/AD8073 at a gain of two
with both feedback and gain resistors equal to 2 k.
Capacitive Load Drive
When an op amp output drives a capacitive load, extra phase shift
due to the pole formed by the op amp’s output impedance and
the capacitor can cause peaking or even oscillation. The top trace
of Figure 6, R
S
= 0 , shows the output of one of the amplifiers of
the AD8072/AD8073 when driving a 50 pF capacitor as shown in
the schematic of Figure 7.
The amount of peaking can be significantly reduced by adding
a resistor in series with the capacitor. The lower trace of Figure 6
shows the same capacitor being driven with a 25 resistor
in series with it. In general, the resistor value will have to be
experimentally determined, but 10 to 50 is a practical range
of values to experiment with for capacitive loads of up to a few
hundred pF.
20ns
50mV
R
S
= 0
R
S
= 25
Figure 6. Capacitive Low Drive
1k1k
50
VIN = 100mV p-p RL
1k
CL
50pF
RS
Figure 7. Capacitive Load Drive Circuit
REV. D
AD8072/AD8073
–10–
Crosstalk
Crosstalk between internal amplifiers may vary depending on
which amplifier is being driven and how many amplifiers are
being driven. This variation typically stems from pin location on
the package and the internal layout of the IC itself. Table I
illustrates the typical crosstalk results for a combination of
conditions.
Table I. AD8073JR Crosstalk Table (dB)
Receive Amplifier
AD8073JR 123
1X –60 –56
Drive 2–60 X –60
Amplifier 3–54 –60 X
All Hostile –53 –55 –54
CONDITIONS
V
S
= ±5 V
R
F
= 1 k, R
L
= 150
A
V
= 2
V
OUT
= 2 V p-p on Drive Amplifier
Layout Considerations
The specified high speed performance of the AD8072 and
AD8073 require careful attention to board layout and compo-
nent selection. Proper RF
design techniques and low parasitic
component selection are mandatory.
The PCB should have a ground plane covering all unused portions
of the component side of the board to provide a low impedance
ground path. The ground plane should be removed from the
area near the input pins to reduce stray capacitance.
Chip capacitors should be used for supply bypassing. One end
of the capacitor should be connected to the ground plane and
the other within 1/8 inches of each power pin. An additional
large (4.7 µF–10 µF) tantalum electrolytic capacitor should be
connected in parallel, but not necessarily as close to the supply
pins, to provide current for fast large-signal changes at the
device’s output.
The feedback resistor should be located close to the inverting
input pin in order to keep the stray capacitance at this node to a
minimum. Capacitance variations of less than 1 pF at the invert-
ing input will affect high speed performance.
Stripline design techniques should be used for long signal traces
(greater than approximately 1 inch). These should be designed
with a characteristic impedance of 50 or 75 and be properly
terminated at each end.
REV. D
AD8072/AD8073
–11–
8-Lead Plastic SOIC
(R-8)
0.1968 (5.00)
0.1890 (4.80)
85
41
0.2440 (6.20)
0.2284 (5.80)
PIN 1
0.1574 (4.00)
0.1497 (3.80)
0.0688 (1.75)
0.0532 (1.35)
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
0.0500
(1.27)
BSC
0.0098 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8°
0°
0.0196 (0.50)
0.0099 (0.25) x 45°
14-Lead SOIC
(R-14)
14 8
71
0.3444 (8.75)
0.3367 (8.55)
0.2440 (6.20)
0.2284 (5.80)
0.1574 (4.00)
0.1497 (3.80)
PIN 1
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
0.0688 (1.75)
0.0532 (1.35)
0.0500
(1.27)
BSC
0.0099 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8°
0°
0.0196 (0.50)
0.0099 (0.25) x 45°
8-Lead SOIC
(RM-8)
0.011 (0.28)
0.003 (0.08)
0.028 (0.71)
0.016 (0.41)
33
27
0.120 (3.05)
0.112 (2.84)
85
41
0.122 (3.10)
0.114 (2.90)
0.199 (5.05)
0.187 (4.75)
PIN 1
0.0256 (0.65) BSC
0.122 (3.10)
0.114 (2.90)
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.018 (0.46)
0.008 (0.20)
0.043 (1.09)
0.037 (0.94)
0.120 (3.05)
0.112 (2.84)
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic DIP
(N-8)
8
14
5
0.430 (10.92)
0.348 (8.84)
0.280 (7.11)
0.240 (6.10)
PIN 1
SEATING
PLANE
0.022 (0.558)
0.014 (0.356)
0.060 (1.52)
0.015 (0.38)
0.210 (5.33)
MAX 0.130
(3.30)
MIN
0.070 (1.77)
0.045 (1.15)
0.100
(2.54)
BSC
0.160 (4.06)
0.115 (2.93)
0.325 (8.25)
0.300 (7.62)
0.015 (0.381)
0.008 (0.204)
0.195 (4.95)
0.115 (2.93)
14-Lead Plastic DIP
(N-14)
14
17
8
0.795 (20.19)
0.725 (18.42)
0.280 (7.11)
0.240 (6.10)
PIN 1
0.325 (8.25)
0.300 (7.62)
0.015 (0.381)
0.008 (0.204)
0.195 (4.95)
0.115 (2.93)
SEATING
PLANE
0.022 (0.558)
0.014 (0.356)
0.060 (1.52)
0.015 (0.38)
0.210 (5.33)
MAX 0.130
(3.30)
MIN
0.070 (1.77)
0.045 (1.15)
0.100
(2.54)
BSC
0.160 (4.06)
0.115 (2.93)
REV. D
–12–
C01066–0–3/02(D)
PRINTED IN U.S.A.
AD8072/AD8073
Revision History
Location Page
3/02—Data Sheet changed from REV. C to REV. D.
Edits to Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
10/01—Data Sheet changed from REV. B to REV. C.
Edits to ELECTRICAL CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3