BAS20HT1 Preferred Device High Voltage Switching Diode * Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current 625 mAdc Max Unit IFM(surge) 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C 200 mW 1.57 mW/C Thermal Resistance Junction to Ambient 635 C/W -55 to +150 C Junction and Storage Temperature Range 1 2 SOD-323 CASE 477 STYLE 1 *FR-5 Minimum Pad MARKING DIAGRAM JS M JS M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping BAS20HT1 SOD-323 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 0 1 Publication Order Number: BAS20HT1/D BAS20HT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max - - 1.0 100 250 - - - 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr - 50 ns http://onsemi.com 2 mV BAS20HT1 820 +10 V 2.0 k 100 H tp tr 0.1 F IF IF t trr 10% t 0.1 F 90% D.U.T. 50 Input Sampling Oscilloscope 50 Output Pulse Generator iR(REC) = 3.0 mA IR VR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 IR , REVERSE CURRENT ( A) IF , FORWARD CURRENT (mA) 1000 100 55C 10 125C 25C 1.0 150C -40C 0.1 125C 55C 1.0 25C 0.1 0.01 -40C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Current Figure 3. Leakage Current 250 300 3.1 2.0 1.8 V F , FORWARD VOLTAGE (V) C T , TOTAL CAPACITANCE (pF) 150C 10 f = 1 MHz 1.6 IE = 0 A TA = 25C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 3.0 -40C 25C 55C 125C 2.9 2.8 150C 2.7 2.6 2.5 2.4 2.3 2.2 0 5.0 10 15 20 25 30 35 0 25 50 75 100 125 150 175 200 225 250 VR, REVERSE VOLTAGE (V) IF, FORWARD CURRENT (mA) Figure 4. Total Capacitance Figure 5. Forward Voltage http://onsemi.com 3 BAS20HT1 PACKAGE DIMENSIONS SOD-323 CASE 477-02 ISSUE B K A D 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B DIM A B C D E H J K E C J MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches SOD-323 Soldering Footprint Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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