All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11 Rev. 03, 2010-08-11
PTFA091503EL
Confidential, Limited Internal Distribution
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—veried by design/characterization in Inneon test
xture)
VDD = 30 V, IDQ = 1250 mA, POUT = 32 W average
ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps — 17 — dB
Drain Efciency hD — 29 — %
Intermodulation Distortion IMD — –37 — dBc
Thermally-Enhanced High Power RF LDMOS FET
150 W, 920 – 960 MHz
Description
The PTFA091503EL is a 150-watt, internally-matched FET intended
for use in power amplier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced
open cavity ceramic package. Manufactured with Inneon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PTFA091503EL
Package H-33288-6
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 32 W
- Linear Gain = 17 dB
- Efciency = 29%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P1dB = 150 W
- Linear Gain = 17 dB
- Efciency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
• Pb-free, RoHS-compliant
-60
-55
-50
-45
-40
-35
-30
0
10
20
30
40
50
60
30 35 40 45 50
IMD (dBc) , ACPR (dBc)
Drain Efficiency (%)
Output Power (dBm)
Two-carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1250 mA, ƒ = 960 MHz, 3GPP
WCDMA signal, PAR = 8 dB, 10 MHz carrier
spacing, 3.84MHz Bandwidth
Efficiency
IMD
ACPR
Gain
Data Sheet 2 of 11 Rev. 03, 2010-08-11
PTFA091503EL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Inneon test xture)
VDD = 30 V, IDQ = 1250 mA, POUT = 140 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 16 17 — dB
Drain Efciency hD 40 42 — %
Intermodulation Distortion IMD — –30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — W
Operating Gate Voltage VDS = 30 V, IDQ = 1250 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70 °C, 150 W CW) RqJC 0.42 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFA091503EL V4 H-33288-6 Thermally-enhanced slotted ange, single-ended Tray
PTFA091503EL V4 R250 H-33288-6 Thermally-enhanced slotted ange, single-ended Tape & Reel, 250 pcs
PTFA091503EL
Confidential, Limited Internal Distribution
Data Sheet 3 of 11 Rev. 03, 2010-08-11
Typical Performance
0
10
20
30
40
50
60
70
13
14
15
16
17
18
19
20
35 40 45 50 55
Gain (dB)
Output Power (dBm)
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.25 A, ƒ = 960 MHz
Efficiency
Gain
T
CA S E
= 25°C
T
CA S E
= 90°C
-35
-30
-25
-20
-15
-10
-5
0
10
15
20
25
30
35
40
45
50
910 920 930 940 950 960 970
Return Loss (dB)
Efficiency (%), Gain (dB)
Frequency (MHz)
Broadband Performance
V
DD
= 30 V, I
DQ
= 1.25A, P
OUT
= 70 W
Return Loss
Gain
Efficiency
15
16
17
18
19
35 40 45 50 55
Power Gain (dB)
Output Power (dBm)
Power Sweep, CW
V
DD
= 30 V, ƒ = 960 MHz
I
DQ
= 1.25 A
I
DQ
= 1.625 A
I
DQ
= 0.875 A
-80
-70
-60
-50
-40
-30
-20
35 40 45 50 55
IMD (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion vs.
Output Power
V
DD
=30 V, I
DQ
=1.25 A,
ƒ
1
= 960 MHz, ƒ
2
= 959 MHz
5th
7th
3rd Order
Data Sheet 4 of 11 Rev. 03, 2010-08-11
PTFA091503EL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
910 1.08 –1.2 2.88 –1.0
920 1.12 –0.9 2.87 –0.7
930 1.15 –0.8 2.87 –0.6
940 1.16 –0.6 2.88 –0.4
950 1.21 –0.4 2.88 –0.3
960 1.28 –0.3 2.9 –0.1
970 1.33 –0.2 2.9 0.1
0.1
0.3
0.5
0.2
0.4
2
0.1
0.3
0
.5
0.
7
0.2
0.4
0.6
0.1
0.3
0.5
0
.7
0
.9
0
.2
0.4
0
.6
0.
8
1
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
0
.05
0
.35
0
.40
0
.45
0
.0
5
0
.1
0
0
.1
5
0
.4
5
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Nornalized to 50 Ohms
a091503efl-v4/1
ga091503eflV4x1 Apr. 21, 2009 3:59:01 PM
Z Load
910 1.08 -1.1
7
920 1.12 -0.9
4
930 1.15 -0.7
6
940 1.16 -0.6
0
950 1.21 -0.4
3
960 1.28 -0.3
3
970 1.33 -0.1
9
Z Source
970 MHz
910 MHz
Z0 = 50 W
Z Source Z Load
G
S
D
-80
-70
-60
-50
-40
-30
0
10
20
30
40
50
30 35 40 45 50
Drain Efficiency (%)
Output Power (dBm), Avg.
