Pose me ;SAMSUNG SEMICONDUCTOR BCW60A INC ave o Pp) zauzu2 ooozena 4 NPN. EPITAXIAL SILICON TRANSISTOR . GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C) . - Characteristic Symbol Rating Unit Collector-Base Voltage Vso 32 Vv Collector-Emitter Voltage Veco 32 Vv Emitter-Base Voltage Veso 5 Vv Collector Current ale 100 mA Collector Dissipation Po 350 mW Storage Temperature Tstg 150 C Refer to MMBT3904 for graphs ELECTRICAL CHARACTERISTICS (T.=25C) SOT-23 _T=249- 1. Base 2. Emitter 3. Collector & SAMSUNG SEMICONDUCTOR Characteristic Symboi | Test Condition Min Max Unit Collector-Emitter Breakdown Voltage | BVceo {c=2.0MA, Ip=0 32 v Emitter-Base Breakdown Voltage BVeso le=1.0pA, lc=O0 5 Vv Collector Cutoff Current Ve=S2V, Vee=0 20 nA Emitter Cutoff Current leno Vea=4V, Ic=O 20 nA DC Current Gain Nee Vee=5V, Ic=2.0MA 120 220 Vce=5V, Ic=50mA 60 Collector-Emitter Saturation Voltage | Vce (sat) | le=50mA, la=1.25mA 0.55 Vv . Ic=10mA, 1g=0.25mA / 0.35 Vv Base-Emitter Saturation Voltage Vee (sat) | Ie-=50mA, Ie=1.25mA 0.7 1.05 Vv Ic=50mA, |p=0.25mA 0.6 0.85 Vv Base-Emitter On Voltage Vee (on) | Vce=5V, le=2.0mA - 0.55 0.75 Vv Current-Gain-Banawidth Product fr Ic= LOMA, Vce=5V 125 MHz f=1MHz Output Capacitance Cob Vea=10V, ie=O0 4.6 pF f=1.0MHz Noise Figure NF lg=0,2mA, Vce=5V 6 dB Rs=2KQ, f=1KHz Turn On Time ton | Ig=10mA, lor =1MA 150 ns Turn Off Time toff Vea=3.6V, le2= IMA 800 ns Ri=R,=5KN, RL=9900 Marking Fy AA = 478 A