A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
ELECTRICAL SPECIFICATIONS TA = 25 OC
TRANS1.SYM
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
IDDS SATURATED DRAIN CURRE NT
VDS = 3.0 V VGS = 0 V 850 1100 1400 mA
VGS (off) GATE TO S O URCE CUT -OF F VOLTAGE
VDS = 3.0 V ID = 1.0 mA -2 -3 -5 V
HIGH POWER GaAs FET
MSC8004
FEATURES INCLUDE:
•High Output Power:
P1dB = 1.6 W (TYP) @ 12 GHz
•High power gain:
GLP = 5 dB (TYP) @ 12 GHz
•High power added efficiency:
Hadd = 18% (TYP) @ 12 GHz
APPLICATIONS:
•S to Ku Band Power Amplifiers
FET PACKAGE TYPE 30
