BCP53-16
LOW POWER PNP TRANSI STOR
■SILICO N EP ITA X IAL PLANA R PNP MEDI UM
VOLTAGE TRANSISTOR
■SOT-223 PLA ST IC PAC KAG E FOR
SURFACE MOUNTING CIRCUITS
■TAPE AND REEL PACKING
■THE NP N COMP LE ME NT ARY T Y PE I S
BCP56-16
APPLICATIONS
■MEDIUM VOLTAGE LOAD SWITCH
TRANSISTORS
■OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
■AUTOMO TIV E PO ST-VOLTAGE
REGULATION
®
INTERNAL SCHEMATIC DIAG RAM
September 2003
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -100 V
VCEO Collector-Emitter Voltage (IB = 0) -80 V
VCER Collector-Emitter Voltage (RBE = 1KΩ)-100 V
VEBO Emitter-Base Voltage (IC = 0) -5 V
ICCollector Current -1 A
ICM Collector Peak Current (tp < 5 ms) -1.5 A
IBBase Current -0.1 A
IBM Base Peak Current (tp < ms) -0.2 A
Ptot Total Dissipation at Tamb = 25 oC 1.6 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
12
2
3
SOT-223
Ordering Code Marking
BCP53-16 BCP5316
1/4
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Max 78 oC/W
• Device mounted on a PCB area of 1 cm 2
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = -30 V
VCB = -30 V Tj = 125 oC-100
-10 nA
µA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -100 µA-100 V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -20 mA -80 V
V(BR)CER Collector-Emitter
Breakdown Voltage
(RBE = 1 KΩ)
IC = -100 µA-100 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10 µA -5 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -500 mA IB = -50 mA -0.5 V
VBE(on)∗Base-Emitter On
Voltage IC = -500 mA VCE = -2 V -1 V
hFE∗DC Current Gain IC = -5 mA VCE = -2 V
IC = -150 mA VCE = -2 V
IC = -500 mA VCE = -2 V
40
100
25 250
fTTransition Frequency IC = -10 m A VCE = -5 V f = 20 MHz 50 MHz
∗ P ulsed: P ulse duration = 300 µs, d ut y cycle ≤ 1.5 %
BCP53-16
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
o
10
o
A1 0.02
P008B
SOT-223 MECHANICAL DATA
BCP53-16
3/4
Information furnished is b elieved to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may resul t fro m its u se. N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification menti oned in this publication are
subject to change without notice. This publication supersedes and replac es all information previously supplied. S TMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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BCP53-16
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