2N4401 2N4401 IC = 600 mA hFE ~ 200 Tjmax = 150C General Purpose NPN Transistors General Purpose NPN-Transistoren VCEO = 40 V Ptot = 250 mW Version 2017-12-06 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) 18 9 2 x 2.54 Dimensions - Mae [mm] Pb EL V E BC Besonderheiten Universell anwendbar Konform zu RoHS, REACH, Konfliktmineralien 1) RoHS EE WE 23.5 16 TO-92 (10D3) Typische Anwendungen Signalverarbeitung, Schalten, Verstarken Standardausfuhrung 1) Mechanical Data 1) Mechanische Daten 1) Taped in ammo pack (Raster 2.54) 4000 Weight approx. 0.18 g Gegurtet in Ammo-Pack (Raster 2.54) Gewicht ca. Case material UL 94V-0 Gehausematerial Solder & assembly conditions 260C/10s Lot- und Einbaubedingungen MSL N/A Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 2N4403 Maximum ratings 2) Grenzwerte 2) 2N4401 Collector-Emitter-voltage - Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Ptot 625 mW 3) IC 600 mA Tj TS -55...+150C -55...+150C Power dissipation - Verlustleistung Collector current - Kollektorstrom DC Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics Kennwerte Tj = 25C Min. Typ. Max. hFE 20 40 80 100 40 - - - - - - - - 300 - 4 DC current gain - Kollektor-Basis-Stromverhaltnis ) IC = IC = IC = IC = IC = 1 2 3 4 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 2 V V V V V Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25C, unless otherwise specified - TA = 25C, wenn nicht anders angegeben Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N4401 Characteristics Kennwerte Tj = 25C Min. Typ. Max. VCEsat - - - - 0.40 V 0.75 V VBEsat 0.75 V - - - 0.95 V 1.2 V 1 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCE = 35 V, VEB = 0,4 V ICBV - - 100 nA Emitter-Base cutoff current - Emitter-Basis-Reststrom VCE = 35 V, VEB = 0,4 V IEBV - -- 100 nA fT 250 MHz - - CCBO - - 6.5 pF CEBO - - 30 pf VCC = 30 V, VEB = 2 V IC = 150 mA, IB1 = 15 mA td - - 15 ns tr - - 20 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA ts - - 225 ns tf - - 30 ns Gain-Bandwidth Product - Transitfrequenz IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient Warmewiderstand Sperrschicht - Umgebung RthA < 200 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG