Philips Semiconductors PNP medium power transistors Product specification eee Tee ee BCP51; BCP52; BCP53 FEATURES e High current (max. 1 A) Low voltage (max. 80 V) * Medium power (max. 1.3 W). APPLICATIONS e Audio, telephony and automotive applications e Thick and thin-film circuits. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. QUICK REFERENCE DATA PINNING PIN DESCRIPTION 1 base 2,4 collector 3 emitter | 2,4 UU. U: Tap view Fig.1 Simplified outline (SOT223) and symbol. MAM282 SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Veso coliector-base voltage open emitter BCPS51 - - 45 Vv BCP52 - - -60 Vv BCP53 - - -100 |V Vceo collector-emitter voltage open base BCP51 - - 45 Vv BCP52 - - --60 Vv BCP53 - - -80 Vv lom peak collector current - - -1.5 A Prot total power dissipation Tamb S 25 C - - 1.3 Ww hee DC current gain Ig = -150 MA; Veg = -2 V 40 - 250 fr transition frequency Ig = -10 MA; Vee = -5 V; f = 100 MHz | - 115 - MHz 1997 Apr 08 379Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vepo collector-base voltage open emitter BCP51 - ~45 Vv BCP52 - -60 Vv BCP53 ~ 100 Vv VcEo collector-emitter voltage open base BCP51 - 45 Vv BCP52 - -60 Vv BCP53 ~ 80 Vv VeEBO emitter-base voltage open collector ~ -5 Vv le collector current (DC) - -1 A lom peak coliector current - -1.5 A lan peak base current - -0.2 A Prot total power dissipation Tamb < 25 C; note 1 - 1.3 W Tstg storage temperature -65 +150 C Tj junction temperature - 150 G Tamb operating ambient temperature -65 +150 C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04". THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j-a thermal resistance from junction to ambient note 1 95 K/W Ph j-s thermal resistance from junction to soldering point 14 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?2. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04. 1997 Apr 08 380Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT logc collector cut-off current le = 0; Veg = -30 V - 1 -100 [nA le = 0; Vog = -30 V: T, = 125 C - a -10 [yA lego emitter cut-off current Io = 0; Vep = -5 V - - ~100 |nA Nee DC current gain Voge = ~2 V; see Fig.2 Ic =-5 MA 40 | - - Io = -150 mA 40 {- 250 I = -500 mA 25 - ~ Kee DC current gain Ic = 150 MA; Veg = ~2 V; see Fig.2 BCP51-10; BCP52-10; BCP53-10 63 - 160 BCP51-16; BCP52-16; BCP53-16 100 | - 250 Veesat collector-emitter saturation voltage | Ic = -500 mA; Ip = -50 mA - - -05 |V Vee base-emitter valtage Ip = -500 mA; Vcg = -2 V ~ - -1 Vv fr transition frequency Io = -10 MA; Voge =5 Vi f = 100 MHz | 15 |- MHz MBN730 ." i | | ELT Pr ' i i ofl ee ab oe 2 Erp te tlh He TAN ue 120 nnn 1 +H | | P T i i ill : PN | TT TN oe oh tA an \ i i Ty 40 4 : fp 4b | | | i wal ao. i |! IEEE M | | ee. LLL. -_ aA chee bee ete ceed te bet -107! a] ~10 102 - 10% Ie (mA) ~104 Fig.2 DC current gain; typical values. 1997 Apr 08 381