STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications 1 Very high frequency inverters, UPS HF, SMPS and PFC in both hard switch and resonant topologies Motor drivers Welding Description 2 3 Max247 Figure 1. Internal schematic diagram This IGBT utilizes the advanced Power MESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGY50NC60WD GY50NC60WD Max247 Tube January 2009 Rev 5 1/14 www.st.com 14 Contents STGY50NC60WD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGY50NC60WD 1 Electrical ratings Electrical ratings Table 1. Symbol VCES Absolute maximum ratings Parameter Value Unit Collector-emitter voltage (VGE = 0) 600 V IC (1) Collector current (continuous) at TC = 25 C 110 A IC (1) Collector current (continuous) at TC = 100 C 50 A ICL (2) Turn-off latching current 180 A (3) Pulsed collector current 180 A Diode RMS forward current at TC = 25 C 30 A IFSM Surge not repetitive forward current (tp=10 ms sinusoidal) 120 A VGE Gate-emitter voltage 20 V PTOT Total dissipation at TC = 25 C 278 W Tj Operating junction temperature -55 to 150 C ICP IF 1. Calculated according to the iterative formula: T j ( max ) - T C I C ( T C ) = ------------------------------------------------------------------------------------------------------R thj - c x V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Vclamp = 80% of VCES, Tj =150 C, RG=10 , VGE=15 V 3. Pulse width limited by max. temperature allowed Table 2. Symbol Thermal resistance Parameter Value Unit Rthj-case Thermal resistance junction-case IGBT max. 0.45 C/W Rthj-case Thermal resistance junction-case diode max. 1.5 C/W Rthj-amb Thermal resistance junction-ambient max. 50 C/W 3/14 Electrical characteristics 2 STGY50NC60WD Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol Static Parameter Collector-emitter V(BR)CES breakdown voltage (VGE= 0) Min. Typ. Max. Unit IC= 1 mA 600 V V 5.75 V VCE = 600 V VCE = 600 V,TC= 125 C 500 5 A mA Gate-emitter leakage current (VCE = 0) VGE = 20 V 100 nA Forward transconductance VCE = 15 V, IC = 40 A Collector-emitter saturation VGE = 15 V, IC = 40 A voltage VGE = 15 V, IC = 40 A,TC=125 C VGE(th) Gate threshold voltage VCE = VGE, IC= 250 A ICES Collector cut-off current (VGE = 0) IGES Table 4. Symbol V 2.6 VCE(sat) gfs 4/14 Test conditions 2.1 1.9 3.75 25 S Dynamic Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 4700 410 90 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 40 A, VGE = 15 V, Figure 16 195 32 82 nC nC nC STGY50NC60WD Table 5. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 40 A RG= 10 , VGE = 15 V, Figure 17, Figure 15 52 17 2400 ns ns A/s td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 40 A RG= 10 , VGE = 15 V, TC = 125 C Figure 17, Figure 15 50 19 2020 ns ns A/s tr(Voff) td(Voff) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 40 A RG= 10 , VGE = 15 V, Figure 17, Figure 15 31 240 35 ns ns ns tr(Voff) td(Voff) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 40 A RG= 10 , VGE = 15 V, TC = 125 C Figure 17, Figure 15 59 280 63 ns ns ns Table 6. Symbol Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit 470 790 1260 J J J Eon(1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 40 A RG= 10 , VGE = 15 V, Figure 15 365 560 925 Eon(1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 40 A RG= 10 , VGE = 15 V, TC = 125 C Figure 15 635 910 1545 J J J 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics Table 7. Symbol 6/14 STGY50NC60WD Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 40 A IF = 40 A, TC = 125 C 3.2 2.2 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 40 A,VR = 50 V, di/dt = 100 A/s Figure 18 55 100 3.6 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 40 A,VR = 50 V, TC =125 C, di/dt = 100 A/s (Figure 18) 164 525 6.4 ns nC A STGY50NC60WD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/14 Electrical characteristics STGY50NC60WD Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/14 STGY50NC60WD Figure 13. Turn-off SOA Electrical characteristics Figure 14. Forward voltage drop vs. forward current IFM(A) 120 110 Tj=125C (Maximum values) 100 90 80 Tj=125C (Typical values) 70 60 Tj=25C (Maximum values) 50 40 30 20 10 VFM(V) 0 0 1 2 3 4 5 6 9/14 Test circuit 3 STGY50NC60WD Test circuit Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit AM01504v1 Figure 17. Switching waveform AM01505v1 Figure 18. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF di/dt AM01506v1 10/14 AM01507v1 STGY50NC60WD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 11/14 Package mechanical data Table 8. STGY50NC60WD Max247 mechanical data mm Dim. Min. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Figure 19. Max247 drawing 0094330_Rev_D 12/14 Typ. STGY50NC60WD 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 09-Oct-2006 1 Initial release. 07-May-2007 2 Complete version 02-Jul-2007 3 Modified value on Table 2: Thermal resistance 04-Nov-2008 4 Table 8: Max247 mechanical data and Figure 19: Max247 drawing have been updated. 09-Jan-2009 5 Figure 13: Turn-off SOA has been updated. 13/14 STGY50NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. 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