SEMICONDUCTOR TECHNICAL DATA 2N3762JAN, JTX, JTXV 2N3763JAN, JTX, JTXV QIN3764JAN, JTX, JTXV, JANS 2N3765JAN, JTX, JTXV Processed per MIL-S-19500/396 PNP Silicon Small-Signal Transistors desagned for general-purpose qawtching appa hors CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y, 11779 CASE To TO-BAD (710-39) | MAXIMUM RATINGS : er a a el Fationg Syribol PATE TNITES Uorwit | Gotlectow Ertan oho Woe 49 0 Vole Collector Bake Vortoge | VoRO a Bo Vee } Emer Baue Verne | VEBO 0 5.4 Vie Calieesor Currant Cortmanus | is 5 15 anc | Cogecne Tao pahon | PT @ty2st 1c os" atts a a? 2a mwac Deraie above 25 [ Operating Junction and Sscrage i Ty Tes "1p 200 c | Termperaiure Range | | a rE oa ae. ae a - : _ ASSURANCE TESTING (PraPost Burn-in) Burr-in Conditions: Ta = 30 +8C, Vog = 0 Vee 2NITH2E4, 40 Vide 2NI7E3,65, 10 Vide JANS Py = 1.0 W 2N3782,63, 0.5 W 2NITS4 6S bnitie! ered Ered Peper Lovett Characteriatice Tested Symi! ier aaa Unie Cotecior Cute Current ieeo ad (og = 20 Vide) 2h TER, INTE - 100 (Vicg = 30 Vide) 2MI7ES, INITES - 100 DC Current Gain!) hee a0 140 - (ie = S00 mAgc, Vigg = 1.0 Voc} Cette trom Pre Burin Mesaured Value Min Mun Tati Goliector Cutt Current Aleem = +100 Mot tian! Wht or sto noe whictinee in greater Cette OC Current Gain! AMEE = 15 of lrvitial VinhELECTRICAL CHARACTERISTICS (1, = 28C unless olherwee noted | (Charecteriatic I Symbol OFF CHARACTERISTICS e762 INIT e763, INITES Cotector-E miter Brmabciowen voitage || (hc * 10 rmAdde, fg = 0) Viemmceo SIT RG. INIT ES SMITE. IMTS Cofactor Base Breakooer Vistage (ie = 10 kee. fig = Gi ViBR)CED Za\/es EruterGase Breakdown Votage [ie = 10 wAde, ke = 0) VeBRVEBO (Cedector Ciutof Curren (Viog @ 20 Vee, Veg = 20 Vdc) Mop = 80 Voc. Veg = 2.0 Vole, Ty = TSC) (Wop 30 Vac Veg = 20 Vac Veg 30 Vide Veg = 20 Vee. Ty TSEC) OMI? G2, 2NOTH NITE). SMITBS ! B)e| #| #| |f (Colecior Cousot Comet Vow = 20 Vac) ONITED. SHT764 Wop = 30 Var) PNa762 2NITES 3 Erutie Cuto Curent (Veg = 20 Vide, ie = oO) ; OW CHARACTERISTICS DE Gurent Gar tle 1OmaAge, Wog = 1.0 Vale) ig = 150 mde, Veg @ 1.0 Veiii ile B00 made. Vig = 16 Mele!" (ig = 10 Ade: Vigg = 18 Wide}! ona ee, 2NITHA PN TED. 2NITBS SMITH? INTTES NITED. INTES fig = 18 Ade, Vigg = 500 Vitej!") ie = S00 made. Wgg 10 Wee, Ta -S8CyT! a Ses 88885 1. a Gollactor-E-nitter Saturation Vottage | fg = 10 mmukde, tg = tae) te = 190 made, ig = 15 erAtic | the = S00 edie, bg = 80 mae) fl 1 Aldi, big = 108) ede VEE (sail till a4 oa 5 o9 Base-Eenitter Sahuraben Voltage! "| fh: = 10 rude, lpg = 1 0 Adc) (le; = 150 dc, ig = 14 made) (ke = 500 rude. ig = SO mAdcd the = #0 Ade ig = 100 made} VEE isa) os 10 12 al SMALL-SIGMAL CHARACTERISTICS Output Capactance (Wop = 10 Vide t= 0.1 i td MR) 18 input Capaciionce (Veg = 05 Veo, fe 84 ie 10 Me) Smae-Signal Current Transie Fabo. Magritude (he = SO nuke. Veg = 10 Vide, f= 100 MHz! 2N3762, DNOTE4 PASTE3, ENOTES z\e ig 18 15 ao ao SWITCHING CHARACTERISTICS [See Figure 17) (Wer: = 30 Vide, ig = 1.0 made, Ig = 100 made? Omiay Time Aise Tiree Storage Time Fall Tima ir |= |< ve Bde Bi cle Ae Le Pi Pe 1