2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–154 February 24, 2000-19
FEATURES
• High Current Transfer Ratios,
V
CE
=5.0 V
IL/ILD755-1: 750% at
I
F
=2.0 mA
• IL/ILD755-2: 1000% at
I
F
=1.0 mA
BV
CEO
>60 V
• AC or Polarity Insensitive Inputs
• Built-In Reverse Polarity Input Protection
• Industry Standard DIP Package
• Underwriters Lab File #E52744
• VDE #0884 Available with Option 1
DESCRIPTION
The IL/ILD755 are bidirectional input optically cou-
pled isolators. They consist of two Gallium Ars-
enide infrared emitting diodes coupled to a silicon
NPN photodarlington per channel.
The IL755 are single channel Darlington optocou-
plers. The ILD755 has two isolated channels in a
single DIP package.
They are designed for applications requiring
detection or monitoring of AC signals.
Maximum Ratings
Emitter
(Each Channel)
Continuous Forward Current .........................60 mA
Power Dissipation at 25
°
C.......................... 100 mW
Derate Linearly from 25
°
C .................... 1.33 mW/
°
C
Detector
(Each Channel)
Collector-Emitter Breakdown Voltage............... 60 V
Collector-Base Breakdown Voltage ................. 60 V
Power Dissipation at 25
°
C
IL755......................................................... 200 mW
ILD755 ...................................................... 150 mW
Derate Linearly from 25
°
C
ILD755 .................................................. 2.6 mW/
°
C
ILD755 .................................................. 2.0 mW/
°
C
Package
Isolation Test Voltage (PK)
(t=1.0 sec.) ...................... 7500 VAC
PK
/5300 V
RMS
Total Power Dissipation at 25
°
C Ambient
(LED Plus Detector)
IL755......................................................... 250 mW
ILD755 ...................................................... 400 mW
Derate Linearly from 25
°
C
IL7553................................................... 3.0 mW/
°
C
ILD7555 ................................................ 3.0 mW/
°
C
Creepage .................................................
≥
7.0 mm
Clearance.................................................
≥
7.0 mm
Storage Temperature.................... –55
°
C to +150
°
C
Operating Temperature ................–55
°
C to +100
°
C
Lead Soldering Time at 260
°
C .................... 10 sec.
V
DE
Electrical Characteristics
T
A
=25
°
C
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
— 1.2 1.5 V
I
F
=
±
10 mA
Detector
—BV
CEO
60 75 — V
I
C
=1.0 mA
—BV
CBO
60 90 —
I
C
=10
µ
A
—
I
CEO
— 10 100 nA
V
CE
=10 V
Package
—
V
CE
sat
— — 1.0 —
I
F
=
±
10 mA,
I
C
=10 mA
DC Current
Transfer Ratio
IL755/ILD755-1
IL755/ILD755-2
CTR
750
1000
——
%
%
V
CE
=5.0 V
I
F
=
±
2.0 mA,
I
F
=
±
1.0 mA,
Rise Time/Fall Time
IL/ILD755-1
IL/ILD755-2
——
50
70
—
µ
s
µ
s
V
CC
=10 V,
R
L
=100
Ω
,
I
F
=2.0 mA
I
F
=1.0 mA
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
1
2
3
4
1
2
3
6
5
4
Anode/
Cathode
Cathode/
Anode
NC
Base
Collector
Emitter
Dimensions in inches (mm)
Single Channel
Dual Channel
SINGLE CHANNEL
IL755
DUAL CHANNEL
ILD755
Bidirectional Input
Darlington Optocoupler
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD755
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–155 February 24, 2000-19
Figure 1. LED forward current versus forward voltage
Figure 2. Normalized non-saturated and saturated CTR
ce
versus LED current
Figure 3. Normalized non-saturated and saturated
CTR
ce
versus LED current
Figure 4. Normalized non-saturated and saturated
I
ce
versus LED current
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-60
-40
-20
0
20
40
60
25°C
85°C
–55°C
VF - LED Forward Voltage - V
IF - LED Forward Current - mA
100
101.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF - LED Current - mA
NCTRce - Normalized CTRce
Vce = 1
V
Vce = 5 V
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 1 mA
100101.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Vce = 1 V
Vce = 5
V
IF - LED Current - mA
NCTRce - Normalized CTRce
Normalized to:
Ta = 25°C
Vce = 5
V
IF = 2 mA
100101.1
.01
.1
1
10
10
0
Vce = 5 V
Vce = 1 V
IF - LED Current - mA
NIce - Normalized Ice
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 2 mA
Figure 5. Normalized non-saturated and saturated
collector-emitter current versus LED current
Figure 6. Non-saturated and saturated HFE versus
base current
Figure 7. Low to high propagation delay versus
collector load resistance and LED current
Figure 8. High to low propagation delay versus
collector load resistance and LED current
100
101.1
.001
.01
.1
1
1
0
Vce = 1V
Vce = 5
V
IF - LED Current - mA
NIce - Normalized Ice
Ta = 25°C
IF = 10 mA
Vce = 5 V
Normalized to:
.01 .1 1 10 100
0
2000
4000
6000
8000
10000
Vce = 5
V
Vce = 1
V
Ib - Base Current - µA
HFE - Forward Transfer Gain
Ta = 25°C
0 5 10 15 20
0
20
40
60
80 Ta = 25°C, Vcc = 5V
Vth = 1.5 V
220
Ω
470
Ω
1KΩ
IF - LED Current - mA
tpLH - Low/High Propagation
Delay - µs
100
Ω
0 5 10 15 20
0
5
10
15
20
100Ω
1KΩ
IF - LED Current - mA
tpHL - High/Low Propagation
delay - µs
Ta = 25°C
Vcc = 5 V
Vth = 1.5
V
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD755
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–156 February 24, 2000-19
Figure 10. Normalized non-saturated and saturated
CTR
ce
versus LED current
IF=1 mA
V
O
V
CC
=10 V
R
L
F=10 KHz,
DF=50%
Figure 9. Switching waveform
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
