ACEPACK™ 1
Features
• ACEPACK™ 1 power module
– DBC Cu Al2O3 Cu
• Sixpack topology
– 1200 V, 35 A IGBTs and diodes
– Soft and fast recovery diode
• Integrated NTC
Applications
• Inverters
• Industrial
• Motor drives
Description
This power module is a sixpack topology in an ACEPACK™ 1 package with NTC,
integrating the advanced trench gate field-stop technologies from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.
Product status
A1P35S12M3
Product summary
Order code A1P35S12M3
Marking A1P35S12M3
Package ACEPACK™ 1
Leads type Solder contact pins
ACEPACK™ 1 sixpack topology, 1200 V, 35 A,
trench gate field‑stop M series IGBT with soft diode and NTC
A1P35S12M3
Datasheet
DS11635 - Rev 5 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
1.1 IGBT
Limiting values at TJ = 25 °C, unless otherwise specified.
Table 1. Absolute maximum ratings of the IGBT
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 1200 V
ICContinuous collector current (TC = 100 °C) 35 A
ICP(1) Pulsed collector current (tp = 1 ms) 70 A
VGE Gate-emitter voltage ±20 V
PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 250 W
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature.
Table 2. Electrical characteristics of the IGBT
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES Collector-emitter breakdown
voltage IC = 1 mA, VGE = 0 V 1200 V
VCE(sat)
(terminal)
Collector-emitter saturation
voltage
VGE = 15 V, IC= 35 A 1.95 2.45
V
VGE = 15 V, IC = 35 A,
TJ = 150 ˚C 2.3
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ± 500 nA
Cies Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
2154 pF
Coes Output capacitance 164 pF
Cres Reverse transfer capacitance 86 pF
QgTotal gate charge
VCC = 960 V, IC = 35 A,
VGE = ±15 V 163 nC
td(on) Turn-on delay time VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1900 A/µs
122 ns
trCurrent rise time 17 ns
Eon(1) Turn-on switching energy 1.21 mJ
td(off) Turn-off delay time VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 7800 V/µs
142 ns
tfCurrent fall time 150 ns
Eoff(2) Turn-off switching energy 2.19 mJ
A1P35S12M3
Electrical ratings
DS11635 - Rev 5 page 2/15
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1533 A/µs,
TJ = 150 °C
124 ns
trCurrent rise time 18 ns
Eon(1) Turn-on switching energy 1.8 mJ
td(off) Turn-off delay time VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 6700 V/µs,
TJ = 150 °C
142 ns
tfCurrent fall time 256 ns
Eoff(2) Turn-off switching energy 3.1 mJ
tSC Short-circuit withstand time
VCC ≤ 600 V, VGE ≤ 15 V,
TJstart ≤ 150 °C 10 µs
RTHj-c Thermal resistance junction-
to-case Each IGBT 0.55 0.60 °C/W
RTHc-h Thermal resistance case-to-
heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.70 °C/W
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
1.2 Diode
Limiting values at TJ = 25 °C, unless otherwise specified.
Table 3. Absolute maximum ratings of the diode
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1200 V
IFContinuous forward current at TC = 100 °C 35 A
IFP(1) Pulsed forward current (tp = 1 ms) 70 A
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature.
Table 4. Electrical characteristics of the diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VF
(terminal)
Forward voltage
IF = 35 A - 2.95 4.1
V
IF = 35 A, TJ = 150 ˚C - 2.3
trr Reverse recovery time
IF = 35 A, VR = 600 V,
VGE = ±15 V, di/dt = 1900 A/μs
- 140 ns
Qrr Reverse recovery charge - 2.62 µC
Irrm Reverse recovery current - 54 A
Erec Reverse recovery energy - 1.2 mJ
A1P35S12M3
Diode
DS11635 - Rev 5 page 3/15
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 35 A, VR = 600 V,
VGE = ±15 V, di/dt = 1533 A/μs,
TJ = 150 °C
- 350 ns
Qrr Reverse recovery charge - 6.6 µC
Irrm Reverse recovery current - 63 A
Erec Reverse recovery energy - 3.2 mJ
RTHj-c Thermal resistance junction-
to-case Each diode - 0.8 0.9 °C/W
