STGY50NC60WD - STMicroelectronics

January 2009 Rev 5 1/14

STGY50NC60WD

50 A, 600 V, ultra fast IGBT

www.st.com

Features

■Very high frequency operation

■Low CRES / CIES ratio (no cross-conduction

susceptibility)

■Very soft ultra fast recovery antiparallel diode

Applications

■Very high frequency inverters, UPS

■HF, SMPS and PFC in both hard switch and

resonant topologies

■Motor drivers

■Welding

Description

This IGBT utilizes the advanced Power MESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Figure 1. Internal schematic diagram

Max247

Table 1. Device summary

Order code Marking Package Packaging

STGY50NC60WD GY50NC60WD Max247 Tube

Contents STGY50NC60WD

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Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

STGY50NC60WD Electrical ratings

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1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

IC(1)

1. Calculated according to the iterative formula:

Collector current (continuous) at TC = 25 °C 110 A

IC(1) Collector current (continuous) at TC = 100 °C 50 A

ICL (2)

2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V

Turn-off latching current 180 A

ICP (3)

3. Pulse width limited by max. temperature allowed

Pulsed collector current 180 A

IFDiode RMS forward current at TC = 25 °C 30 A

IFSM

Surge not repetitive forward current (tp=10 ms

sinusoidal) 120 A

VGE Gate-emitter voltage ±20 V

PTOT Total dissipation at TC = 25 °C 278 W

TjOperating junction temperature -55 to 150 °C

Table 2. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case IGBT max. 0.45 °C/W

Rthj-case Thermal resistance junction-case diode max. 1.5 °C/W

Rthj-amb Thermal resistance junction-ambient max. 50 °C/W

ICTC

() Tjmax()

–

Rthj c–VCE sat()max()

Tjmax()

ICTC

(),()×

-------------------------------------------------------------------------------------------------------=

Electrical characteristics STGY50NC60WD

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2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC= 1 mA 600 V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

VGE = 15 V, IC = 40 A,TC=125 °C

2.1

1.9

2.6 V

VGE(th) Gate threshold voltage VCE = VGE, IC= 250 µA 3.75 5.75 V

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V,TC= 125 °C

500

µA

IGES

Gate-emitter leakage

current (VCE = 0) VGE = ±20 V ±100 nA

gfs Forward transconductance VCE = 15 V, IC = 40 A 25 S

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

4700

410

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 40 A,

VGE = 15 V,

Figure 16

195

STGY50NC60WD Electrical characteristics

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Table 5. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 40 A

RG= 10 Ω, VGE = 15 V,

Figure 17, Figure 15

2400

A/µs

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 40 A

RG= 10 Ω, VGE = 15 V,

TC = 125 °C

Figure 17, Figure 15

2020

A/µs

tr(Voff)

td(Voff)

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 390 V, IC = 40 A

RG= 10 Ω, VGE = 15 V,

Figure 17, Figure 15

240

tr(Voff)

td(Voff)

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 390 V, IC = 40 A

RG= 10 Ω, VGE = 15 V,

TC = 125 °C

Figure 17, Figure 15

280

Table 6. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon(1)

Eoff(2)

Ets

1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 18 If the IGBT is offered in

a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the

same temperature (25°C and 125°C)

2. Turn-off losses include also the tail of the collector current

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 40 A

RG= 10 Ω, VGE = 15 V,

Figure 15

365

560

925

470

790

1260

µJ

Eon(1)

Eoff(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 40 A

RG= 10 Ω, VGE = 15 V,

TC = 125 °C

Figure 15

635

910

1545

µJ

Electrical characteristics STGY50NC60WD

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Table 7. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VFForward on-voltage IF = 40 A

IF = 40 A, TC = 125 °C

3.2

2.2

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 40 A,VR = 50 V,

di/dt = 100 A/µs

Figure 18

100

3.6

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 40 A,VR = 50 V,

TC =125 °C,

di/dt = 100 A/µs (Figure 18)

164

525

6.4

STGY50NC60WD Electrical characteristics

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2.1 Electrical characteristics (curves)

Figure 1. Output characteristics Figure 2. Transfer characteristics

Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs

temperature

Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations

Electrical characteristics STGY50NC60WD

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Figure 7. Normalized gate threshold voltage

vs temperature

Figure 8. Collector-emitter on voltage vs

collector current

Figure 9. Normalized breakdown voltage vs

temperature

Figure 10. Switching losses vs temperature

Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector

current

STGY50NC60WD Electrical characteristics

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Figure 13. Turn-off SOA Figure 14. Forward voltage drop vs. forward

current

100

110

120

0123456

VFM(V)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typicalvalues)

Tj=125°C

(Typicalvalues)

IFM(A)

Test circuit STGY50NC60WD

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3 Test circuit

Figure 15. Test circuit for inductive load

switching

Figure 16. Gate charge test circuit

Figure 17. Switching waveform Figure 18. Diode recovery time waveform

AM01504v1 AM01505v1

AM01506v1

90%

10%

90%

10%

VCE

ICTd(on)

To n

Tr(Ion)

Td(off)

Toff

Tr(Voff)

Tcross

90%

10%

AM01507v1

IRRM

di/dt

trr

tatb

Qrr

IRRM

di/dt

STGY50NC60WD Package mechanical data

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4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

Package mechanical data STGY50NC60WD

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Figure 19. Max247 drawing

Table 8. Max247 mechanical data

Dim.

Min. Typ. Max.

A 4.70 5.30

A1 2.20 2.60

b 1.00 1.40

b1 2.00 2.40

b2 3.00 3.40

c 0.40 0.80

D 19.70 20.30

e 5.35 5.55

E 15.30 15.90

L 14.20 15.20

L1 3.70 4.30

0094330_Rev_D

STGY50NC60WD Revision history

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5 Revision history

Table 9. Document revision history

Date Revision Changes

09-Oct-2006 1 Initial release.

07-May-2007 2 Complete version

02-Jul-2007 3 Modified value on Table 2: Thermal resistance

04-Nov-2008 4 Table 8: Max247 mechanical data and Figure 19: Max247 drawing

have been updated.

09-Jan-2009 5 Figure 13: Turn-off SOA has been updated.

STGY50NC60WD

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