BAS16VGS08 - VISHAY - Datasheet.Directory

BAS16-V

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Rev. 1.6, 29-Jan-13 1Document Number: 85539

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Fast Switching Diode

MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.8 mg

Polarity: cathode band

Packaging codes/options:

GS18/10K per 13” reel (8 mm tape), 10K/box

GS08/3K per 7” reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diode

• Ultra fast switching speed

• Surface mount package ideally suited for

automatic insertion

• High conductance

• AEC-Q101 qualified

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

PARTS TABLE

PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS

BAS16-V BAS16-V-GS18 or BAS16-V-GS08 A6 Single diode Tape and reel

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Non repetitive peak reverse voltage VRM 100 V

Repetitive peak reverse voltage

= Working peak reverse voltage

= DC Blocking voltage

VRRM = VRWM = VR75 V

Peak forward surge current tp = 1 s IFSM 1A

tp = 1 μs IFSM 2A

Average forward current

Half wave rectification with

resistive load and f  50 MHz,

on ceramic substrate

8 mm x 10 mm x 0.7 mm

IF(AV) 150 mA

Forward current On ceramic substrate

8 mm x 10 mm x 0.7 mm IF300 mA

Power dissipation On ceramic substrate

8 mm x 10 mm x 0.7 mm Ptot 350 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Junction ambient On ceramic substrate

8 mm x 10 mm x 0.7 mm RthJA 357 K/W

Junction and storage temperature range Tj = Tstg - 55 to + 150 °C

BAS16-V

www.vishay.com Vishay Semiconductors

Rev. 1.6, 29-Jan-13 2Document Number: 85539

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Junction Temperature

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage

IF = 1 mA VF715 mV

IF = 10 mA VF855 mV

IF = 50 mA VF1V

IF = 150 mA VF1.25 V

Reverse current

VR = 75 V IR1μA

VR = 75 V, Tj = 150 °C IR50 μA

VR = 25 V, Tj = 150 °C IR30 μA

Diode capacitance VR = 0, f = 1 MHz CD4pF

Reverse recovery time IF = 10 mA to iR = 1 mA,

VR = 6 V, RL = 100 trr 6ns

I - Forward Current (mA)

0.01

0.1

100

1000

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF-Forward Voltage (V)

14356

= 100 °C

25 °C

I–Reverse Current (nA)

100

1000

10000

0 25 50 75 100 125 150 175 200

Tj–Junction Temperature (°C)14357

VR=20V

BAS16-V

www.vishay.com Vishay Semiconductors

Rev. 1.6, 29-Jan-13 3Document Number: 85539

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches): SOT-23

Foot print recommendation:

Rev. 8 - Date: 23.Sept.2009

17418

Document no.: 6.541-5014.01-4

0.9 (0.035)

1 (0.039)

0.9 (0.035)

1 (0.039)

1.43 (0.056)

0.45 (0.018)

0.35 (0.014)

2.8 (0.110)

3.1 (0.122)

0.45 (0.018)

0.35 (0.014)

0.45 (0.018)

0.35 (0.014)

0.1 (0.004) max.

2.35 (0.093)

2.6 (0.102)

0.175 (0.007)

0.098 (0.004)

1.15 (0.045)

0.9 (0.035)

1.20 (0.047)

0.95 (0.037) 0.95 (0.037)

2 (0.079)

0.7 (0.028)

0.9 (0.035)

0° to 8°

0.2 (0.008)

0.3 (0.012)

0.5 (0.020)

0.550 ref. (0.022 ref.)

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Revision: 02-Oct-12 1Document Number: 91000

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