IS-95 CDMA Performance
V
DD
= 30 V, I
DQ
= 1.25A, ƒ = 960 MHz
Adj 750 kHz
Alt
1
1.98 MHz
Efficiency
Adj. Ch. Power Ratio (dBc)
PTFA091503EL
Confidential, Limited Internal Distribution
Data Sheet 5 of 11 Rev. 03, 2010-08-11
Reference Circuit
Reference circuit input schematic for ƒ = 960 MHz
Reference circuit output schematic for ƒ = 960 MHz
TL133
TL134
C102
33 pF
TL135
TL101
TL102
TL103
TL104
TL105
TL106
TL107
TL108
TL109
TL110 TL111
TL112
TL113 TL114
TL115
TL116
TL117
C101
33 pF
1 2
3
TL118
1 2
3
TL119
1 2
3
TL120
1 2
3
TL121
1 2
3
TL122
12
3
TL123
1 2
3
TL124
1 2
3
TL125 TL126
TL127
TL128
TL129
TL130
TL131
TL132
TL136
C804
100000 pF
R804
1200 Ohm
R805
1000 Ohm
C805
100000 pF
C801
100000 pF
C802
100000 pF
R801
1300 Ohm
C803
100000 pF R802
1200 Ohm
C103
5.1 pF
C104
7.5 pF
R803
10 Ohm
R101
10 Ohm
R102
5100 Ohm
C105
4710000 pF
C106
10000 pF
In Out
NC NC
1
2 3
45
6 7
8
S2
S
C
B
E
1
2
3
4
S1
3
S3
C108
4.7 pF
C107
10000 pF
R103
10 Ohm
12
3
TL137
GATE_DUT
Pin A
V
DD
RF_IN
aaaaaaaaaaaaaaaaaaaaaaaaa
TL222
TL223 TL205
C206
33 pF
C208
1.5 pF
C209
1.5 pF
C210
10000000 pF
12
3
TL224
TL228
TL206
TL207
TL208
TL209
TL210
TL211
TL212
TL213
TL215 TL216 TL217
TL218
TL219
1
2
3
4
TL220 TL221
C203
1000000 pF
C201
10000000 pF
C207
10000000 pF
C204
10000000 pF
C205
10000000 pF
C211
10000000 pF
C215
10000000 pF
1
2
3
4
C202
20000 pF
C212
10000000 pF
C213
10000000 pF
1 2
3
TL231
C214
1000000 pF
1
2
3
TL236
TL234
TL229
1 2
3
TL237
1 2
3
TL235
C217
10000000 pF
12
3
TL201
1 2
3
TL204
1
2
3
TL225 1 2
3
TL227
1 2
3
TL226
TL214
TL232
TL233
TL202
1
2
3
4
TL203
C216
20000 pF
DUT
Pin D
DUT
Pin D
DRAIN DUT
Pin C
RF_OUT
aaaaaaaaaaaaaaaaaaaaaaaaaa
VDD
VDD
e
r
=3.48
H=20 mil
RO/RO4350B1
e
r
=3.48
H=20 mil
RO/RO4350B1
Data Sheet 6 of 11 Rev. 03, 2010-08-11
PTFA091503EL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PTFA091503EL
PCB 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 960 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101 0.098 λ, 78.27 W W = 0.762, L = 19.050 W = 30, L = 750
TL101 0.098 λ, 78.27 W W = 0.762, L = 19.050 W = 30, L = 750
TL102 0.004 λ, 51.58 W W = 1.651, L = 0.762 W = 65, L = 30
TL103 0.026 λ, 78.27 W W = 0.762, L = 5.080 W = 30, L = 200
TL104 0.001 λ, 36.29 W W = 2.794, L = 0.254 W = 110, L = 10
TL105 0.039 λ, 8.94 W W = 15.240, L = 6.731 W = 600, L = 265
TL106 0.034 λ, 51.58 W W = 1.651, L = 6.375 W = 65, L = 251
TL107 0.001 λ, 36.29 W W = 2.794, L = 0.254 W = 110, L = 10
TL108 0.007 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50
TL109, TL110, TL111, W = 1.651 W = 65
TL112
TL113, TL114, TL115, W = 0.762 W = 30
TL116, TL117
TL118, TL119 0.014 λ, 36.29 W W1 = 2.794, W2 = 2.794, W3 = 2.540 W1 = 110, W2 = 110, W3 = 100
TL120, TL121 0.011 λ, 36.29 W W1 = 2.794, W2 = 2.794, W3 = 2.032 W1 = 110, W2 = 110, W3 = 80
TL122, TL124 0.016 λ, 36.29 W W1 = 2.794, W2 = 2.794, W3 = 3.048 W1 = 110, W2 = 110, W3 = 120
