RS3A - RS3M
Taiwan Semiconductor
1 Version:J1708
3A, 50V - 1000V Surface Mount Fast Recovery Rectifier
FEATURES
● Glass passivated chip junction
● Ideal for automated placement
● Fast switching for high efficiency
● High surge current capability
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● Converter
MECHANICAL DATA
● Case: DO-214AB (SMC)
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
3
A
VRRM
50 - 1000
V
IFSM
100
A
TJ MAX
150
°C
Package
DO-214AB (SMC)
Configuration
Single die
DO-214AB (SMC)
PARAMETER
SYMBOL
RS3A
RS3B
RS3D
RS3G
RS3J
RS3K
RS3M
UNIT
Marking code on the device
RS3A
RS3B
RS3D
RS3G
RS3J
RS3K
RS3M
Repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Reverse voltage, total rms value
VR(RMS)
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Forward current
IF(AV)
3
A
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
100
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
RS3A - RS3M
Taiwan Semiconductor
2 Version:J1708
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-lead thermal resistance per diode
RӨJL
15
°C/W
Junction-to-ambient thermal resistance per diode
RӨJA
50
°C/W
PARAMETER
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Forward voltage per diode (1)
IF = 3A, TJ = 25°C
VF
-
1.3
V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
10
µA
TJ = 125°C
-
250
µA
Reverse recovery time
RS3A
RS3B
RS3D
RS3G
IF=0.5A , IR=1.0A
IRR=0.25A
trr
-
150
ns
RS3J
-
250
ns
RS3K
RS3M
-
500
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
RS3A - RS3M
Taiwan Semiconductor
3 Version:J1708
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
RS3x
(Note 1)
H
R7
G
SMC
850 / 7" Plastic reel
R6
SMC
3,000 / 13" Paper reel
M6
SMC
3,000 / 13" Plastic reel
V7
Matrix SMC
850 / 7" Plastic reel
V6
Matrix SMC
3,000 / 13" Plastic reel
Note :
1. "x" defines voltage from 50V (RS3A) to 1000V (RS3M)
EXAMPLE P/N
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
DESCRIPTION
RS3AHR7G
RS3A
H
R7
G
AEC-Q101 qualified
Green compound
RS3A - RS3M
Taiwan Semiconductor
4 Version:J1708
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
025 50 75 100 125 150
LEAD TEMPERATURE (°C)
RESISTIVE OR
INDUCTIVE LOAD
10
100
110 100
CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
020 40 60 80 100 120 140
TJ=25oC
TJ=125oC
TJ=75oC
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Pulse width=300μs
1% duty cycle
TJ=25oC
TJ=40oC
TJ=125oC
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
REVERSE VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
RS3A - RS3M
Taiwan Semiconductor
5 Version:J1708
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
PEAK FORWARD SURGE CURRENT (A)
0
25
50
75
100
125
150
110 100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
RS3A - RS3M
Taiwan Semiconductor
6 Version:J1708
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
DIM.
Unit (mm)
Unit (inch)
Min.
Max.
Min.
Max.
A
2.90
3.20
0.114
0.126
B
6.60
7.11
0.260
0.280
C
5.59
6.22
0.220
0.245
D
2.00
2.62
0.079
0.103
E
1.00
1.60
0.039
0.063
F
7.75
8.13
0.305
0.320
G
0.10
0.20
0.004
0.008
H
0.15
0.31
0.006
0.012
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Symbol
Unit (mm)
Unit (inch)
A
3.30
0.130
B
2.50
0.098
C
6.80
0.268
D
4.40
0.173
E
9.40
0.370
P/N
=Marking Code
G
=Green Compound
YW
=Date Code
F
=Factory Code
RS3A - RS3M
Taiwan Semiconductor
7 Version:J1708
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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