VISHAY
BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 4, 16-Sep-03
Vishay Semiconductors
www.vishay.com
1
17249
Voltage Regulator Diodes
Features
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering:
260 °C/10 sec. at terminals
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic Case
Packaging codes/options:
G1/ 10 K per 13 " reel, (8 mm tape), 50 K/box
G2/ 3 K per 7 " reel, (8 mm tape), 30 K/box
Weight: approx. 10 mg
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
2) TJ = 25 °C prior to surge
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Power dissipation TL = 80 °C Ptot 2.3 W
TA = 25 °C Ptot 0.81) W
Non-repetitive peak pulse power
dissipation
100 µs square pulse2) PZSM 300 W
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)2)
PRSM 150 W
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)2)
PRSM 100 W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air1) Rθ JA 180 K/W
Thermal resistance junction to lead Rθ JL 30 K/W
Maximum junction temperature Tj150 °C
Storage temperature range TS- 55 to + 150 °C
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 0.2 A VF1.2 V
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Document Number 85810
Rev. 4, 16-Sep-03
VISHAY
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Electrical Characteristics
When used as voltage regulator diodes (TJ = 25 °C unless otherwise noted)
1) Pulse test: tp ≤ 5 ms.
Partnumber Marking
Code
Working Voltage1) Differential
Resistance
Temperature
Coefficient
Test
Current
Reverse Current at
Reverse Voltage
VZ @ IZT rdif @ IZαZ @ IZIZT IRVR
VΩ%/°C mA µA V
min max typ max min max max
BZD27C3V6P D0 3.4 3.8 4 8 -0.14 -0.04 100 100 1
BZD27C3V9P D1 3.7 4.1 4 8 -0.14 -0.04 100 50 1
BZD27C4V3P D2 44.6 4 7 -0.12 -0.02 100 25 1
BZD27C4V7P D3 4.4 5 3 7 -0.1 0100 10 1
BZD27C5V1P D4 4.8 5.4 3 6 -0.08 0.02 100 5 1
BZD27C5V6P D5 5.2 6 2 4 -0.04 0.04 100 10 2
BZD27C6V2P D6 5.8 6.6 2 3 -0.01 0.06 100 5 2
BZD27C6V8P D7 6.4 7.2 1300.07 100 10 3
BZD27C7V5P D8 77.9 1200.07 100 50 3
BZD27C8V2P D9 7.7 8.7 1 2 0.03 0.08 100 10 3
BZD27C9V1P E0 8.5 9.6 2 4 0.03 0.08 50 10 5
BZD27C10P E1 9.4 10.6 2 4 0.05 0.09 50 77.5
BZD27C11P E2 10.4 11.6 4 7 0.05 0.1 50 48.2
BZD27C12P E3 11.4 12.7 4 7 0.05 0.1 50 39.1
BZD27C13P E4 12.4 14.1 510 0.05 0.1 50 210
BZD27C15P E5 13.8 15.6 510 0.05 0.1 50 111
BZD27C16P E6 15.3 17.1 615 0.06 0.11 25 112
BZD27C18P E7 16.8 19.1 615 0.06 0.11 25 113
BZD27C20P E8 18.8 21.2 615 0.06 0.11 25 115
BZD27C22P E9 20.8 23.3 615 0.06 0.11 25 116
BZD27C24P F0 22.8 25.6 715 0.06 0.11 25 118
BZD27C27P F1 25.1 28.9 715 0.06 0.11 25 120
BZD27C30P F2 28 32 815 0.06 0.11 25 122
BZD27C33P F3 31 35 815 0.06 0.11 25 124
BZD27C36P F4 34 38 21 40 0.06 0.11 10 127
BZD27C39P F5 37 41 21 40 0.06 0.11 10 130
BZD27C43P F6 40 46 24 45 0.07 0.12 10 133
BZD27C47P F7 44 50 24 45 0.07 0.12 10 136
BZD27C51P F8 48 54 25 60 0.07 0.12 10 139
BZD27C56P F9 52 60 25 60 0.07 0.12 10 143
BZD27C62P G0 58 66 25 80 0.08 0.13 10 147
BZD27C68P G1 64 72 25 80 0.08 0.13 10 151
BZD27C75P G2 70 79 30 100 0.08 0.13 10 156
BZD27C82P G3 77 87 30 100 0.08 0.13 10 162
BZD27C91P G4 85 96 60 200 0.08 0.13 5 1 68
BZD27C100P G5 94 106 60 200 0.09 0.13 5 1 75
BZD27C110P G6 104 116 80 250 0.09 0.13 5 1 82
BZD27C120P G7 114 127 80 250 0.09 0.13 5 1 91
BZD27C130P G8 124 141 110 300 0.09 0.13 5 1 100
BZD27C150P G9 138 156 130 300 0.09 0.13 5 1 110
BZD27C160P H0 153 171 150 350 0.09 0.13 5 1 120
BZD27C180P H1 168 191 180 400 0.09 0.13 5 1 130
BZD27C200P H2 188 212 200 500 0.09 0.13 5 1 150
VISHAY
BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 4, 16-Sep-03
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
When used as protection diodes (TJ = 25 °C unless otherwise noted)
1) Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig. 5.