TL123, TL137 0.015 λ, 8.94 W W1 = 15.240, W2 = 15.240, W3 = 2.540 W1 = 600, W2 = 600, W3 = 100
TL125 0.004 λ, 8.94 W W1 = 15.240, W2 = 15.240, W3 = 0.762 W1 = 600, W2 = 600, W3 = 30
TL126 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500
TL127 W1 = 2.540, W2 = 15.240 W1 = 100, W2 = 600
TL128 0.003 λ, 78.27 W W = 0.762, L = 0.508 W = 30, L = 20
TL129 0.033 λ, 8.94 W W = 15.240, L = 5.715 W = 600, L = 225
TL130, TL132 0.040 λ, 51.58 W W = 1.651, L = 7.620 W = 65, L = 300
TL131 0.038 λ, 38.82 W W = 2.540, L = 7.112 W = 100, L = 280
TL133 0.007 λ, 78.27 W W = 0.762, L = 1.270 W = 30, L = 50
TL134 0.049 λ, 38.82 W W = 2.540, L = 9.144 W = 100, L = 360
TL135 0.015 λ, 78.27 W W = 0.762, L = 2.921 W = 30, L = 115
TL136 0.012 λ, 8.94 W W = 15.240, L = 2.032 W = 600, L = 80
PTFA091503EL
Confidential, Limited Internal Distribution
Data Sheet 7 of 11 Rev. 03, 2010-08-11
Reference Circuit (cont.)
Electrical Characteristics at 960 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201, TL224 0.014 λ, 28.85 W W1 = 3.810, W2 = 3.810, W3 = 2.540 W1 = 150, W2 = 150, W3 = 100
TL202, TL229 0.007 λ, 28.85 W W = 3.810, L = 1.270 W = 150, L = 50
TL203, TL230 W1 = 3.810, W2 = 1.829, W3 = 3.810, W1 = 150, W2 = 72, W3 = 150,
W4 = 1.829 W4 = 72
TL204 0.010 λ, 28.85 W W1 = 3.810, W2 = 3.810, W3 = 1.829 W1 = 150, W2 = 150, W3 = 72
TL205, TL221, TL222, W = 1.651 W = 65
TL223
TL206 (taper) 0.044 λ, 10.17 W / 16.47 W W1 = 13.208, W2 = 7.620, L = 7.620 W1 = 520, W2 = 300, L = 300
TL207 0.004 λ, 51.58 W W = 1.651, L = 0.762 W = 65, L = 30
TL208, TL209 0.058 λ, 51.58 W W = 1.651, L = 10.922 W = 65, L = 430
TL210 0.015 λ, 51.58 W W = 1.651, L = 2.819 W = 65, L = 111
TL211, TL212 0.000 λ, 146.88 W W = 0.025, L = 0.025 W = 1, L = 1
TL213, TL233 0.093 λ, 28.85 W W = 3.810, L = 17.043 W = 150, L = 671
TL214, TL234 W1 = 0.000, W2 = 0.000, Offset = –0.002 W1 = 0, W2 = 6, Offset = –97
TL215 0.117 λ, 10.17 W W = 13.208, L = 20.320 W = 520, L = 800
TL216 0.014 λ, 38.82 W W = 2.540, L = 2.540 W = 100, L = 100
TL217 0.013 λ, 51.58 W W = 1.651, L = 2.540 W = 65, L = 100
TL218 0.012 λ, 10.17 W W = 13.208, L = 2.032 W = 520, L = 80
TL219, TL232 0.014 λ, 23.03 W W = 5.080, L = 2.540 W = 200, L = 100
TL220 W1 = 7.620, W2 = 0.025, W3 = 7.620 W1 = 300, W2 = 1, W3 = 300,
W4 = 0.025 W4 = 1
TL225, TL236 0.019 λ, 126.18 W W1 = 0.152, W2 = 0.152, W3 = 3.810 W1 = 6, W2 = 6, W3 = 150
TL226, TL227, TL231, 0.010 λ, 28.85 W W1 = 3.810, W2 = 3.810, W3 = 1.829 W1 = 150, W2 = 150, W3 = 72
TL235, TL237
TL228 (taper) 0.036 λ, 16.47 W / 38.82 W W1 = 7.620, W2 = 2.540, L = 6.350 W1 = 300, W2 = 100, L = 250
Data Sheet 8 of 11 Rev. 03, 2010-08-11
PTFA091503EL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)*
Circuit Assembly Information
Test Fixture Part No. LTN/PTFA091503E
Find Gerber les for this test xture on the Inneon Web site at http://www.inneon.com/rfpower
