Data Sheet Switching Diode DA227 Land size figure (Unit : mm) 0.6 (3) 0.150.05 1.250.1 (2) 0.05 2.10.1 Features 1) Small mold type. (UMD4) 2) High reliability. 0.9MIN. 0.7 2.00.2 0.25 0.1 0.05 Each lead has same dimension 1.3 0.1Min 00.1 (4) (1) 0.65 UMD4 0.65 0.7 1.30.1 Construction Silicon epitaxial planar 1.6 Dimensions (Unit : mm) Applications Ultra high speed switching 0.90.1 Structure ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82 dot (year week factory) 1Pin Mark Taping specifications (Unit : mm) 1.550.05 2.00.05 0.30.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage 1.10.1 4.00.1 2.20.1 Limits 2.40.1 8.00.2 00.5 5.50.2 2.450.1 2.40.1 3.50.05 1.750.1 4.00.1 1.150.1 Unit V V mA mA A mW C C 80 80 300 100 4 150 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.A Data Sheet DA227 Ta=150 10000 Ta=75 Ta=-25 1 Ta=75 100 Ta=25 10 Ta=-25 1 0.1 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 80 REVERSE CURRENT:IR(nA) 940 Ta=25 VR=80V n=10pcs 90 930 920 910 AVE:921.7mV 900 80 9 70 60 50 40 AVE:9.655nA 30 20 7 6 5 4 3 1 0 0 Ct DISPERSION MAP IR DISPERSION MAP 1cyc Ifsm 8.3ms 10 5 AVE:3.50A 0 5 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 8 7 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 10 15 6 5 4 3 2 1 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 8 7 6 5 3 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:0.97kV 2 0 0.01 AVE:2.54kV 4 1 300us 1 0.001 100 9 ELECTROSTATIC DISCHARGE TEST ESD(KV) t TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 100 AVE:1.17pF 2 10 VF DISPERSION MAP 20 20 Ta=25 VR=6V f=1MHz n=10pcs 8 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=100mA n=30pcs 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 100 950 1 0.1 0.01 0 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1000 Ta=25 10 Ta=125 f=1MHz Ta=125 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 1000 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A