RTHc-h Thermal resistance case-to-
heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 °C/W
1.3 NTC
Table 5. NTC temperature sensor, considered as stand-alone
Symbol Parameter Test conditions Min. Typ. Max. Unit
R25 Resistance T = 25°C 5 kΩ
R100 Resistance T = 100°C 493 Ω
ΔR/R Deviation of R100 -5 +5 %
B25/50 B-constant 3375 K
B25/80 B-constant 3411 K
T Operating temperature range -40 150 °C
Figure 1. NTC resistance vs temperature
GADG260720171142NTC
10 4
10 3
10 2
0 25 50 75 100 125
R
(Ω)
TC (°C)
Figure 2. NTC resistance vs temperature, zoom
GADG260720171151NTCZ
800
700
600
500
400
300
85 90 95 100 105 110
R
(Ω)
TC (°C)
max
min
typ
A1P35S12M3
NTC
DS11635 - Rev 5 page 4/15
1.4 Package
Table 6. ACEPACK™ 1 package
Symbol Parameter Min. Typ. Max. Unit
Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms
Tstg Storage temperature -40 125 °C
CTI Comparative tracking index 200
LsStray inductance module P1 - EW loop 28.7 nH
RsModule single lead resistance, terminal-to-chip 3.9 mΩ
A1P35S12M3
Package
DS11635 - Rev 5 page 5/15
2Electrical characteristics (curves)
Figure 3. IGBT output characteristics (VGE = 15V, terminal)
IGBT230820171146OC25
60
50
40
30
20
10
00 1 2 3 4 5
IC
(A)
VCE (V)
TJ = 25 °C
TJ = 150 °C
Figure 4. IGBT output characteristics
(TJ = 150 °C, terminal)
IGBT230820171148OC175
60
50
40
30
20
10
00 1 2 3 4 5
IC
(A)
VCE (V)
9 V
17 V
19 V
15 V
13 V
11 V
Figure 5. IGBT transfer characteristics
(VCE = 15 V, terminal)
IGBT230820171148TCH
60
50
40
30
20
10
05 6 7 8 9 10 11
IC
(A)
VGE (V)
TJ = 25 °C
TJ = 150 °C
Figure 6. IGBT collector current vs case temperature
IGBT061120180836CCT
70
60
50
40
30
20
10
00 25 50 75 100 125 150
IC
(A)
TC (°C)
VCC = 15 V, TJ ≤ 175 °C
A1P35S12M3
Electrical characteristics (curves)
DS11635 - Rev 5 page 6/15
Figure 7. Switching energy vs gate resistance
IGBT230820171149SLG
7
6
5
4
3
2
1
00 20 40 60 80
E
(mJ)
RG (Ω)
VCC = 600 V, VGE = ± 15 V, IC = 35 A
EON (TJ = 150 °C)
EON (TJ = 25 °C)
EOFF (TJ = 150 °C)
EOFF (TJ = 25 °C)
Figure 8. Switching energy vs collector current
IGBT230820171150SLC
5
4
3
2
1
05 15 25 35 45 55 65
E
(mJ)
IC (A)
VCC = 600 V, VGE = ± 15 V, RG = 10 Ω
EON (TJ = 150 °C)
EON (TJ = 25 °C)
EOFF (TJ = 150 °C)
EOFF (TJ = 25 °C)
Figure 9. IGBT reverse biased safe operating area
(RBSOA)
IGBT230820171151FSOA
70
60
50
40
30
20
10
00 200 400 600 800 1000 1200
IC
(A)
VCE (V)
TJ = 125 °C, VGE = ±15 V, RG = 10 Ω
Figure 10. Diode forward characteristics (terminal)
IGBT230820171154DVF
60
50
40
30
20
10
001234
IF (A)
VF (V)
TJ = 25 °C
TJ = 150 °C
Figure 11. Diode reverse recovery energy vs diode current
slope
IGBT230820171431RRE
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
400 800 1200 1600
Erec
(mJ)
di/dt (A/µs)
VCE = 600 V, IF = 35 A, VGE = ±15 V
TJ = 25 °C
TJ = 150 °C
Figure 12. Diode reverse recovery energy vs forward
current
IGBT230820171157RRE
4.2
3.6
3.0
2.4
1.8
1.2
0.65 15 25 35 45 55 65
Erec
(mJ)
IF (A)
TJ = 150 °C
TJ = 25 °C
VCE = 600 V, RG = 10 Ω, VGE = ±15 V
A1P35S12M3
Electrical characteristics (curves)
DS11635 - Rev 5 page 7/15
Figure 13. Diode reverse recovery energy vs gate
resistance
IGBT230820171158RRE
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.40 20 40 60 80
Erec
(mJ)
RG (Ω)
TJ = 150 °C
TJ = 25 °C
VCE = 600 V, IF = 35 A, VGE = ±15 V
Figure 14. Inverter diode thermal impedance
IGBT230820171500MT
10 0
10 -1
10 -3 10 -2 10 -1 10 0
Zth(°C/W)
t (s)
Zth (typ.) JH
Zth (max.) JC
JC
i1 2 3 4
ri (˚C/W) 0.1372 0.4030 0.2525 0.1034
τi(s)
JH
i
ri (˚C/W) 0.1497 0.4233 0.7016 0.2714
τi(s) 0.0919 0.4067
0.0009 0.0090
0.0513 0.3253
0.0011
0.0154
1 2 3 4
RC - Foster thermal network
RC - Foster thermal network
Figure 15. IGBT thermal impedance
IGBT230820171153MT
10 0
10 -1
10 -3 10 -2 10 -1 10 0
Zth(°C/W)
t (s)
Zth (typ.) JH
Zth (max.) JC
JC
i1234
ri (˚C/W) 0.0619 0.3073 0.1502 0.0784
τi(s) 0.3556
JH
i
ri (˚C/W) 0.0604 0.3088 0.5759 0.3016
