Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0 1Publication Order Number:
BAS20HT1/D
BAS20HT1
Preferred Device
High Voltage
Switching Diode
•Device Marking: JS
MAXIMUM RATINGS
Symbol Rating Value Unit
VRContinuous Reverse Voltage 250 Vdc
IFPeak Forward Current 200 mAdc
IFM(surge) Peak Forward Surge Current 625 mAdc
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
PDTotal Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
200
1.57
mW
mW/°C
RJA Thermal Resistance Junction to Ambient 635 °C/W
TJ, Tstg Junction and Storage
Temperature Range –55 to
+150 °C
*FR–5 Minimum Pad
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HIGH VOLTAGE
SWITCHING DIODE
Device Package Shipping
ORDERING INFORMATION
BAS20HT1 SOD–323 3000/Tape & Reel
SOD–323
CASE 477
STYLE 1
2
1
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE
2
ANODE
JS M
MARKING DIAGRAM
JS = Specific Device Code
M = Date Code
BAS20HT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR–
–1.0
100
µAdc
Reverse Breakdown Voltage
(IBR = 100 µAdc) V(BR) 250 – Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF–
–1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz) CD– 5.0 pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)trr – 50 ns
BAS20HT1
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3
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 Ω
0.1 µF
D.U.T.
VR
100 µH0.1 µF
50 Ω Output
Pulse
Generator
50 Ω Input
Sampling
Oscilloscope
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Current Figure 3. Leakage Current
1000
I
VF, FORWARD VOLTAGE (V)
0.1 0.2 0.4 0.6
100
10
1.0
0.8 1.0 1.2 1.40
100
I
VR, REVERSE VOLTAGE (V)
1.0
0.001 500
10
0.1
100 150 200 250
0.01
300
125°C
150°C –40°C
25°C
55°C
, REVERSE CURRENT ( A)
R
, FORWARD CURRENT (mA)
F
125°C
150°C
–40°C
25°C
55°C
Figure 4. Total Capacitance Figure 5. Forward Voltage
2.0
C
VR, REVERSE VOLTAGE (V)
05.0 10 15
1.8
0.4
0.2
20 25 30 350
3.1
V
IF, FORWARD CURRENT (mA)
2.5
2.2 500
2.6
2.4
100 15025 200
2.3
250
, FORWARD VOLTAGE (V)
F
, TOTAL CAPACITANCE (pF)
T
150°C
–40°C25°C
55°C
0.8
0.6
1.2
1.0
1.6
1.4
75 125 175 225
2.9
3.0
2.8
2.7
125°C
f = 1 MHz
IE = 0 A
TA = 25°C
BAS20HT1
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4
PACKAGE DIMENSIONS
SOD–323
CASE 477–02
ISSUE B
0.63mm
0.025
1.60mm
0.063
2.85mm
0.112
0.83mm
0.033 mm
inches
SOD–323
Soldering Footprint
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.60 1.80 0.063 0.071
B1.15 1.35 0.045 0.053
C0.80 1.00 0.031 0.039
D0.25 0.40 0.010 0.016
E0.15 REF 0.006 REF
H0.00 0.10 0.000 0.004
J0.089 0.177 0.0035 0.0070
K2.30 2.70 0.091 0.106
NOTE 3
A
K
12
DB
E
H
C
J
STYLE 1:
PIN 1. CATHODE
2. ANODE
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BAS20HT1/D
Thermal Clad is a trademark of the Bergquist Company.
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