PTFA091503 out_02 RO4350, .030 (62)
aaaaaaaaaaaaaaaaaaaaaaaaaaaaaa
+
10 µF
+
10 µF
C201 C204
C205
C203
C211
C207
C208
C216
C209
C206
C202
C215
C213
C212
C214
C217
C210
PTFA091503in_02 RO4350, .030 (62)
C103C104
+
C102
C107
R102
R803
R805 C802
R103
S3
C804
C108
R804
C805 C801
R101
C106
C105
C101
C803
R802
R801
S2 S1
VDD
VDD
VDD
RF_IN RF_OUT
PTFA091503EL
Confidential, Limited Internal Distribution
Data Sheet 9 of 11 Rev. 03, 2010-08-11
Reference Circuit (cont.)
Components Information
Component Description Suggested Manufacturer P/N
Input
C101, C102 Chip capacitor, 33 pF ATC ATC100B330FW500XB
C103 Chip capacitor, 5.1 pF ATC ATC100B5R1BW500XB
C104 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB
C105 Chip capacitor, 4.71 μF Digi-Key PCS3475CT-ND
C106, C107 Chip capacitor, 0.1 μF ATC 200B103MW
C108 Chip capacitor, 4.7 pF ATC ATC100B4R7BW500XB
C801, C802, C803, C804, Chip capacitor, 0.1 μF Digi-Key PCC104BCT-ND
C805
R101, R103, R803 Resistor, 10 W Digi-Key P10ECT-ND
R102 Resistor, 5100 W Digi-Key P5.1KECT-ND
R801 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R802 Resistor, 1200 W Digi-Key P1.2KGCT-ND
R804 Resistor, 1200 W Digi-Key P1.2KECT-ND
R805 Resistor, 1000 W Digi-Key P1.0KECT-ND
S1 Transistor Digi-Key BCP5616TA-ND
S2 Voltage Regulator Digi-Key LM78L05ACM-ND
S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
Output
C201, C204, C205, C210, Capacitor, 10 μF Digi-Key 587-1818-2-ND
C211, C213, C214, C217
C202, C216 Chip capacitor, 20000 pF ATC 200B203MW
C203, C214 Chip capacitor, 1 μF Digi-Key 478-3993-2-ND
C206 Chip capacitor, 33 pF ATC ATC100B330FW500XB
C207, C215 Capacitor, 10 μF Garrett Electronics 281M5002106K
C208, C209 Chip capacitor, 1.5 pF ATC ATC100B1R5BW500XB
Data Sheet 10 of 11 Rev. 03, 2010-08-11
PTFA091503EL
Confidential, Limited Internal Distribution
Package Outline Specications
Package H-33288-6
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: A = gate; B = source; C = drain; D = drain voltage; E, F = N.C.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
+.254
–.12 7
+. 010
–.00 5
]
L
C
C
A
B
C
L19.558±.510
[.770±.020]
27.940
[1.100]
2X 12.700
[.500]
45° X 2.032
[45° X .080] 4X 1.143
[.045] (4 PLS)
9.398
[.370]
9.779
[.385]
34.036
[1.340]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039
[
.159
2X 22.860
[.900]
[.200] (2 PLS)
C
L
4.889±.510
[.192±.020]
4X R1.524
[R.060]
2X R1.626
[R.064]
D
E
D
F
4X 30°
H -33288 -6_ po _02 -18 - 2010
2X 5.080
Data Sheet 11 of 11 Rev. 03, 2010-08-11
Edition 2010-08-11
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2009 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFA091503EL V4
Condential, Limited Internal Distribution
Revision History: 2010-08-11 Data Sheet
Previous Version: 2010-07-26, Data Sheet
Page Subjects (major changes since last revision)
5-9 Updated reference circuit information