5200 St. Patrick St., Montreal The Old Railway, Princes Street
Que., H4E 4N9, Canada Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000 Tel: 01 229 581 551
Fax: 514-768-8889 Fax: 01 229 581 554
QF-84
SLD-70C1
Planar Photodiode
Features
• Planar Photodiode
• Low capacitance
• Fast switching time
• Low leakage current
• Linear response vs irradiance
• Multiple dark current ranges available
Description
The Silonex SLD-70C1 planar photodiode is designed
to operate in either photoconductive or photovoltaic
modes. High sensitivity and low dark current allow use
in even low irradiance applications. The photodiode is
supplied on a ceramic base with a clear epoxy dome
package.
Absolute Maximum Ratings
Storage Temperature -20°C to +75°C
Operating Temperature -20°C to +75°C
Soldering Temperature (3) 260°C
Notes: (1) Ee = source @ 2854°K.
(2) Ee = source @ λ = 880 nm
(3) >2 mm from case for < 5 sec.
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
Clear Epoxy Anode
Cathode
Dimensions in mm. (+/- 0.2)
Red dot
25.4 Min
6.3
7.2
3.4
Max
0.50-0.52
5.1
1.0 0.8 0.6 0.4
100°
90°
80°
70°
60°
50°
40° 30° 20° 10°
Half Angle = 60°
Directional Sensitivity Characteristics
20° 40° 60° 80° 100° 120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol Parameter Min Typ Max Units Test Conditions
ISC Short Circuit Current 120 180 µAVR=0V, Ee=25mW/cm2 (1)
VOC Open Circuit Voltage 0.40 VEe=25mw/cm2 (1)
IDReverse Dark Current: SLD-70C1A 100 nA VR=100mV, Ee=0
SLD-70C1B 100 nA VR=5V, Ee=0
SLD-70C1C 10 nA VR=5V, Ee=0
SLD-70C1D 1nA VR=5V, Ee=0
SLD-70C1E 250 pA VR=5V, Ee=0
CJJunction Capacitance 50 pF VR=0, Ee=0, f=1MHz
tRRise Time 1.0 µsVR=5V, RL=1kΩ (2)
tFFall Time 1.5 µsVR=5V, RL=1kΩ (2)
TCITemp. Coef., ISC +0.2 %/°C(1)
VBR Reverse Breakdown Voltage 50 VIR=100µA
λPMaximum Sensitivity Wavelength 930 nm
λRSensitivity Spectral Range 400 1100 nm
θ1/2 Acceptance Half Angle 60 deg (off center-line)
Specifications subject to change without notice. 101421 REV 3
