MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT4401T NEW PRODUCT Features * * * * Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) Ultra-Small Surface Mount Package A Available in Lead Free/RoHS Compliant Version (Note 2) C TOP VIEW Mechanical Data Case: SOT-523 * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * * E B * * B C G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 H K N M Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 J L D C Terminal Connections: See Diagram Marking (See Page 2): 2X Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 3/4 3/4 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 All Dimensions in mm Ordering & Date Code Information: See Page 2 B Weight: 0.002 grams (approx.) Maximum Ratings E @ TA = 25C unless otherwise specified Characteristic Symbol MMBT4401T Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30272 Rev. 5 - 2 1 of 4 www.diodes.com MMBT4401T a Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 3/4 V IE = 100mA, IC = 0 ICEX 3/4 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL 3/4 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 3/4 3/4 3/4 300 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 3/4 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb 3/4 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb 3/4 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500 3/4 Output Admittance hoe 1.0 30 mS fT 250 3/4 MHz Delay Time td 3/4 15 ns Rise Time tr 3/4 20 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Ordering Information (Note 4) Notes: Device Packaging Shipping MMBT4401T-7 SOT-523 3000/Tape & Reel 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4401T-7-F. Marking Information 2X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2XYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30272 Rev. 5 - 2 2 of 4 www.diodes.com MMBT4401T 1000 250 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) 200 150 100 TA = 125C 100 TA = -25C TA = +25C 10 50 VCE = 1.0V 1 0 0 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Cibo 10 5.0 Cobo 1.0 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 50 10 1000 100 IC = 30mA IC = 1mA IC = 10mA 1.8 1.0 0.1 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 2.0 20 CAPACITANCE (pF) 1 0.1 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve 30 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 0.1 0.01 100 10 1 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 0.5 1.0 IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.1 TA = -50C 0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) NEW PRODUCT (see Note 1) VCE = 5V 0.9 TA = -50C 0.8 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 0.2 10 1 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current DS30272 Rev. 5 - 2 3 of 4 www.diodes.com 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current MMBT4401T fT, GAIN BANDWIDTH PRODUCT (MHz) NEW PRODUCT 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30272 Rev. 5 - 2 4 of 4 www.diodes.com MMBT4401T