τi(s) 0.0005 0.0152 0.0939 0.3964
0.0005 0.0103 0.0613
1 2 3 4
RC - Foster thermal network
RC - Foster thermal network
A1P35S12M3
Electrical characteristics (curves)
DS11635 - Rev 5 page 8/15
3Test circuits
Figure 16. Test circuit for inductive load switching
A A
C
E
G
B
R
G
+
-
G
C3.3
µF 1000
µF
L=100 µH
V
CC
E
D.U.T
B
AM01504v1
Figure 17. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 18. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
Figure 19. Diode reverse recovery waveform
25
A1P35S12M3
Test circuits
DS11635 - Rev 5 page 9/15
4Topology and pin description
Figure 20. Electrical topology and pin description
P
G1 G3 G5
G2 G4 G6
U
V
W
EW
E’W
EV
E’V
EU
E’U
T1
T2
Figure 21. Package top view with sixpack pinout
A1P35S12M3
Topology and pin description
DS11635 - Rev 5 page 10/15
5Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
A1P35S12M3
Package information
DS11635 - Rev 5 page 11/15
5.1 ACEPACK™ 1 sixpack solder pins package information
Figure 22. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm)
33.8±0.3
28.1±0.2
19.4±0.2
16.4±0.2
62.8±0.5
53±0.1
42.5±0.2
41±0.2
48±0.3
4.5±0.1
3.2 BSC
12±0.35
15.5±0.50
36.8 REF
1.3±0.2
2.5±0.2
3.2 BSC
Detail A
Section B-B
2.3 REF
8.5
3.5 REF x45°
B
B
A
A
3.20
6.40
0.00
12.80
16.00
22.40
25.60
28.80
32.00
0.00
6.40
16.00
19.20
25.60
G6
P
W
V
W
G5
T1
T2
G3
U
U
G1
E'W EW G4 EV E'V EU E'U
G2
P
V
3.20
9.60
22.40
□0.64±0.03
GADG240820170900MT_8569715_4
• The lead size includes the thickness of the lead plating material.
• Dimensions do not include mold protrusion.
• Package dimensions do not include any eventual metal burrs.
A1P35S12M3
ACEPACK™ 1 sixpack solder pins package information
DS11635 - Rev 5 page 12/15
Revision history
Table 7. Document revision history
Date Revision Changes
02-May-2016 1 Initial release.
24-Aug-2017 2
Updated title, features, description and Table 1: "Device summary" in cover page.
Updated Section 1: "Electrical ratings". Added Section 2: "Electrical characteristics
curves", Section 3: "Test circuits", Section 4: "Topology and pin description" and
Section 5: "Package information".
Minor text changes.
02-Oct-2017 3
Document status promoted from preliminary data to production data.
Updated Table 7: "ACEPACK™ 1 package" and Section 2: "Electrical
characteristics curves".
Minor text changes.
16-Feb-2018 4
Updated features and removed maturity status indication from cover page.
Updated Figure 13. Inverter diode thermal impedance and Figure 14. IGBT thermal
impedance.
Updated Figure 21. ACEPACK™ 1 sixpack solder pins package outline
(dimensions are in mm).
Minor text changes
14-Nov-2018 5 Added Figure 6. IGBT collector current vs case temperature.
Minor text changes
A1P35S12M3
DS11635 - Rev 5 page 13/15
Contents
1Electrical ratings ..................................................................2
1.1 IGBT .........................................................................2
1.2 Diode ........................................................................3
1.3 NTC..........................................................................4
1.4 Package ......................................................................5
2Electrical characteristics (curves)..................................................6
3Test circuits .......................................................................9
4Topology and pin description .....................................................10
5Package information..............................................................11
5.1 ACEPACK™ 1 sixpack solder pins package information .............................12
Revision history .......................................................................13
A1P35S12M3
Contents
DS11635 - Rev 5 page 14/15
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A1P35S12M3
DS11635 - Rev 5 page 15/15
