Ka-Band High Power Reflective SPDT PIN Switch
26 - 40 GHz
Rev. V5
MASW-010646
2
2
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DC-0003247
2
Electrical Specifications:
Freq. = 28 - 38 GHz, TA = +25°C, IF2 = +25 mA, VR3 = -15 V, Z0 = 50 Ω
2. Forward bias current (IF) is set using external bias resistors (RBIAS) placed at pins Bias1 and Bias2, where RBIAS = (VCC - 1.32 V) / IF.
3. Reverse bias voltage should be determined based on working conditions. For example, -25 V @ 41.2 dBm input power. For lower power
applications, a less negative voltage can be used. R. Caverly and G. Hiller, ―Establishing the Minimum Reverse Bias for a PIN Diode in a
High Power Switch,‖ IEEE Transactions on Microwave Theory and Techniques, Vol.38, No.12, December 1990.
4. Isolation defined with 1 port in low loss state.
Absolute Maximum Ratings5,6
Parameter Absolute Maximum
Reverse Bias Voltage -50 V
Forward Bias Current 40 mA
CW Incident Power 43 dBm @ 85°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near these
survivability limits.
RFCOMMOM Path Bias 1 Bias 2
RF1 Insertion Loss
RF2 Isolation -15 V 25 mA
RF2 Insertion Loss
RF1 Isolation 25 mA -15 V
Truth Table
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss
(RFCOMMON to RFx ON state)
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB —
0.60
0.60
0.60
0.60
0.70
—
0.90
0.90
0.90
—
Isolation
(RFCOMMON to RFx OFF state)4
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB
—
29
33
35
—
34
35
39
41
42
—
Return Loss
(RFCOMMON)
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB —
16
18
16
16
16
—
Return Loss
(RFx ON state)
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB —
16
18
16
16
16
—
CW Power Handling (ON state)3 -25 V, +85°C dBm — 41.2 —
Switching Speed
TON / TOFF
TRISE / TFALL
50% DC to 90% RF / 50% DC to 10% RF
10% to 90% RF / 90% to 10% RF
ns —
25 / 23
9 / 9
—
Reverse Bias Voltage3 — V -32 -15 -5
Reverse Bias Current3 -15 V nA — 25 —