24 _ Silicon PNP Epitaxial Planar Transistor tr Complement to type 2803865 _ Application Example : @ Outline Drawing 2" MT-100TOSP) Audio and General Purpose Absolute Maximum Ratings (Ta=28'C) Vous 140V Symbo! 2SA1491 Lund " VeBo a v Cee 4V, low Vceo ~140 Vv =A, VEBO ~6 Vv 12V Ic -10 A Is 4 A re 100 Te = 200 ~ Typical Switching Characteristics (Common Emitter) _ BE 3 Veo. Ic Vem | Vese-| Jer lag ton tt Tstg__| 58 to+ 150 c 1] wa] A) Bo ES | ah 80 12 =5 ~10 5 05 | O85 | -O.8typ | OStyp }-O.2typ Common Emitter Characteristics Pc-Ta Derating Ic-Vee Temperature Eharecterisucs (Cypcal) 100 . ~10 - S 80 a = 2 @ 8. 60 2 2 a - Ss 2 8 a # 35 z 2 o x Oo = heim) Vee (W} ~ =a sow 7 Heatsink 95 78 100 125 356 Ambient Temperature Ta (C) . Qo Os ~O8 12 Base-Emitter Voltage Vas (V) Sate Operating Area(SOA) 43 (Single Pulse) Vecetat)~fe Characteristics cypicat Vee (Vv) : m ; 3 3 2 hre-Ic Characteristics (Wee = - 4v) s2 q = 00 H~2 L ay > s 4s 2 = 2 52 3 ! Pi 8 sc i gS E 3 ta Be & +0 Os 23 8 : g ea O02 ~OF ~4 mS 3 Collector Current fo (Ay ~0: 9 08 10 18 =20 Base Current ta (A} 02 | ~038. ~10 ~100 ~ 140 Collector-Emitter Voltage Vee (V) hre-ic Temperature Characteristics (Typical) ee ~ 4) Oja~t Characteristics 300 ogee 30 e = & = a gf 10 @ 100 5 z ze 3 is 6 B 20 & = 82 ~Qt at -190 Eg Collector Gurrent.ie (A) 00 1900 Time t (ms)