Preliminary Datasheet BCR1AM-14A R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 700V-1A-Triac Low Power Use Features IT (RMS) : 1 A VDRM :700 V IFGTI : 5 mA IRGTI, IRGTIII : 5 mA or 3mA(IGT item:1) IFGTIII : 10 mA Non-Insulated Type Planar Passivation Type RoHS Compliant Halogen-free package (PRSS0003DJ-A) Completely Pb-free package (PRSS0003DJ-A) Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*) RENESAS Package code: PRSS0003DJ-A (Package name: TO-92) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 3 1 2 1 3 2 Applications Washing machine, electric fan, air purifier, electric pot, rice-cooker, electric blanket, refrigerator, Solid State Relay, and other general purpose AC control applications Maximum Ratings Parameter Voltage class 14 700 840 Symbol Repetitive peak off-state voltageNote1 Non- repetitive peak off-state voltageNote1 Notes: 1. Gate open. VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 1.0 Unit A Surge on-state current ITSM 10 A I2t 0.41 A2 s PGM PG (AV) VGM IGM Tj Tstg -- 1 0.1 6 0.5 - 40 to +125 - 40 to +125 0.23 W W V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 Unit V V Conditions Commercial frequency, sine full wave 360 conduction, , Tc= 56CNote3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Page 1 of 7 BCR1AM-14A Preliminary Electrical Characteristics BCR1AM-14A-1 (IGT item : 1) BCR1AM-14A Unit Test conditions Max. 0.5 mA -- 1.6 V -- -- -- -- -- -- 2.0 2.0 2.0 V V V Tj = 125C VDRM applied Tc = 25C, ITM = 1.5 A instantaneous measurement Tj = 25C, VD = 6 V RL = 6 , RG = 330 2.0 -- -- 2.0 V 5 3 3 -- -- -- -- -- -- 5 5 5 mA mA mA -- 10 -- -- 10 mA 0.1 -- -- 0.1 -- -- -- 1.0 -- -- 50 -- -- 2.0 -- -- 50 -- Parameter Symbol Repetitive peak off-state current IDRM Min. -- Typ. -- Max. 0.5 Min. -- Typ. -- On-state voltage VTM -- -- 1.6 -- I II III VFGT VRGT VRGT -- -- -- -- -- -- 2.0 2.0 2.0 IV VFGT -- -- I II III IFGT IRGT IRGT -- -- -- -- -- -- IV IFGT -- VGD Rth (j-c) (dv/dt)c Gate trigger voltageNote2 Gate trigger curentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltageNote4 Tj = 25C, VD = 6 V RL = 6 , RG = 330 Tj = 125C VD = 1/2 VDRM C/W Junction to caseNote3 V/s Tj = 125C V Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 0.5 A/ms 3. Peak off-state voltage VD = 400 V R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR1AM-14A Preliminary Performance Curves 102 7 Tj = 25C 5 3 2 Rated Surge On-State Current 10 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 4 2 2 3 4 5 7 102 Gate Characteristics Gate Trigger Current vs. Junction Temperature PGM = 1W 100 PG(AV) = 0.1W IGM = 0.5A 10-1 IFGT I IRGT I IRGT III IFGT III 101 VGD = 0.1V 102 103 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Conduction Time (Cycles at 60Hz) VGM = 6V 103 Typical Example IFGT III 102 IRGT I IFGT I, IRGT III 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Gate Current (mA) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Gate Trigger Voltage vs. Junction Temperature 103 Typical Example VRGTI VRGTlll VFGTlll 102 VFGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 Transient Thermal Impedance (C/W) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 2 3 4 5 7 101 On-State Voltage (V) 101 Gate Voltage (V) 6 0 100 10-1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 10-2 100 8 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 Junction to ambient 102 7 5 Junction to case 3 2 101 7 5 3 2 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR1AM-14A Preliminary Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 1.2 0.8 0.4 360 Conduction Resistive, inductive loads 0 0.4 0.8 1.2 1.6 2.0 120 100 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 140 120 100 80 60 40 20 0 Case Temperature (C) 1.6 0 Ambient Temperature (C) Curves apply regardless of conduction angle 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) On-State Power Dissipation (W) 2.0 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Latching Current vs. Junction Temperature 103 102 Typical Example Distribution Latching Current (mA) Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) Holding Current vs. Junction Temperature 102 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 Typical Example T2+, G- 101 100 T2-, G+ T2-, G- T2+, G+ 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Page 4 of 7 BCR1AM-14A Preliminary Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 160 Typical Example Tj = 125C 140 120 I Quadrant 100 80 III Quadrant 60 40 20 0 100 101 102 103 Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width 101 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (C) Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Breakover Voltage vs. Junction Temperature Minimum Value III Quadrant Minimum Value (IGT item:1) 100 I Quadrant Typical Example Tj = 125C IT = 1A = 500s VD = 200V 10-1 -1 10 100 101 Rate of Decay of On-State Commutating Current (A/ms) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Typical Example IFGT I IFGT III IRGT III IRGT I 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 A 6V A 6V 330 V Test Procedure I 330 V Test Procedure II 6 6 A 6V V 330 Test Procedure III R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 A 6V V 330 Test Procedure IV Page 5 of 7 BCR1AM-14A Preliminary Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code T920 MASS[Typ.] 0.23g Unit: mm 5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle 0.7 JEITA Package Code RENESAS Code Previous Code MASS (Typ) [g] SC-43A PRSS0003DJ-A TO-92 0.23 Unit: mm +0.25 14.47 0.4 4.58 0.2 4.58 -0.15 +0.10 0.46 0.1 0.38 -0.05 (3.86 MAX) 1.02 0.1 1.27 R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 Page 6 of 7 BCR1AM-14A Preliminary Ordering Information Orderable Part Number BCR1AM-14A#B00 BCR1AM-14A-1#B00 BCR1AM-14A-A6#B00 BCR1AM-14A-1A6#B00 BCR1AM-14A-TB#B00 BCR1AM-14A-1TB#B00 BCR1AM-14A#BD0 BCR1AM-14A-1#BD0 BCR1AM-14A-A6#BD0 BCR1AM-14A-1A6#BD0 BCR1AM-14A-TB#BD0 BCR1AM-14A-1TB#BD0 Package TO-92* TO-92* TO-92* TO-92* TO-92* TO-92* TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Packing Note Plastic Bag Plastic Bag Plastic Bag Plastic Bag Adhesive Tape Adhesive Tape Plastic Bag Plastic Bag Plastic Bag Plastic Bag Adhesive Tape Adhesive Tape Quantity 500 pcs. 500 pcs. 500 pcs. 500 pcs. 2000 pcs. 2000 pcs. 1000 pcs. 1000 pcs. 1000 pcs. 1000 pcs. 2000 pcs. 2000 pcs. Remark Straight type Straight type, IGT item:1 A6 Lead form A6 Lead form, IGT item:1 A8 Lead form A8 Lead form, IGT item:1 Straight type, Halogen-free Straight type, Halogen-free, IGT item:1 A6 Lead form, Halogen-free A6 Lead form, Halogen-free, IGT item:1 A8 Lead form, Halogen-free A8 Lead form, Halogen-free, IGT item:1 Note : Please confirm the specification about the shipping in detail. R07DS1076EJ0300 Rev.3.00 Aug 25, 2015 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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