Partnumber Rev.
Breakdown
Voltage
Test
Current
Temperature Coefficient Clamping Voltage Reverse Current at
Stand-Off Voltage
V(BR)R at
Itest
Itest αZ @ Itest VCat IRSM1) IRat VWM
VmA %/°C V A µA V
min min max max max
BZD27C7V5P 7100 00.07 11.3 13.3 1500 6.2
BZD27C8V2P 7.7 100 0.03 0.08 12.3 12.2 1200 6.8
BZD27C9V1P 8.5 50 0.03 0.08 13.3 11.3 100 7.5
BZD27C10P 9.4 50 0.05 0.09 14.8 10.1 20 8.2
BZD27C11P 10.4 50 0.05 0.1 15.7 9.6 59.1
BZD27C12P 11.4 50 0.05 0.1 17 8.8 510
BZD27C13P 12.4 50 0.05 0.1 18.9 7.9 511
BZD27C15P 13.8 50 0.05 0.1 20.9 7.2 512
BZD27C16P 15.3 25 0.06 0.11 22.9 6.6 513
BZD27C18P 16.8 25 0.06 0.11 25.6 5.9 515
BZD27C20P 18.8 25 0.06 0.11 28.4 5.3 516
BZD27C22P 20.8 25 0.06 0.11 31 4.8 518
BZD27C24P 22.8 25 0.06 0.11 33.8 4.4 520
BZD27C27P 25.1 25 0.06 0.11 38.1 3.9 522
BZD27C30P 28 25 0.06 0.11 42.2 3.6 524
BZD27C33P 31 25 0.06 0.11 46.2 3.2 527
BZD27C36P 34 10 0.06 0.11 50.1 3 5 30
BZD27C39P 37 10 0.06 0.11 54.1 2.8 533
BZD27C43P 40 10 0.07 0.12 60.7 2.5 536
BZD27C47P 44 10 0.07 0.12 65.5 2.3 539
BZD27C51P 48 10 0.07 0.12 70.8 2.1 543
BZD27C56P 52 10 0.07 0.12 78.6 1.9 547
BZD27C62P 58 10 0.08 0.13 86.5 1.7 551
BZD27C68P 64 10 0.08 0.13 94.4 1.6 556
BZD27C75P 70 10 0.08 0.13 103.5 1.5 562
BZD27C82P 77 10 0.08 0.13 114 1.3 568
BZD27C91P 85 50.09 0.13 126 1.2 575
BZD27C100P 94 50.09 0.13 139 1.1 582
BZD27C110P 104 50.09 0.13 139 0.72 591
BZD27C120P 114 50.09 0.13 152 0.65 5100
BZD27C130P 124 50.09 0.13 169 0.59 5110
BZD27C150P 138 50.09 0.13 187 0.53 5120
BZD27C160P 153 50.09 0.13 205 0.48 5130
BZD27C180P 168 50.09 0.13 229 0.43 5150
BZD27C200P 188 50.09 0.13 254 0.39 5160
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Document Number 85810
Rev. 4, 16-Sep-03
VISHAY
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 3. Power Dissipation vs. Ambient Temperature
0.10
1.00
10.00
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
17411
F
I – Forward Current ( A )
V
F
– Forward Voltage ( V )
Typ. V
F
Max. V
F
0.0 0.5 1.0 1.5 2.0 2.5 3.0
17412
C – Typ. Junction Capacitance ( pF )
D
10000
1000
10
100
V
R
– Reverse Voltage (V)
C5V1P C6V8P C12P
C27P C51P
C200P
C18P
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
T
amb
– Ambient Temperature ( qC )
17413
P –Power Dissipation ( W )
tot
ambient temperature
tie point temperature
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150 175 200
V
Znom
– Zener Voltage ( V )
17414
P –Max. Pulse Power Dissipation ( W )
RSM
17415
t
IRSM
100
90
50
10
t1
t2
(%)
t1=10 µs
t2=1000 µs
VISHAY
BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 4, 16-Sep-03
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm
Mounting Pad Layout
T op View
1.0
±
0.2
1.8 0.1
2.8
±
0.1
0.98 0.1 0.05 - 0.30
5
5
Z
Cathode Band
Detail
Z
enlarged
0.00 - 0.10
0.60
±
0.25
3.7
±
0.2
±
17247
±
1.6 1.2
1.2
17248
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Document Number 85810
Rev. 4, 16-Sep-03
VISHAY
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
