2SA1150
2003-03-24
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1150
Low Frequency Amplifier Applications
• High hFE: hFE = 100~320
• Complementary to 2SC2710.
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −35 V
Collector-emitter voltage VCEO −30 V
Emitter-base voltage VEBO −5 V
Collector current IC −800 mA
Base current IB −160 mA
Collector power dissipation PC 300 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55~150 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −30 V, IE = 0 −0.1 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 −0.1 µA
Collector-emitter breakdown voltage V (BR) CEO I
C = −10 mA, IB = 0 −30 V
hFE (1)
(Note)
VCE = −1 V, IC = −100 mA 100 320
DC current gain
hFE (2) V
CE = −1 V, IC = −700 mA 35
Collector-emitter saturation voltage VCE (sat) I
C = −500 mA, IB = −20 mA −0.7 V
Base-emitter voltage VBE V
CE = −1 V, IC = −10 mA −0.5 −0.8 V
Transition frequency fT V
CE = −5 V, IC = −10 mA 120 MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz 19 pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-4E1A
Weight: 0.13 g (typ.)
2SA1150
2003-03-24
2
2SA1150
2003-03-24
3
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000707EA
A
RESTRICTIONS ON PRODUCT USE
