M39–1/2
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector– Emitter Voltage V CEO –100 Vdc
Collector– Emitter Voltage (R BE = 10 kΩ)V
CER –110 Vdc
Collector Current — Continuous I C–100 mAdc
DEVICE MARKING
BSS63LT1
= T1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 5 5 6 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown V oltage V (BR)CEO – 100 — — Vdc
(IC = –100 µA)
Collector–Emitter Breakdown V oltage V (BR)CER – 110 — — Vdc
(IC = –10 µAdc , I E =0, R BE =10 kΩ )
Collector–Base Breakdown V oltage V (BR)CBO – 1 10 — — Vdc
(IE = – 10 µAdc, I E =0 )
Emitter –Base Breakdown Voltage V (BR)CBO – 6.0 — — Vdc
(IE = – 10 µA)
Collector Cutoff Current I CBO — — – 100 µAdc
(VCB = – 90 Vdc, I E =0 )
Collector Cutoff Current I CER — — – 10 µAdc
(VCB = – 110 Vdc, R BE =10 kΩ )
Emitter Cutoff Current I EBO — — – 200 µAdc
(VEB = – 6.0 Vdc, I C = 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
1
3
2
BSS63LT1
CASE 318–08, STYLE 6
SOT– 23 (T O–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
M39–2/2
LESHAN RADIO COMPANY, LTD.
BSS63LT
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain h FE ––
(I C = –10 mAdc, V CE = –1.0 Vdc) 30 –– ––
(I C = –25 mAdc, V CE = –1.0 Vdc) 30 –– ––
Collector–Emitter Saturation V oltage V CE(sat) mVdc
(I C = –25 mAdc, I B = –2.5 mAdc) — — –250
Base–Emitter Saturation V oltage V BE(sat) mVdc
(I C = –25 mAdc, I B = –2.5 mAdc) — — –900
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f TMHz
(I C = –25 mAdc, V CE = –5.0 Vdc, f = 20 MHz) 50 95 —
Case Capacitance C CpF
(I E = I C = 0, V CB = –10 Vdc, f = 1.0 MHz) — — 20
